Formation of n-channel polycrystalline-Si thin-film transistors by using retrograde channel scheme with double implantation

Excellent n-channel poly-Si thin-film transistors (poly-Si TFTs) have been formed by using retrograde channel scheme with channel doping implantation and extra counter-doping implantation. As compared to the conventional sample with undoped channel layer, a much smaller leakage current can be achieved by boron-doping the poly-Si channel layer, due to a significantly reduced depletion region. However, the on-state characteristics are degraded. A retrograde channel scheme, implemented by further phosphorus counter-doping the surface of the boron-doped channel layer, is proposed for lowering the channel surface doping concentration without changing the bulk channel doping concentration. By using the retrograde channel scheme, an off-state leakage current as low as that for the normal channel-doping scheme may be achieved, while yielding excellent on-state I-V transfer characteristics.     

Reducing leakage power with BTB access prediction

This paper investigates three architectural methods to reduce the leakage power dissipated by the BTB data array. The first method (called here window) periodically places the entire BTB data array into drowsy mode. A drowsy entry is woken up by the first access in the time interval and remains active for the remainder of the interval (window). There is an associated performance loss which is related to the size of the window, since there is a delay when a specific line must be woken up. The second method, awake line buffer (ALB), limits the number of active BTB entries to a predetermined maximum. While this reduces power dissipation it comes with a performance penalty that is relative to the size of the buffer. ALB, however, reduces the power dissipation of the data array more than the window method. The third method, 2-level ALB (2L-ALB), uses a two level buffer with the identical number of combined entries as the previous method. This method exploits the fact that many branches operate numerous times in a fixed sequence. By predicting the next BTB access, 2L-ALB achieves further reduction in leakage power without incurring any further performance loss, compared to the ALB method.     

掺Fe3+A-TiO2粉末的制备及其可见光催化降解碱性品红

以硫酸钛为原料用水热法制备了掺Fe3+TiO2粉末,用SEM测定了样品的形貌和晶型,研究了以自制的掺Fe3+ A-TiO2对碱性品红溶液的光催化降解作用.结果表明:所制备的TiO2为锐铁矿型TiO2(A-TiO2).可见光照射下,用自制的掺Fe3+A-TiO2降解碱性品红溶液的最佳条件是:2mg·L-1的碱性品红溶液中...     

Effect of non-magnetic doping on leakage and magnetic properties of BiFeO3 thin films

In this paper, we show that the leakage current properties of BiFeO₃ (BFO) thin films have been greatly improved by Zr-doping. In contrast, the magnetic properties of Zr-doped BFO films are affected as a weak ferromagnetism. Beyond the double-exchange interactions arising from the creation of Fe²⁺, we propose another simple model considering the replacement of the magnetically active Fe³⁺, time to time, by a non-active Zr⁴⁺, which is expected to induce a local ferromagnetic coupling rather than an antiferromagnetic one.     

Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes

The effect of oxygen plasma treatment on the performance of GaN Schottky barrier diodes is studied. The GaN surface is intentionally exposed to oxygen plasma generated in an inductively coupled plasma etching system before Schottky metal deposition. The reverse leakage current of the treated diodes is suppressed in low bias range with enhanced diode ideality factor and series resistance. However, in high bias range the treated diodes exhibit higher reverse leakage current and corresponding lower breakdown voltage. The X-ray photoelectron spectroscopy analysis reveals the growth of a thin GaO_x layer on GaN surface during oxygen plasma treatment. Under sub-bandgap light illumination, the plasma-treated diodes show larger photovoltaic response compared with that of untreated diodes, suggesting that additional defect states at GaN surface are induced by the oxygen plasma treatment.     

（3＋1）维破碎孤子方程的变量分离解和局域激发模式

多线性分离变量法已成功地应用于诸多（2＋1）维非线性可积系统.将该方法拓展运用于（3＋1）维破碎孤子方程中,获得了含任意函数的变量分离解.通过适当地设定任意函数的形式,得到了（3＋1）维破碎孤子方程丰富的局域激发模式.     

无线通信系统中时频域联合的机会频谱接入算法

该文讨论一个多信道的无线通信系统,信道建模为慢衰落瑞利信道。根据信道信噪比,将信道质量划分多个状态,每个状态对应一个最大传输速率。此类系统中,发送节点一般已知信道状态的部分信息,并可以通过逐信道探测的方法获取实时的信道状态信息(Channel State Information,CSI)。而探测过程会消耗可以用于真正数据包(DATA)的时间。通过分析基于最优停止时间理论的机会频谱接入算法的局限性,该文提出了时频域联合的机会频谱接入算法,仿真分析证明在不同条件下本算法性能优越。     

将RRU与思想一起拉远——中兴通讯GSM—R隧道覆盖解决方案

文章介绍了GSM—R隧道覆盖设计原则，提出了中兴通讯公司“BBU＋RRU”配合泄漏电缆的隧道覆盖解决方案，并对短遂道、中等遂道、隧道群下的具体组网方式进行了介绍。     

迈向新纪元的Cable Modem技术

Cable Modem技术能充分利用有线电视同轴电缆的带宽优势高速优势高速传送数据，因此业内人士普遍看好电缆接入在宽带应用领域的优势。与DSL和无线技术相比，Cable Modem具有标准完善、成本低廉、资源丰富、网络可靠、兼容性强等优点。美国ADC公司开发的Cudal2000来台是该领域最新的产品，极具发展潜质。