Influence of growth temperature and post-annealing on an n-ZnO/p-GaN heterojunction diode

We report on an n-ZnO/p-GaN heterojunction diode fabricated from zinc oxide (ZnO) films at various growth temperatures (450, 500, 550, and 600 °C) by RF sputtering. The films were subsequently annealed at 700 °C in N₂ ambient. To investigate the influence of the growth temperature of n-ZnO films, the microstructural, optical, and electrical properties were measured using scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), and Hall measurements. The XRD pattern showed the preferred orientation along the c-axis (002) regardless of growth temperature. The PL spectra showed a dominant sharp near-band-edge (NBE) emission. Current–voltage (I–V) curves showed excellent rectification behavior. The turn-on voltage of the diode was observed to be 3.2 V for the films produced at 500 °C. The ideality factor of ZnO film was observed to be 1.37, which showed the best performance of the diode.     

Determination of Solvent Systems for Blade Coating Thin Film Photovoltaics

With lab‐scale solution‐processed thin film photovoltaic (TFPV) devices attaining market relevant efficiencies, the demand for environmentally friendly and scalable deposition techniques is increasing. Replacing toxic halogenated solvents is a priority for the industrialization of solution‐processed TFPV. In this work, a generalized five‐step process is presented for fabricating high‐performance devices from nonhalogenated inks. Resulting from this process, several new solvent systems are introduced based on thiophene, tetralin, 1,2,4‐trimethylbenzene, o‐xylene, and anisole for blade coating of three different diketopyrrolopyrrole‐based (pDPP5T‐2, pPDPP5T‐2S, and P390) bulk heterojunctions applied in organic photovoltaic devices. Devices based on pDPP5T‐2S and P390 attain 5.6% and 6.1% efficiency, respectively, greater than the efficiency either material reached when processed from the halogenated solvent system commonly used. These processes are implemented without post‐deposition annealing treatments or additives. The Hansen solubility parameters of the pDPP5T‐2 material are obtained, and are used, along with wettability data on a variety of substrates, to determine optimum solvent combinations and ratios for deposition. This generalized five‐step process results in new nonhalogenated solvent pathways for the scalable deposition of thin film photovoltaic materials.     

退火温度对TiO2/CdSe纳米片异质结薄膜光电性能的影响

采用水热法在FTO上制备（001）高活性晶面主导的TiO₂纳米片薄膜,利用循环伏安法在TiO₂纳米片薄膜上沉积CdSe颗粒,制备了TiO₂/CdSe纳米片异质结薄膜。分别在150、250、350、450 ℃,氩气保护气氛中对样品进行退火。利用X射线衍射仪（XRD）、场发射扫描电镜（FESEM）、X射线光电子能谱分析仪（XPS）、紫外-可见（UV-Vis）分光光度计以及电化学工作站对不同温度退火后的TiO₂/CdSe纳米片异质结薄膜的微观形貌、晶体结构、光电化学性能进行表征和测试。结果表明：六方相CdSe纳米颗粒均匀包覆在TiO₂纳米片表面,直径30 nm左右;随着退火温度的升高CdSe纳米颗粒长大,形成光滑的CdSe薄膜,且晶化程度提高;TiO₂纳米片表面的Se元素与Cd元素发生氧化;TiO₂/CdSe纳米片异质结薄膜对可见光的吸收光谱发生红移,禁带宽度逐渐减小。光电化学性能测试表明随着退火温度的升高,TiO₂/CdSe纳米片异质结薄膜的光电流密度显著提高,开路电压减小,但由于SeO2和CdO的出现,导致填充因子减小,影响光电转换效率的提高。在本实验条件下,TiO₂/CdSe纳米片异质结薄膜的最佳退火温度为150 ℃,填充因子为0.77,光电转换效率达到3.12%。     

Bi2Fe4O9/g-C3N4/UiO-66三元复合材料的协同光催化作用

通过水热法合成具有协同机制的三元复合材料Bi₂Fe₄O₉/g-C₃N₄/UiO-66,研究表明三元复合光催化剂的催化活性要高于二元材料和纯材料。这主要是由于Bi₂Fe₄O₉更易于和g-C₃N₄结合形成稳定的Z-scheme异质结结构,使三元复合材料增强了可见光响应能力,提高了电子-空穴分离能力,增强了空穴和电子的氧化还原能力。     

Multidimensional gas chromatography for the characterization of permanent gases and light hydrocarbons in catalytic cracking process

An integrated gas chromatographic system has been successfully developed and implemented for the measurement of oxygen, nitrogen, carbon monoxide, carbon dioxide and light hydrocarbons in one single analysis. These analytes are frequently encountered in critical industrial petrochemical and chemical processes like catalytic cracking of naphtha or diesel fuel to lighter components used in gasoline. The system employs a practical, effective configuration consisting of two three-port planar microfluidic devices in series with each other, having built-in fluidic gates, and a mid-point pressure source. The use of planar microfluidic devices offers intangible advantages like in-oven switching with no mechanical moving parts, an inert sample flow path, and a leak-free operation even with multiple thermal cycles. In this way, necessary features such as selectivity enhancement, column isolation, column back-flushing, and improved system cleanliness were realized. Porous layer open tubular capillary columns were employed for the separation of hydrocarbons followed by flame ionization detection. After separation has occurred, carbon monoxide and carbon dioxide were converted to methane with the use of a nickel-based methanizer for detection with flame ionization. Flow modulated thermal conductivity detection was employed to measure oxygen and nitrogen. Separation of all the target analytes was achieved in one single analysis of less than 12 min. Reproducibility of retention times for all compounds were found to be less than 0.1% (n = 20). Reproducibility of area counts at two levels, namely 100 ppm_v and 1000 ppm_v over a period of two days were found to be less than 5.5% (n = 20). Oxygen and nitrogen were found to be linear over a range from 20 ppm_v to 10,000 ppm_v with correlation coefficients of at least 0.998 and detection limits of less than 10 ppm_v. Hydrocarbons of interest were found to be linear over a range from 200 ppb_v to 1000 ppm_v with correlation coefficients of greater than 0.999 and detection limits of less than 100 ppb_v.     

The band alignment at CdS/Cu2ZnSnSe4 heterojunction interface

Band alignment at CdS/Cu₂ZnSnSe₄ heterojunction interface is studied by X‐ray photoemission spectroscopy. The Cu₂ZnSnSe₄ thin films are prepared by selenization of electrodeposited Cu‐Zn‐Sn precursors. CdS overlayers with different thickness are sequentially grown on the Cu₂ZnSnSe₄ substrate by pulsed laser deposition process. Photoemission spectra are obtained before and after each growth to study the conduction and valence band offsets at the heterojunction interface. The determined conduction band offset of 0.34 eV indicates a spike‐like ‘type I’ band alignment at CdS/Cu₂ZnSnSe₄ interface. The spike will avoid interface recombination, and it is low enough that electron could transfer from the Cu₂ZnSnSe₄ layer to the buffer layer which is suitable for solar cell's fabrication. Copyright © 2012 John Wiley & Sons, Ltd.     

Solution-processed bilayer photovoltaic devices with nematic liquid crystals

The cross-linking of polymerisable liquid crystalline semiconductors is a promising approach to solution-processable, multilayer, organic photovoltaics. Here we demonstrate an organic bilayer photovoltaic with an insoluble electron-donating layer formed by cross-linking a nematic reactive mesogen. We investigate a range of perylene diimide (PDI) materials, some of which are liquid crystalline, as the overlying electron acceptor layer. We find that carrier mobility of the acceptor materials is enhanced by liquid crystallinity and that mobility limits the performance of photovoltaic devices.     

卤氧化铋复合物光催化剂

利用半导体光催化降解有机污染物与分解水制氢对于解决能源短缺与环境污染这一世界性难题具有重要意义,引起了人们的重视.传统的光催化剂TiO2存在可见光利用率低与光生载流子的复合率高等问题[1-3],因此寻找新型高效光催化剂的工作迫     

Universal point sets for planar three-trees

For every $n\in \mathbb{N}$, we present a set $S_n$ of $O(n^{3/2}\log n)$ points in the plane such that every planar 3-tree with n vertices has a straight-line embedding in the plane in which the vertices are mapped to a subset of $S_n$. This is the first subquadratic upper bound on the cardinality of universal point sets for planar 3-trees, as well as for the class of 2-trees and serial parallel graphs.