Markov-modulatedPH/G/1 queueing systems

We study a PH/G/1 queue in which the arrival process and the service times depend on the state of an underlying Markov chain J(t) on a countable state spaceE. We derive the busy period process, waiting time and idle time of this queueing system. We also study the Markov modulated E_K/G/1 queueing system as a special case.     

Explicit solutions for the steady state distributions in M/PH/1 queues with workload dependent balking

We consider an M/PH/1 queue with balking based on the workload. An arriving customer joins the queue and stays until served only if the system workload is below a fixed level at the time of arrival. The steady state workload distribution in such a system satisfies an integral equation. We derive a differential equation for Phase type service time distribution and we solve it explicitly, with Erlang, Hyper-exponential and Exponential distributions as special cases. We illustrate the results with numerical examples.     

Optical transitions in Er^3＋ doped lead germanate glasses

Er^{3+}- and Er^{3+}/Yb^{3+}-doped lead germanate glasses that are suitable for use in fibre lasers and optical amplifiers as well as optical waveguide devices have been fabricated and characterized. The absorption spectra from near-infrared to visible were obtained and the Judd－Ofelt parameters were determined from the absorption band. Intense and broad 1.53μm infrared fluorescence and visible upconversion luminescence were observed under 976 nm diode laser excitation. For 1.53μm emission band, the full widths at half-maximum are 36, 37, 51 nm for GPE, GPYE and GPFE samples, respectively. For frequency upconversion emission, the intense bands centred at around 524, 545, 657nm are due to the {}^4S_{3/2}+{}^2H_{11/2}→{}^4I_{15/2} and {}^4F_{9/2}→{}^4I_{15/2} transitions of Er^{3+} ions. The quadratic dependence of the green and red emissions on excitation power indicates that the two-photon absorption process occurs under the 976nm excitation.     

Characterisation of a Schottky ISFET as Hg-MOSFET and as cytochrome P450-ENFET

A cost-effective and simple method is proposed wherein a Schottky ion sensitive field effect transistor (Schottky ISFET)-based sensor is characterised as metal oxide semiconductor and enzyme field effect transistor (ENFET). This technique involves deposition of mercury (Hg) as gate material over the sensing layer mitigating the complexity of fabrication process, thereby eliminating the need of refabricating an identical device. A Schottky-based ISFET simplifies the fabrication process as the requisite for doping of source and drain regions becomes redundant. Steps involved in lithography process for fabricating metal oxide semiconductor field effect transistor (MOSFET) are reduced with the use of liquid metal Hg as gate over layer. Such a device can be transformed back to an ISFET without any additional etching process. Furthermore, the same ISFET device can be utilised as an ENFET when the former is used in conjunction with a biological element. In this work, a Schottky-based ISFET has been characterised as Hg-MOSFET and as cytochrome P450-ENFET. Multiple tests on the device exhibit that the same ISFET sensor can be used both as a MOSFET and an ENFET with good repeatability and versatility without losing its sensitivity.     

Development of an ion-sensitive field effect transistor based on PVC membrane technology with improved long-term stability

An NH -ISFET sensor based on PVC membrane technology with improved long-term stability has been developed. As a new approach, the plasticizer (tetra-n-undecyl) 3,3′,4,4′ -benzhydroltetracarboxylate (ETH2112) was used in membrane preparation. Its lipophilic nature provides a restricted diffusion of the membrane components to the external solution and improves membrane adhesion to the gate area of the ISFET. The good performance of this plasticizer was confirmed by comparison with usual plasticizers applied in standard ISE technology. Moreover, the durability and stability of the sensor were enhanced by the application of a graphite-epoxy layer as an internal reference between the gate area and the PVC membrane. This composite layer permits the reduction of the optical sensitivity and improves the adherence of the PVC membrane to the ISFET surface. Furthermore, this composite layer acts as a plug, preventing the entrance of water upon the encapsulant-chip interface, thus protecting electrical connections from moisture. As a result, an NH -ISFET with a long-term stability of three months and a sensitivity of −58.7 ± 2.3 mV decade⁻¹ in a linear range of 10⁻⁵ −0.1 mol dm⁻³ has been developed. The application of this sensor to a continuous-flow system has confirmed the feasibility of the technological approach proposed.     

Reducing the interference from CO2 or organic acids in ion-selective polymer membrane sensors having a field-effect transistor as internal reference element

Changes in sample concentrations of CO₂ or organic acids cause potential instabilities when polymer membranes are directly applied to the surface of ion-selective field-effect transistors (ISFETs). Currently used designs avoid this well-documented effect by placing a layer of aqueous buffer between polymeric membrane and ISFET serving as internal reference element. Here, we propose another solution to the problem. In order to compensate for the effect of pH changes on the ISFET threshold voltage, a double membrane is applied whose inner layer is pH-sensitive, while the outer layer exposed to the sample is a conventional ion-selective membrane. It is shown that this approach strongly reduces the earlier-mentioned interference effects.     

线性簇合物SC2nS2－(n =1～12)电子吸收光谱

应用密度泛函理论,在B3LYP/6-31G*水平上优化了线性簇合物SC2nS2－(n =1～12)的基态平衡几何结构,并计算了它们的谐振动频率.在基态平衡构型下,通过TD-B3LYP/cc-pvTZ和TD-B3LYP/cc-pvDZ计算,确定了簇合物SC2nS2－(n =1～10) 电子跃迁的垂直激发能和对应的振子强度.基于计算结果,导出了电子跃迁吸收波长与体系大小n的解析关系式,以及SC2nS2－体系第一电离能与体系大小n的解析表达式,并讨论了不同端位原子对碳链体系激发态性质的影响.     

亚稳态SO(c1Σ－,v’=0)的猝灭动力学

在流动余辉装置上, 研究了SO(c¹Σ^－)的猝灭动力学过程. 获得了SO₂, O₂, CO₂, N₂, He, CS₂, CH₃OH, C₂H₅OH, C₃H₇OH, C₄H₉OH, CH₃COCH₃, C₆H₆, CH₂Cl₂, CH₂Br₂, CHCl₃, CCl₄等16种分子与SO(c¹Σ^－)发生猝灭反应的速率常数. 初步分析表明: 醇类分子C_nH_2n+1OH(n=1, 2, 3, 4)中的C—H键的数目与其对SO(c¹Σ^－)的猝灭速率成正比; CO₂, N₂等非极性无机小分子对SO(c¹Σ^－)的猝灭作用不明显, 强极性分子SO₂对SO(c¹Σ^－)的猝灭作用较强. 卤代烷烃中的卤素原子的大小对SO(c¹Σ^－)的猝灭过程发挥着较重要的作用; 而氯代烷烃中氯原子的个数与猝灭速率之间的关系不明显.     

Enzymatic Biosensor Based on the ISFET and Photopolymeric Membrane for the Determinaion of Urea

An ISFET based enzymatic biosensor was developed for the determination of urea. Immobilization of urease was accomplished by the use of liquid mixture which contained vinylpyrrolidone, oligouretane metacrylate and oligocarbonate metacrylate and which can form a polymer under the influence of ultraviolet. The biosensor has the following characteristics: the linear field of responses is in the range of 0.05–20 mM, curve slope – 38 mV/pC, and response time 5–10 min. The increase of the temperature from 28 to 41 °C leads to 15% increase in the intensity of the response of the biosensor. The maximum response is observed at pH 6.0–6.5. At the increase of the NaCl concentration in solution up to 300 mM the biosensor response drops off and achieves half of its initial level. NH₄Cl causes a stronger inhibition of enzyme activity comparing to NaCl. The results obtained with the developed biosensor correlate with the data of standard calorimetric methods. The intensity of the biosensor response decreases gradually during 40 days up to 80% of the initial level. The biosensors prepared with a fresh membrane or membrane preserved during 46 days at 2 °C gave similar responses in solution with an equal concentration of a substrate. It is concluded that the developed enzymatic biosensor is perspective for its clinical application for the determination of urea in blood and that the proposed method to prepare a selective biological membrane may be in a simple way included in integral technology of the semiconductor transducer manufacturing.