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971.
This paper investigates the applicability and accuracy of existing formulation methods in general purpose finite element programs to the finite strain deformation problems. The basic shortcomings in using such programs in these applications are then pointed out and the need for a different type of formulation is discussed. An arbitrary Lagrangian-Eulerian (ALE) method is proposed and a concise survey of ALE formulation is given. A consistent and complete ALE formulation is derived from the virtual work equation transformed to arbitrary computational reference configurations. Differences between the proposed formulations and similar ones in the literature are discussed. The proposed formulation presents a general approach to ALE method. It includes load correction terms and is suitable for rate-dependent and rate-independent material constitutive law. The proposed formulation reduces to both updated Lagrangian and Eulerian formulations as special cases. 相似文献
972.
973.
When trains of impulse controls are present on the right-hand side of a system of ordinary differential equations, the solution
is no longer smooth and contains jumps which can accumulate at several points in the time interval. In technological and physical
systems the sum of the absolute value of all the impulses is finite and hence the total variation of the solution is finite.
So the solution at best belongs to the space BV of vector functions with bounded variation. Unless variable node methods are
used, the loss of smoothness of the solution would a priori make higher-order methods over a fixed mesh inactractive. Indeed
in general the order of -convergence is and the nodal rate is . However in the linear case -convergence rate remains but the nodal rate can go up to by using one-step or multistep scheme with a nodal rate up to when the solution belongs to . Proofs are given of error estimates and several numerical experiments confirm the optimality of the estimates.
Received March 15, 1996 / Revised version received January 3, 1997 相似文献
974.
R. Pendavingh 《Combinatorica》1998,18(2):281-292
, where μ and λ are minor-monotone graph invariants introduced by Colin de Verdière [3] and van der Holst, Laurent, and Schrijver
[5]. It is also shown that a graph G exists with . The graphs G with maximal planar complement and , characterised by Kotlov, Lovász, and Vempala, are shown to be forbidden minors for .
Received: June 13, 1997 相似文献
975.
R. Niebuhr K. H. Bachem U. Kaufmann M. Maier C. Merz B. Santic P. Schlotter H. Jürgensen 《Journal of Electronic Materials》1997,26(10):1127-1130
Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N2O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried
ammonia using nitrogen (N2) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using
trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface.
Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N2O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations
in the range of 4×1016 cm−3 to 4×1018 cm−3 as measured by Hall effect. The observed carrier concentration increased with increasing N2O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B
exciton emission an exciton bound to a shallow donor. With increasing N2O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons.
These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius
and electronegativity arguments. 相似文献
976.
Atomic layer epitaxy or ALE has proven to be useful for the growth of epitaxial layers of high uniformity, good quality, and
well-controlled thickness. In this study, we have carried out in-situ monitoring during the atmospheric pressure ALE of CdTe on GaAs (100) substrates using spectroscopic ellipsometry (SE). The
susceptor temperature, reactant partial pressures, as well as the flow and flush duration for each precursor are crucial process
variables for ALE growth. Growth was carried out for 20–25 cycles under different sets of these process conditions during
the experiment and in-situ SE was used to verify the presence of layer-by-layer growth, which enabled the quick determination of the process window.
We observed ALE growth of CdTe at 300°C, supporting the explanation that the growth of CdTe occurs via a surface catalyzed
decomposition of the Te precursor di-isopropyltelluride (DIPTe). Investigation of ALE mode growth behavior for different susceptor
temperatures and DIPTe flush times indicated that the growth was limited by competition between desorption and reaction of
the adsorbed DIPTe species on the Cd terminated surface. 相似文献
977.
978.
Wolfgang M. Ruppert 《manuscripta mathematica》1998,96(1):17-22
If K is a number field of degree n over Q with discriminant D
K
and if α∈K generates K, i.e. K=Q(α), then the height of α satisfies with . The paper deals with the existence of small generators of number fields in this sense. We show: (1) For each $n$ there are
infinitely many number fields K of degree $n$ with a generator α such that . (2) There is a constant d
2 such that every imaginary quadratic number field has a generator α which satisfies .?(3) If K is a totally real
number field of prime degree n then one can find an integral generator α with .
Received: 10 January 1997 / Revised version: 13 January 1998 相似文献
979.
Mohamed Krir 《manuscripta mathematica》1998,96(1):9-16
Let R be a complete discrete valuation ring with mixed characteristic. Denote by K its field of fractions and by k its residue field. Let 0 →A
K
→B
K
→C
K
→ 0 be an exact sequence of abelian varieties over K and consider the corresponding complex of Nérons models 0 →A→B→C→ 0, over R. We assume that the identity component B
k
0 of the special fibre B
k
of B is a torus and we study the defect of exactmess at B in this last sequence.
Re?u: 4 décembre 1997/ Version revisée: 15 décembre 1997 相似文献
980.
灰色模型的最优化及其参数的直接求法 总被引:2,自引:0,他引:2
基于灰色模型的内涵表达式和白化方程响应式均为等比级数的观点,提出了一种不用求ago值、均值,不涉及灰色微分方程,白化微分方程概念,直接求灰色模型参数a,c的方法,通过此方法建立的新模型不仅从理论上可保证是在满足给定评价标准为模拟绝对误差平方和最小(或模拟相对误差平方和最小)、给定精度条件下的最优化模型,从而结束了灰色模型只有更优,没有最优的历史.并从理论上证明了新模型具有白化指数律重合性、白化系数律重合性,伸缩变换一致性.最后通过实例编程验证该方法具有可操作性,且预测精度高,效果好. 相似文献