Lamp Metro

如果爱迪生奇迹般地活到今天，他可能打死也不会相信Lamp Metro会是一只灯。像卷透明胶布的Lamp Metro由3M OLF薄膜制成．当你要使用它时．握住两头的把手将其拉直再通电．Lamp Metro就能像一只普通的日光灯管那样．存在于家里的任何一个角落了。你惟一要考虑的事就是将它放在哪里：墙上、天花板或者是地板上……     

刻蚀铜薄膜的新技术

日本三井金属公司开发了刻蚀铜薄膜的新技术。此技术采用新型铜薄膜的刻蚀液，保证垂直刻蚀。因而铜线宽度可设计成比以前宽度窄1／3，即20μm。采用此技术可将TFT-LCD电视更轻量化，并降低了成本。     

Organic Electroluminescent Thin Film Using 8—hydroxyquinoline Zinc as Emitting Layer

Organic electroluminescent thin film using Znq2(Znq2) as the emitting layer material with structure of glass/ITO/Znq2/Al(cell) was fabricated.The V-I curve ,V-B curve and electroluminescent spectra of the cell were measured.Meanwhile the fluorescent spectra, excited spectra and absorption spectra of Znq2 with power and film states were also measured.     

非晶硅薄膜的低温快速晶化及其结构分析

在镀铝的廉价玻璃衬底上高速沉积的非晶硅薄膜在不同的温度下退火10min.退火温度为500℃时,薄膜表面形成了硅铝的混合相,非晶硅薄膜开始呈现了晶化现象 退火温度为550℃时,大部分(约80%)的非晶硅晶化为多晶硅,平均晶粒尺寸为500nm 退火温度为600℃时,几乎所有的非晶硅都转化为多晶硅,其平均晶粒尺寸约为15μm.     

Influences of Thalliation on the Morphology and Critical Temperature of Tl2Ba2CaCu2O8 Thin Films

Tl2Ba2CaCu2Ox(Tl-2212) thin films were prepared by the two-step technique.A precursor film was first prepared by the pulsed laser deposition method,and then experienced the incorporation of thalliation in a one-step or two-step annealing process.The experimental results show that the two-step annealing process produces dense and smooth films,and that the one-step annealing process produces a high critical temperature film of 101K,but the transition width is wide.Precursor films with homogeneous Ba2Ca1.3Cu2.1Ox composition are essential for producing high-quality Tl-2212 films.     

Hydrogenation Properties of Zr Films Under Various Conditions of Hydrogen Plasma

The hydrogenation properties of Zr samples with and without an Ni overlayer under various plasma conditions were investigated by means of non-Rutherford backscattering and elastic recoil detection analysis.The theoretical maximum hydrogen capacity,66.7 at%,could be achieved at a hydrogen absolute pressure of-2Pa and a substrate temperature of-393K for a plasma irradiation of only 10min;this was significantly greater than that for gas hydrogenation under the same hydrogen pressure and substrate temperature.It was also found that the C and O contamination on the sample surface strongly influences the hydrogenation,and that the maximum equilibrium hydrogen content drops dramatically with the increasing total contamination.In addition,the influence of the Ni overlayer on the plasma hydrogenation is discussed.     

过氧聚钨酸薄膜上光栅的制备

用过氧聚钨酸（PPTA）水溶液，通过离心涂膜法在显微镜载玻片上制备了具有光滑表面且厚度为100nm的PPTA薄膜，利用PPTA薄膜在紫外光照下可研制光栅以及其它光学元件的薄膜材料，具有很高的利用价值。     

高速响应碳化硅薄膜热敏电阻

将氧化铝基板表面高频溅射碳化硅薄膜而构成的热敏电阻芯片焊接在一端封口的圆柱金属外壳内,能够探测温度的热时间常数大约为0.6秒。