飞机电子设备电磁兼容性分析

本文分析了现代民航机载电子设备的电磁环境及引起电磁干扰的原因,并从飞机总体结构和可靠性设计两方面分析了飞机生产商和维护部门在飞机电子设备电磁兼容方面所采取的各种措施.     

Raman spectra and structure of multicomponent oxide planar waveguides prepared by sol-gel

This work was aimed at understanding the structure of SiO₂–MO₂ (M = Ti, Zr, Hf) and SiO₂–HfO₂–MO₂ (M = Ti, Zr) materials, used as mixed oxide glass hosts for Er³⁺ ions in the fabrication of optical planar waveguides by sol-gel processing. This structural study was performed by Waveguide Raman Spectroscopy (WRS), complemented with X-ray diffraction (XRD). The admixture of TiO₂ to HfO₂, SiO₂–HfO₂ and HfO₂–ZrO₂ compositions was found to cause precipitation of nanocrystals of tetragonal HfO₂ or ZrO₂, or the formation of hafnia-titania mixed crystals, depending on the HfO₂/TiO₂ molar ratio.     

Optimal Planar Interception with Fixed End Conditions: Approximate Solutions

In a previous paper (Ref. 1), an exact solution of the optimal planar interception with fixed end conditions was derived in closed form. The optimal control was expressed as an explicit function of the state variables and two fixed parameters, obtained by solving a set of nonlinear algebraic equations involving elliptic integrals. In order to facilitate the optimal control implementation, the present paper derives a highly accurate simplified solution assuming that the ratio of the pursuer turning radius to the initial range is small. An asymptotic expansion further reduces the computational workload. Construction of a near-optimal open-loop control, based on the approximations, completes the present paper.     

梁式引线肖特基混频管几何参数优化设计

利用CAD技术找出平面结构梁式引线混频管几何图形最佳尺寸,满足在特定条件下管子总电容和总电阴为最小,以提高截止频率改善器件性能.研制出的混频管在35GHz时双边带噪声系数为4.8dB,接近预期结果.     

平面分层介质结构全波分析综述

本文综述了广义谱域导抗法，直线法及直线法的快速算法，全波离散镜象法等主要方法，并对各种方法的特点进行了比较，这些方法可有效地处理平面分层介质结构问题，文中包括作者近期的研究成果。     

Sn和Pb单掺杂Al4小团簇的理论研究

在CCSD(T)/aug-cc-pVTZ&;CEP-121G//B3LYP/6-311+G(d)&;LANL2DZ水平上, 研究了由更高周期的Sn和Pb单掺杂Al4团簇形成的五原子含铝体系XAl4(X=Sn, Pb), 确定了体系的低能异构体, 分析了关键异构体的结构和稳定性. 研究结果表明, 与SiAl4及GeAl4的基态平面四配位Si/Ge结构所不同, 等价电子的SnAl4和PbAl4体系的基态结构不是平面四配位Sn/Pb, 而是平面四配位Al, 其中杂原子Sn/Pb采取二配位方式, 此外, Sn/Pb采取三配位方式的非平面结构的稳定性也要优于平面四配位Sn/Pb结构.     

Mixing Layers in Sink Flow: Effect of Length of Flight on Mixing in a Channel Downstream

We have experimentally and analytically studied transport of a passive scalar in the wake of a thin flat plate located at the centerline of a planar contraction with flat walls. The constant Launder parameter in the contraction, K = 6.25 ×10^− 6, was twice the value required for a turbulent boundary layer to relaminarize. In addition to the mixing analysis inside the contraction, layer mixing is also investigated downstream, where the flow continues inside a constant cross-section channel. In order to generate the passive scalar, the airflow above the plate was heated and the temperature stratification in the wake was traced by measuring the temperature field using constant current anemometry. Using different plate lengths, we found that the degree of mixing, obtained at a given position in the straight channel, is a function of the distance from the plate trailing edge to the contraction outlet. For a plate which does not protrude into the straight channel, we demonstrate the existence of an optimal trailing edge-contraction outlet distance that results in the lowest possible degree of mixing at a given downstream position in the straight channel. This finding is also supported by a semi-empirical relationship based on our developed self-similar solution for mixing layers in planar contractions.     

场限制环的安全环距设计原理

场限制环作为一种可与许多器件工艺相容的ＰＮ结终端得到了广泛应用。存在的一个问题是其效果随结构参数有过分敏感的变化。文中认为：作为设计指导思想的最佳环距原则是加重这一敏感性的重要原因。作为改进，提出了新的安全环距设计原则。按安全环距原则设计，除可明显缓解终端效果随结构参数敏感变化的问题外，还可有效地提高在同样结构和工艺条件下所制成器件的额定电压。     

Effects of band mixing on the radiative properties of a quantum well

The effect of band mixing and non-parabolicity on quantum well gain and spontaneous emission is studied using k.p theory. Spectra of gain and spontaneous emission are strongly modified but the relation of maximum gain versus nominal current density is not strongly affected.