HL—1装置等离子体粒子平衡的光谱研究

本文描述HL-1装置器壁碳化,观察了碳化前后氢的约束时间和再循环现象,同时还观察了加抽气孔栏条件下粒子约束时间和再循环的变化。实验表明,碳化后氢的再循环增大,使用抽气孔栏可以控制壁附近边缘等离子体的粒子密度,粒子约束时间比不用抽气孔栏增大17.7％,再循环系数减小13.2％。     

16元非晶硅荧光探测器的结构和工艺

研究一种新型的非晶硅ＰＩＮ异质结荧光探测器的结构和制备工艺，详细讨论了探测器单元的结构优化设计和暗电流和灵敏度等特性，实验表明，采用α－ＳｉＣ／α－Ｓｉ异质结构，提高沉积非晶硅基薄膜的本底真空度，优化制备工艺，可制备高信噪比的非晶硅荧光探测器。     

10Gbit／s高速GaInAs／InP平面PIN的研究

本文报道了平面结构正面进光高速ＧａＩｎＡｓ／ＩｎＰ平面ＰＩＮ光电二极管（使用Ｓｉ－ＩｎＰ衬底）。该器件具有高的稳定性（在１５０℃下经１４４０小时高温老化后，暗电流无变化），大带宽（１５ＧＨｚ），高响应度（在１．３μｍ波长下，响应度为０．９４Ａ／Ｗ）。     

基于PIN二极管加载的机载相控阵天线RCS缩减

现代飞机未来要实现射频隐身性能的最大化,就要求机载雷达的开机时间越来越短,这就为机载雷达不开机期间,相控阵天线的低RCS 隐身设计提供了可能。在天线非工作时段,加载PIN 二极管有效地减小了微带天线的RCS。PIN 二极管在正向偏置和反向偏置状态下可分别等效为电阻和电容。针对不同入射状态的平面波,依据天线感应电场分布确定PIN二极管的偏置状态,并对正向偏置状态的PIN二极管的等效电阻值进行优化,实现天线RCS的缩减。仿真计算结果表明,在天线非工作时段,优化PIN二极管的工作状态,可以实现当前情况(入射方向、频率)下天线RCS 的缩减,且RCS缩减最大可超过25 dBsm;同时又可保证天线在工作时段的辐射性能不受影响。     

Reliability analysis of component-level redundant topologies for solid-state fault current limiter

Experience shows that semiconductor switches in power electronics systems are the most vulnerable components. One of the most common ways to solve this reliability challenge is component-level redundant design. There are four possible configurations for the redundant design in component level. This article presents a comparative reliability analysis between different component-level redundant designs for solid-state fault current limiter. The aim of the proposed analysis is to determine the more reliable component-level redundant configuration. The mean time to failure (MTTF) is used as the reliability parameter. Considering both fault types (open circuit and short circuit), the MTTFs of different configurations are calculated. It is demonstrated that more reliable configuration depends on the junction temperature of the semiconductor switches in the steady state. That junction temperature is a function of (i) ambient temperature, (ii) power loss of the semiconductor switch and (iii) thermal resistance of heat sink. Also, results’ sensitivity to each parameter is investigated. The results show that in different conditions, various configurations have higher reliability. The experimental results are presented to clarify the theory and feasibility of the proposed approaches. At last, levelised costs of different configurations are analysed for a fair comparison.     

基于接地式开关的三波段可重构功率放大器的设计

采用基于接地式开关的单频可重构阻抗变换网络,设计了一款可以工作在三个波段的可重构功率放大器。与其他可重构功率放大器相比,该功放输出匹配电路的设计复杂度相对较低,对各个工作频率的跨度要求很小,同时有效节约了频谱资源。为了验证方案的可行性,采用型号为CGH40010F 的GaN 晶体管设计了一款工作在1.75 GHz、2.1 GHz 和2.6 GHz 的可重构功率放大器,制作实物并进行测试。测试结果表明该结构使功放在工作的三个频段上具有良好的输出功率、效率及增益,各个频段之间的切换更加方便。     

非高斯背景下的自适应限幅检测研究

针对非高斯背景下局部最优检测（Locally Optimal Detector,LOD）结构复杂、稳健性弱的问题,对传统的限幅器进行改进,提出了一种自适应限幅检测器（Adaptive Limiter Detector,ALMD）.首先对弱信号的检测性能进行了系统研究,然后依据混合高斯模型对非高斯背景建模,在此基础上得到了限幅阈值与限幅检测性能之间的解析表达式,最后通过推导确定了最佳限幅阈值,明显提高了检测性能.仿真结果表明ALMD与LOD性能接近,但结构简单,性能稳健,适应性更强.     

L波段高功率单刀双掷开关设计与实现

选用PIN二极管设计了一款工作在L 波段的高功率单刀双掷(SPDT)开关,能耐受100 W连续波功率信号。开关采用串并联结构,增大开关的隔离度的同时拓宽了带宽。通过厚膜工艺、丝网印刷制作微带线、微组装工艺完成各个器件焊接互联,完成开关的制作。开关采用-5 V/+30 V 的偏置电压进行控制。实测表明:该单刀双掷开关在1~2 GHz 内,插入损耗小于0. 7 dB,频带内输入驻波比和输出驻波比均小于1.4,隔离度大于25 dB,在连续波100 W 功率下,二极管最高温度为122.6 ℃,满足设计需求。     

脉冲辐射探测信号模拟光纤传输系统

为实现极端实验环境下脉冲辐射探测信号的远距离 传输,采用电光转换和光电转换的方法设计了 一套模拟光纤传输系统。该系统基于DFB激光器的强度直接调制特性实现了电光转换;以运 算放大器为主 体构建了激光器驱动电路;利用专用集成芯片MAX1968实现了激光器 半导体PN结的无死区温度控制。为 提高系统测试精度,光接收端采用带有暗电流校正的平衡PIN 前置放大器将光信号还原为电 信号,以提高 系统动态范围。最后,实验测试了系统性能指标。结果表明,系统的－3dB带宽为DC~155 MHz,线性动态 范围> 40 dB(100倍),输出噪声峰-峰值<3mV。该系 统适用于对传输带宽、安全性等要求高的科学研究中。     

Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors

Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnace.The optical characteristics of the Zn-diffused InP layer for the planar-type InGaAs/InP PIN photodetectors grown by molecular beam epitaxy (MBE) has been investigated by photoluminescence (PL) measurements.The temperature-dependent PL spectrum of Zn-diffused InP samples at different diffusion temperatures showed that band-to-acceptor transition dominates the PL emission,which indicates that Zn was commendably diffused into InP layer as the acceptor.High quality Zn-diffused InP layer with typically smooth surface was obtained at 580 ℃ for 10 min.Furthermore,more interstitial Zn atoms were activated to act as acceptors after a rapid annealing process.Based on the above Zn-diffusion technique,a 50μm planar-type InGaAs/InP PIN photodector device was fabricated and exhibited a low dark current of 7.73 pA under a reverse bias potential of-5 V and a high breakdown voltage of larger than 41 V (I ＜ 10 μA).In addition,a high responsivity of 0.81 A/W at 1.31 μm and 0.97 A/W at 1.55 μm was obtained in the developed PIN photodetector.