微纳米加工技术在纳米物理与器件研究中的应用

物质在纳米尺度下可能呈现出与体材料不同的物理特件，这正是纳米科技发展的基础之一。要想探索在纳米尺度下材料物埋性质的变化规律及可能的应用领域，离不开相应的技术手段，微纳米加工技术作为当今高技术发展的重要技术领域之一，是实现功能人工纳米结构与器件微纳米化的基础。本文根据几个不同的应用领域，介绍了微纳米加工技术在纳米物理与器件研究领域的应用。     

The Effect of Polymer Optoelectronic Properties on the Performance of Multilayer Hybrid Polymer/TiO2 Solar Cells

We report a study of the effects of polymer optoelectronic properties on the performance of photovoltaic devices consisting of nanocrystalline TiO₂ and a conjugated polymer. Three different poly(2‐methoxy‐5‐(2′‐ethylhexoxy)‐1,4‐phenylenevinylene) (MEH‐PPV)‐based polymers and a fluorene–bithiophene copolymer are compared. We use photoluminescence quenching, time‐of‐flight mobility measurements, and optical spectroscopy to characterize the exciton‐transport, charge‐transport, and light‐harvesting properties, respectively, of the polymers, and correlate these material properties with photovoltaic‐device performance. We find that photocurrent is primarily limited by the photogeneration rate and by the quality of the interfaces, rather than by hole transport in the polymer. We have also studied the photovoltaic performance of these TiO₂/polymer devices as a function of the fabrication route and device design. Including a dip‐coating step before spin‐coating the polymer leads to excellent polymer penetration into highly structured TiO₂ networks, as was confirmed through transient optical measurements of the photoinduced charge‐transfer yield and recombination kinetics. Device performance is further improved for all material combinations studied, by introducing a layer of poly(ethylene dioxythiophene) (PEDOT) doped with poly(styrene sulfonic acid) (PSS) under the top contact. Optimized devices incorporating the additional dip‐coated and PEDOT:PSS layers produced a short‐circuit current density of about 1 mA cm^–2, a fill factor of 0.50, and an open‐circuit voltage of 0.86 V under simulated AM 1.5 illumination (100 mW cm^–2, 1 sun). The corresponding power conversion efficiency under 1 sun was ≥ 0.4 %.     

二维非正交坐标斜方格金属光子带隙结构

金属光子带隙结构在高能加速器、微波真空电子器件和太赫兹波源等方面具有重要的应用前景.基于实空间传输矩阵理论，详细研究了非正交坐标系下二维斜方格金属光子带隙结构，给出了计算横电模、横磁模完全带隙结构的一般公式，并分析了填充系数、任意斜角及金属柱横截面对带隙结构的影响.计算结果在退化为正方格情况下时，与其他方法的计算结果取得很好的一致. 关键词： 光子晶体 金属光子带隙 传输矩阵法 微波真空电子器件     

应用LiNbO_3声表面波驱动的全光纤声光频移器

介绍一种工作在10.7MHz的全光纤声光频移器.它由在LiNbO_3基片上制作的叉指电极换能器产生的声表面波驱动.当驱动电功率1.5W时,频移光转换效率达35％.     

同轴型光电器件的研究开发

本文简要地介绍了武汉电信器件公司正在研究开发的同轴型光电器件，新的器件的工艺与结构特点以及主要技术指标、使用前景。     

变频器的选型及配置要点

本文针对应用广泛的通用变频器，提出了在变频器选型和外围配置中需要注意的一些问题。     

10-GHz Optical Comb in L-Band Region With Brillouin/Erbium-Doped Fibre Laser

A multiwavelength Brillouin/erbium fibre laser (BEFL) which operates in the long wavelength (L-band) region is demonstrated for potential applications in an L-band wavelength division multiplexing (WDM) communication system. The laser configuration consists of a long erbium-doped fibre to enable L-band amplification where two 3-dB couplers take a portion of the generated BEFL signal and re-inject it into the single mode fibre to seed a cascaded BEFL line in the same direction as the first BEFL line. A stable and strong laser comb of up to five lines with 10-GHz spacing has been obtained with a Brillouin pump (BP) of 9.2 mW and a 980 nm pump of 92 mW. The BEFL has shown a broad tuning range with a tuning characteristic for line #1 which is flat over a range greater than 9.9 nm.     

Saw and digital technologies in mutlicarrier demodulators

One key technology, for the implementation of future on-board processing payloads, is the multicarrier demodulator (MCD). The MCD is instrumental in allowing FDMA/TDM access schemes which optimize the use of on-board and ground resources in VSAT networks. This paper deals with the analogue and digital implementations of MCD, trying to assess the fields of application of each of the two technologies.     

Thick grids with circular apertures: A comparison of theoretical and experimental performance

In this paper a comparison between a rigorous electromagnetic model for transmission through a hexagonal array of circular waveguides in a series of thick, metallic screens and experimental measurements in the far infrared is made. It is found that there is excellent agreement between theory and experiment when the frequency is below that where any diffracted orders propagate. The agreement is still very good above this frequency. Below a frequency approximately equal to the cut-off frequency of the circular waveguides little power is transmitted. As the thickness of the screen is increased, this decrease in transmission becomes more abrupt. Also, for thick screens, resonances appear in the transmission spectrum which are analogous to those which appear in the spectra of two grids separated by a distance comparable to the wavelength of the radiation being used.     

Structural characterisation of Sb-based heterostructures by X-ray scattering methods

Antimonide-based superlattices dedicated to the elaboration of opto-electronic devices have been studied by X-ray scattering techniques. In particular, specular and non-specular X-ray reflectometry experiments have been performed on two MBE-samples elaborated with different shutter sequences at the interfaces. The results have shown a limitation of the incorporation of Sb species in the subsequent InAs layer for one of the samples, as expected.Then, a study on a InGaAs-cap layer/(InGaAs/AlAsSb)_N superlattice grown on a InGaAs/InP buffer layer by both specular X-ray reflectometry and High resolution X-ray diffraction is reported. In particular, the results have revealed the presence of a highly disturbed thin-layer on top of the MOVPE-made GaInAs, whose presence has been explained by In-concentration modification during the desoxidation procedure at the surface of the MOVPE-made GaInAs.Beside the results on the Sb-based heterostructures, the use of X-ray scattering metrology as a routinely working non-destructive testing method has been emphasized.