Laser Annealing of Thin-Film Ferroelectric Heterostructures

Preliminary experiments on laser annealing of ferroelectric samples by ultraviolet radiation of a KrF laser are carried out. In principle, laser annealing allows one to reduce appreciably the duration of thermal action, minimize the size of the samples treated, and control the crystallization processes in the samples. A special focussing system was employed to provide homogeneous irradiation of the spot with dimensions of ~1×1 cm² within a broad energy range from 0.1 to 10~J per pulse. The range of energy densities leading to phase transitions in thin films is determined.     

Effect of nonstoichiometry on Raman scattering of VO2 films

We report on Raman scattering of VO2 films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO2 films, compared with the stoichiometry VO2 films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO2 films is discussed.     

Cu-MgF2复合纳米金属陶瓷薄膜的电导特性研究

用射频磁控共溅射法制备了Cu体积分数分别为 10 % ,15 % ,2 0 %和 3 0 %的Cu MgF2 复合金属陶瓷薄膜 .用x射线衍射、x射线光电子能谱和变温四引线技术对薄膜的微结构、组分及电导特性进行了测试分析 .微结构分析表明 :制备的Cu MgF2 复合薄膜由fcc Cu晶态纳米微粒镶嵌于主要为非晶态的MgF2 陶瓷基体中构成 ,Cu晶粒的平均晶粒尺寸随组分增加从 11 9nm增至 17 8nm .5 0— 3 0 0K温度范围内的电导测试结果表明 :当Cu体积分数qM 由 15 %增加到 2 0 %时 ,Cu MgF2 复合薄膜的电阻减小了 8个量级 ,得出制备的复合薄膜渗透阈qCM 应处于 15 %和 2 0 %之间 .qM 在 10 %和 15 %之间的薄膜呈介质导电状态 ,而在 2 0 %和 3 0 %之间的薄膜则呈金属导电状态 .从理论上讨论了复合薄膜中杂质电导和本征电导的激活能及其对电导的贡献 ,并讨论了Cu MgF2 复合纳米金属陶瓷薄膜的渗透阈 ,得到了和实验一致的结果     

60keV质子辐照对TiNi记忆合金薄膜马氏体相变的影响

 利用磁控溅射的方法在氧化后的单晶Si基片上制备了TiNi形状记忆合金薄膜，利用示差扫描量热法和原位X射线衍射研究了薄膜的马氏体相变特征。通过60keV质子注入（辐照）薄膜样品研究了H+离子对合金薄膜马氏体相变特征的影响，结果表明氢离子注入后引起了马氏体相变开始Ms和结束点Mf以及逆马氏体相变开始As和结束温度Af的下降，而对R相变开始Rs和结束温度Rf影响不大。掠入射X射线衍射表明H+离子注入后有氢化物形成。H⁺离子注入形成的氢化物是引起相变点的变化的主要因素。     

压电陶瓷压电特性的激光调制法测量研究

介绍可测量压电陶瓷压电特性的激光干涉调制测量方法.采用相干检测原理对信号进行提取,不仅可以抑制噪声对干涉信号的影响,而且还可以大大降低光电探测器和电路的1/f噪声.与通常干涉仪测量方法相比,这种方法具有测量灵敏度高等优点.利用该方法对压电陶瓷压电特性进行了测量,讨论了激励电压信号的频率、幅度对压电陶瓷压电常数d₃₁的影响,并对其压电迟滞曲线进行了测量.     

超分子有机薄膜

利用超分子有机薄膜技术能制成新的传感分子电子器件、光学器件和生物分子器件等，受到跨学科高技术研究领域的重视。本文描述了超分子有机薄膜的制备方法以及在各应用领域的研究状况。重点介绍了我们研究组在近20年工作中，利用LB膜技术，在光电器件、气体传感技术和光学非线性，特别是在生物传感技术方面的研究成果。按照生物体系提供的信息，模拟合成功能分子，建造有组织的分子组装体，以便用来研究依赖于分子排列的生物物理化学效应。     

Structure and optical properties of lead iodide based two-dimensional perovskite compounds containing fluorophenethylamines

Phenethylammonium-based perovskites, which can be regarded as a semiconductor/insulator multiple quantum well consisting of lead halide semiconductor layers sandwiched between phenethylammonium insulator layers were prepared. To investigate the effects of the electronic state and the orientation of organic insulator layers on the optical properties of layered perovskites, fluorine substituted analogues were also prepared. The structure and optical properties were investigated by the XRD, UV–Vis absorption, and fluorescence measurements. The exciton absorption peak was shifted by the substitution of fluorine atoms in organic ammonium compounds. It became clear that the optical properties of two-dimensional perovskite compounds were controlled by the substitution of fluorine atoms.     

劈刀和肋环夹持工况对超声键合换能系统电学特性的影响

通过实验分析了肋环夹持松紧度和劈刀存在两个因素对超声键合换能系统电学导纳特性的影响规律。对换能系统在悬挂有无劈刀和夹持8个松紧度等各个情况下进行谐振频率附近的导纳圆测量,确定换能系统等效电路各特征参数的变化情况。由实验结果的分析可知,劈刀的附加质量以及肋环松紧程度对换能系统谐振频率的影响不大,但劈刀的存在改变了换能系统的能量分布和耗散,是影响换能系统各特征参量的主要因素之一。这些结论有助于超声键合换能系统的优化。     

后退火温度对溅射沉积Pb(Zr0.52Ti0.48)O3铁电薄膜结构和性能的影响

在具有Ti缓冲层的Pt(111)底电极上,用射频溅射工艺在较低的衬底温度(370℃)和纯Ar气氛中沉积Pb(Zr0.52Ti0.48)O3(PZT)薄膜,沉积过程中基片架作15°摇摆以提高膜厚的均匀性。然后将样品在大气中进行5min快速热退火处理,退火温度550-680℃。用XRD、SEM分析薄膜的微结构,RT66A标准铁电测试系统测量样品的铁电和介电性能。结果表明,所沉积的Pt为(111)取向,仅当后退火温度高于580℃,沉积在Pt(111)上的PZT薄膜才能形成钙钛矿结构的铁电相,退火温度在580-600℃时结晶为(110)择优取向,退火温度高于600℃时结晶为(111)择优取向。PZT薄膜的极化强度随退火温度的升高而增加,但退火温度超过650℃时漏电流急剧上升,因此退火处理的温度对PZT薄膜的结构和性能有决定性的影响。