GaN材料的高速生长对其C污染以及光致发光光谱的影响

利用金属有机化学气相沉积对GaN的高速生长进行了研究.结果表明,随着GaN生长速率的提高,其非故意掺杂的C含量也在提高,并且呈现出良好的线性关系.当生长速率由2μm/h增加至7.2μm/h时,利用SIMS测量发现其GaN中的C含量由2.9×1017增加至5.7×1018 cm-3 .研究表明,N空位的存在与C浓度之间存在紧密的联系。在高氨气分压生长条件下,N空位的浓度也在急剧下降。此时,与具有相近生长速率的常规样品相比,其C含量几乎下降了一个数量级。.光致发光光谱表明,黄带以及蓝带的强度与C污染存在线性关系.这个结果也证实了与C相关的缺陷是导致黄带以及蓝带发光的主要来源。     

光伏电站设计智能优化

由于目前光伏电站设计目前没有相应的标准,因此以个人经验为指导的情况,无法保证电站建设的成本最优,鉴于此问题,本文提出了一种光伏电站优化设计方法,基于模拟退火算法,通过对光伏区域中的组件进行最优分组来实现两级电缆成本的最优。并通过实际项目对该算法进行检验,达到比较理想效果。     

腔内元件对激光陀螺光波传输特性的影响

基于光线传输矩阵理论,结合高斯光束特征参数,研究了球面镜曲率半径和腔体长度变化对环形腔子午面和孤矢面内束腰半径的影响.结果表明:两束腰半径均随曲率半径和腔体长度的增大而增大.在此基础上,分析了这种变化对环形腔内光强分布、多横模耦合和光波传输等相位面大小的影响.     

基于低频噪声检测光耦器件可靠性的频域筛选方法?

针对光耦器件可靠性筛选,提出全频段阈值筛选方法检测光耦器件内部低频噪声。根据光耦器件内部的低频噪声完成光耦器件可靠性的筛选。实验中利用光耦器件测试系统检测200只光耦器件内部的低频噪声,计算这200只光耦器件全频段平均噪声谱,确定筛选的阈值,再根据光耦器件可靠性分类标准,判断被测器件可靠性等级。     

Elastomeric Electronic Skin for Prosthetic Tactile Sensation

This report demonstrates a wearable elastomer‐based electronic skin including resistive sensors for monitoring finger articulation and capacitive tactile pressure sensors that register distributed pressure along the entire length of the finger. Pressure sensitivity in the order of 0.001 to 0.01 kPa^?1 for pressures from 5 to 405 kPa, which includes much of the range of human physiological sensing, is achieved by implementing soft, compressible silicone foam as the dielectric and stretchable thin‐metal films. Integrating these sensors in a textile glove allows the decoupling of the strain and pressure cross‐sensitivity of the tactile sensors, enabling precise grasp analysis. The sensorized glove is implemented in a human‐in‐the‐loop system for controlling the grasp of objects, a critical step toward hand prosthesis with integrated sensing capabilities.     

High‐Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self‐Assembled Monolayer Doping

Most doping research into transition metal dichalcogenides (TMDs) has been mainly focused on the improvement of electronic device performance. Here, the effect of self‐assembled monolayer (SAM)‐based doping on the performance of WSe₂‐ and MoS₂‐based transistors and photodetectors is investigated. The achieved doping concentrations are ≈1.4 × 10¹¹ for octadecyltrichlorosilane (OTS) p‐doping and ≈10¹¹ for aminopropyltriethoxysilane (APTES) n‐doping (nondegenerate). Using this SAM doping technique, the field‐effect mobility is increased from 32.58 to 168.9 cm² V^?1 s in OTS/WSe₂ transistors and from 28.75 to 142.2 cm² V^?1 s in APTES/MoS₂ transistors. For the photodetectors, the responsivity is improved by a factor of ≈28.2 (from 517.2 to 1.45 × 10⁴ A W^?1) in the OTS/WSe₂ devices and by a factor of ≈26.4 (from 219 to 5.75 × 10³ A W^?1) in the APTES/MoS₂ devices. The enhanced photoresponsivity values are much higher than that of the previously reported TMD photodetectors. The detectivity enhancement is ≈26.6‐fold in the OTS/WSe₂ devices and ≈24.5‐fold in the APTES/MoS₂ devices and is caused by the increased photocurrent and maintained dark current after doping. The optoelectronic performance is also investigated with different optical powers and the air‐exposure times. This doping study performed on TMD devices will play a significant role for optimizing the performance of future TMD‐based electronic/optoelectronic applications.     

5G网络中DR-OC型D2D通信收益模型及定价研究

Device-to-Device(D2D)通信是下一代(5G)移动网络的重要组成部分。D2D设备间在不依赖基站的情况下直接进行数据传输,并通过重复使用蜂窝小区的频率资源从而提高移动通信系统的容量。为了激励蜂窝网络用户参与到D2D通信,运营商对D2D通信的定价是一个很关键的问题。文中首先介绍了D2D的基本概念及其四种主要类型,并就其中DR-OC型D2D通信定价提出了运营商和D2D设备的收益模型,然后仿真分析了网络中谱单价和奖励带宽对双方收益的影响。仿真结果显示运营商可以通过调整奖励带宽来协调双方收益以激励更多的用户参与到D2D通信。     

Photovoltaic Cells Involving the Nonconjugated Conductive Polymer Iodine-Doped Styrene-Butadiene-Rubber (SBR)

Novel photovoltaic cells involving a nonconjugated conductive polymer have been fabricated using titanium dioxide/doped styrene-butadiene-rubber/carbon on ITO coated PET substrates. Photocurrents and photo-voltages for different intensities of light (emission at 300–700 nm) have been measured. These cells have shown significantly higher photocurrents and photo-voltages compared to previous reports. A photocurrent density of about 0.25 mA/cm² and a photo-voltage of 0.74 V have been measured for a light intensity of ～4 mW/cm².