磁控溅射ZnO薄膜的成核机制及表面形貌演化动力学研究

利用原子力显微镜分析了ZnO薄膜在具有本征氧化层的Si(100)和Si(111)基片上的表面形貌 随沉积时间的演化. 通过对薄膜生长形貌的动力学标度表征，研究了射频反应磁控溅射条件 下，ZnO薄膜的成核过程及生长动力学行为. 研究发现，ZnO在基片表面的成核过程可分为初 期成核阶段、低速率成核阶段和二次成核阶段. 对于Si(100)基片，三个成核阶段的生长指 数分别为β₁=1.04，β₂=0.25±0.01，β₃=0.74；对 于Si(11 关键词： ZnO薄膜 磁控溅射 生长动力学 成核机制     

短波通滤光片膜系设计

详细介绍用等效折射率概念设计短波通滤光片的原理和计算方法。根据原理和方法，选择二氧化钛（TiO2）作为高折射率材料、二氧化硅（SiO2）作为低折射率材料。首先从理论上计算出用这2种材料设计的波长λ=950～1150nm的短波通滤光片所需要的周期数，然后给出短波通滤光片的主膜系和光谱曲线。由于据此周期数设计出的膜系光谱曲线在750～810nm处的透过率不符合要求，因此对该膜系进行了改进。依照改进的设计进行多次制备，最终制备出了符合要求的短波通滤光片，找到了最佳制备工艺和方法。最后，对制备出来的短波通滤光片薄膜进行了各种环境实验。实验结果表明，膜层的各项指标符合设计要求。     

基于ARX模型的压电智能结构振动预测控制

采用预测控制法对压电智能结构的振动主动控制进行了实验研究，通过实验方法建立了系统的ARX模型，并在此基础上设计了预测控制器对结构进行振动主动控制。实验结果验证了该方法在压电智能结构振动主动控制中的可行性和有效性。     

Deposition of Au/TiO2 film by pulsed laser

Au nanoparticles, which were photoreduced by a Nd:YAG laser in HAuCl₄ solution containing TiO₂ colloid and accompanied by the TiO₂ particles, were deposited on the substrate surface. The film consisting of Au/TiO₂ particles was characterized by the absorption spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. The adhesion between the film and substrate was evaluated by using adhesive tape test. It was found that the presence of TiO₂ dramatically enhanced the adhesion strength between the film and the substrate, as well as the deposition rate of film. The mechanism for the deposition of Au/TiO₂ film was also discussed.     

薄原子蒸汽膜的双光子光谱及Dicke窄化

薄原子蒸汽膜的单光子Dcike窄化吸收光谱可以拓展到双光子情形，以级联三能级系统为例,从理论上得到了亚多普勒结构的双光子吸收光谱，其线型表现出和单光子过程相似的与膜厚和探测光波长的比值(L/λ)相关的周期性.当L/λ=(2n+1)/2(膜厚为半波长的奇数倍)时，吸收谱线窄化现象明显.当L/λ=2n/2(膜厚为半波长的偶数倍)时，单光子情形的谱线窄化现象消失，而双光子情形的谱线仍表现为亚多普勒结构，尤其在异侧入射的情形下，可以获得极窄的双光子谱线结构. 这种结构来自原子与腔壁碰撞的消激发效应和双光子过程的抽运-探测机制的贡献. 关键词： 薄原子蒸汽膜 双光子光谱 Dicke窄化     

The epitaxial sexiphenyl (0 0 1) monolayer on TiO2(1 1 0): A grazing incidence X-ray diffraction study

A para-sexiphenyl monolayer of near up-right standing molecules (nominal thickness of 30 Å) is investigated in-situ by X-ray diffraction using synchrotron radiation and ex-situ by atomic force microscopy. A terrace like morphology is observed, the step height between the terraces is approximately one molecular length. The monolayer terraces, larger than 20 μm in size, are extended along the [0 0 1] direction of the TiO₂(1 1 0) substrate i.e. along the Ti-O rows of the reconstructed substrate surface. The structure of the monolayer and its epitaxial relationship to the substrate is determined by grazing incidence X-ray diffraction. Extremely sharp diffraction peaks reveal high crystalline order within the monolayer, which was found to have the bulk structure of sexiphenyl. The monolayer terraces are epitaxially oriented with the (0 0 1) plane parallel to the substrate surface (out-of-plane order). Four epitaxial relationships are observed. This in-plane alignment is determined by the arrangement of the terminal phenyl rings of the sexiphenyl molecules parallel to the oxygen rows of the substrate.     

Correlated and non-correlated growth kinetics of pentacene in the sub-monolayer regime

We present a study of the growth kinetics of pentacene monolayer islands on SiO₂ in the submonolayer regime by using Atomic Force Microscopy (AFM). Two distinct growth modes, namely correlated growth (CG) and non-correlated growth (NCG), have been identified by Voronoi tesselation. These two modes are characterized by different island growth kinetics. In the case of correlated growth, the average island size 〈A〉 scales with deposition time t i.e. 〈A〉 ∝ t whereas for non-correlated growth, 〈A〉 ∝ t². The CG and NCG regimes are defined by the level of re-evaporation which determines the capture zones around the islands: Wigner-Seitz cells for CG and coronas of width λ_D (λ_D is the mean diffusion distance on SiO₂ before re-evaporation) for NCG. A simple model is proposed to reproduce the experimental growth kinetics in both modes.     

只读式超分辨光盘的膜层设计和分析

超分辨技术是一种无需减小记录波长或增大数值孔径而提高存储密度的方法。Ge Sb Te是一种良好的相变光存储材料 ,在超分辨光盘中可作为掩膜。利用多层膜反射率的矩阵法计算了掩膜为Ge2 Sb2 Te5薄膜的超分辨只读式光盘的光学参数与各膜层厚度之间的关系 ,最后得到了较为理想的膜层厚度匹配。采用磁控溅射法制备了只读式超分辨光盘 ,测量了光盘的光学性质。     

0.18μm CMOS工艺栅极氧化膜可靠性的衬底和工艺依存性

用斜坡电压法(Voltage Ramp, V-ramp)评价了0.18μm双栅极 CMOS工艺栅极氧化膜击穿电量(Charge to Breakdown, Q_bd)和击穿电压(Voltage to Breakdown, V_bd). 研究结果表明，低压器件(1.8V)的栅极氧化膜(薄氧)p型衬底MOS电容和N型衬底电容的击穿电量值相差较小，而高压器件(3.3V)栅极氧化膜(厚氧)p衬底MOS电容和n衬底MOS电容的击穿电量值相差较大，击穿电压测试值也发现与击穿电量 关键词： 薄氧 可靠性 击穿电压 击穿电量     

Au/SiO2纳米多层薄膜的制备及其性质表征

利用多靶磁控溅射技术制备了Au/SiO₂纳米颗粒分散氧化物多层复合薄膜.研究了在保持Au单层颗粒膜沉积时间一定时薄膜厚度一定、变化SiO₂的沉积时间及SiO₂的沉积时间一定而改变薄膜厚度时，多层薄膜在薄膜厚度方向的微观结构对吸收光谱的影响.研究结果表明：具有纳米层状结构的Au/SiO₂多层薄膜在560 nm波长附近有明显的表面等离子共振吸收峰，吸收峰的强度随Au颗粒的浓度增加而增强，在Au颗粒浓度相同的情况下，复合薄膜 关键词： 2纳米复合薄膜')" href="#">Au/SiO₂纳米复合薄膜 多靶磁控溅射 吸收光谱 有效介质理论