光电双基区晶体管中的光控电流开关效应

光电双基区晶体管体在光电混合模式工作条件下具有光控“Ｓ”型负阻特及其光控电流开关效应。测量了光照时ＩＢＥ－ＶＢＥ特性,Ｉｔｈ－Ｒｃ特性等曲线。并利用用电注入双基区晶体管的“Ｓ”型负阻产生机理解释了测得的结果。     

3-甲氧基二苯胺-4-重氮盐的制备及其光、热分解性质

３－甲氧基二苯胺－４－重氮盐（ＭＤＤＳ）与甲醛或４,４－二甲氧次甲基二苯醚的缩合物用作阴图ＰＳ版感光剂,Ｈｏｅｃｈｓｔ等公司［１～５］已有很多专利．可能是出于商业利益,关于ＭＤＤＳ的制备方法未见报道．我们［６］从苯胺钾与３－甲氧基氯苯出发,制备了这...     

光控生物不对称还原苯乙酮的研究

本文以类球红杆菌(Rhodobacter sphaeroides)为生物催化剂, 将苯乙酮催化还原成具有光学活性的手性醇. 研究了反应条件对该反应的影响.     

新型侧链偶氮聚电解质的合成及性能研究

通过自由基聚合合成了一种侧链型偶氮聚电解质 ,聚丙烯酸 2 [4 (4′ 羧基苯基偶氮 )苯基 ]乙酯(PCAPEA) .详细研究了PCAPEA水溶液的pH值对其紫外 可见光谱和光响应性的影响 .研究发现 ,PCAPEA水溶液的紫外吸收光谱对pH值具有高度敏感性 ,并且在不同pH值条件下其光响应性有很大差别 .这种差别反映了PCAPEA分子中的偶氮苯基团在水溶液中聚集状态的变化 .本论文还研究了PCAPEA与聚二烯丙基二甲基氯化铵 (PDAC)在不同溶剂中的静电逐层自组装 .研究发现 ,PCAPEA的水和有机溶剂的混合溶液也可用来进行自组装 ,这一新方法可用于水溶性差的聚电解质的自组装     

基于信息熵编码的改进图像编码方法研究

本文基于图像文件格式和信息熵编码算法研究基础上．结合哈夫曼编码和游程长度编码两种编码方式的优点对图像进行处理。改进形成一种新的图像文件编码方式。分析结果表明，谊图像编码方式具有两种编码方式的优点。其编码效率高于游程长度编码，实现远比哈夫曼编码简单。     

零代光致变色液晶树状物的光响应行为研究

研究了含4个己氧基偶氮苯基元的零代(G0)光致变色液晶树状物在氯仿和四氢呋喃中的吸收光强、最大吸收波长、摩尔消光系数、量子产率、活化能、异构转换率、反-顺光异构化反应速率常数、热回复异构化反应速率常数、光回复异构化反应平衡常数及速率常数.G0的光致变色反应数率常数为10-1s^-1,而含偶氮基元液晶聚硅氧烷的光致变色反应数率常数为10^-8s^-1,前者比后者快107倍.     

Photo-induced phosphorus radical involved semipinacol rearrangement reaction:Highly synthesis ofγ-oxo-phosphonates

Hydroxyphosphoric acids display the unique biological activities,and they have some attractive prospects as clinical drug moleculars.Herein,a new approach for the synthesis ofγ-oxo-phosphonates(the precursor of hydroxyphosphoric acid)has been established through the semipinacol rearrangement tactic involved the photo-induced phosphorus radical process.Most important,this transformation is avoid of the external oxidants,and occurs very well under the sunlight irradiation,meanwhile theγ-oxo-phosphonate was easily derivatized to obtainγ-hydroxyphosphoric acid,thus highlights the synthesis value of this method.     

Synthesis and novel reactivities of several 1,9-dithiaalkane-bridged thianthrene 10-oxides

The irreversible photolytic axial to equatorial change (3ax-4ax→3eq-4eq) and the irreversible thermal equatorial to axial change (3eq-4eq→3ax-4ax) of the S-O configuration were first observed. Meanwhile, the shorter 1,9-bridged derivative (2ax) exhibited the interesting photolytic degradation, affording 1,9-dithiadibenzothiophene (5) by the elimination of SO and ethylene.     

Photocured thiol-ene based optical fluorescence sensor for determination of gold(III)

This study describes the preparation and the characterization of a new thiol-ene based polymeric fluorescence sensor by photo initiated polymerization of trimethylolpropane tris(3-mercaptopropionate), 2-hydroxyethylacrylate, and 2,4,6-triallyloxy-1,3,5-triazine which are used as monomers and also a photo initiator (2,2-dimethoxy-2-phenylacetophenone) for its usage as optical sensor for gold ions. The thiol-ene based polymeric membrane sensor was characterized by using attenuated total reflectance-fourier transform infrared spectroscopy (ATR-FTIR) and scanning electron microscopy (SEM). The response characteristics of the sensors including dynamic range, pH effect, response time, and the effect of foreign ions were investigated. Fluorescence spectra showed that the excitation/emission maxima of the membrane were at 379/425 nm, respectively     

Nitrogen doped multilayer photo catalytically reduced graphene oxide floating gate: Al/PMMA/NrGO/SiO2/p–Si/Au based hybrid gate stack for non volatile memory applications

Photo catalytically assisted, multi–layer nitrogen doped reduced graphene oxide (ML–NrGO) is investigated as a promising charge storage layer in Al/PMMA/NrGO/SiO₂/p–Si/Au structure. A considerable memory window (ΔW) of ∼3.3 V at ± 7 V sweep voltage and long data retention upto ∼ 10⁵ s is demonstrated as an encouraging candidature for emerging memory hierarchies. The clockwise hysteresis supports the hole charge trapping mechanism in the NrGO based structure. The ML–NrGO memory devices provide the rapid programming, saturation of the program transients, store more data at less cost and reduced ballistic transport in the plane perpendicular to NrGO. The facile, solution processable, cost effective device processing and stable retention of the fabricated ML–NrGO based Al/PMMA/NrGO/SiO₂/p–Si/Au flash memory structures proves to be a potential alternative for existing EEPROM based embedded applications and also for commercial scale production of flash memory based on flexible organic electronics.