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1.
Resistivity-temperature characteristics of sol gel YBa2Cu3Oy samples synthesized in flowing oxygen atmosphere 下载免费PDF全文
The relationship of resistivity versus synthesizing temperature of sol gel YBa_2Cu_3O_y samples was studied when prepared under flowing oxygen conditions. A set of high-temperature ρ-T curves was obtained for the whole process. After the sample finished the test measuring, its resistivity was ρ_{300}=9.83×10^{-3 }Ω·cm at room temperature. The ρ-T curve also showed that the orthorhombic-tetragonal phase transformation of sol-gel YBa_2Cu_3O_y sample occurred at 581℃ for the sample in the rising temperature process, but at 613℃ in the cooling process, lower than that of the samples made by using the conventional powder metallurgy methods. 相似文献
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We study a GI/M/c type queueing system with vacations in which all servers take vacations together when the system becomes empty. These servers keep taking synchronous vacations until they find waiting customers in the system at a vacation completion instant.The vacation time is a phase-type (PH) distributed random variable. Using embedded Markov chain modeling and the matrix geometric solution methods, we obtain explicit expressions for the stationary probability distributions of the queue length at arrivals and the waiting time. To compare the vacation model with the classical GI/M/c queue without vacations, we prove conditional stochastic decomposition properties for the queue length and the waiting time when all servers are busy. Our model is a generalization of several previous studies. 相似文献
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Yuri Vlasov 《Mikrochimica acta》1991,104(1-6):363-377
MOSFET-sensors can be considered as membrane-oxide-semiconductor field-effect transistors. MOSFETs can be divided into ISFETs, GasFETs, BioFETs, these sensors being sensitive to ion, gas, biomolecules respectively and there is also a possibility to fabricate MOSFET reference electrode (RefFET). The development and theoretical treatment of various type of MOSFET-sensors are presented in this paper. 相似文献
5.
研究了水-乙腈混合溶液中SO4●-自由基氧化酪氨酸的反应.实验结果表明,SO4●-自由基氧化酪氨酸的反应机制不因乙腈的加入而改变,但所产生的瞬态粒子的动力学行为受到较大影响.随介质中乙腈体积分数的增加,SO4●-的衰变速率减慢而酪氨酸中性自由基(TyrO●)的衰变速率加快.我们认为这两种自由基所呈现出来的相反的溶剂效应是由于其所带电荷的不同.随介质中乙腈体积分数的增加,SO4●-氧化酪氨酸的反应速率减慢.这一实验结果意味着,在有机溶剂存在的情况下TyrO●/ TyrOH的氧化还原电势可能发生了变化,从而旁证了关于TyrO●/ TyrOH的氧化还原电势因酪氨酸从游离状态变到肽或蛋白质中而发生变化的推测. 相似文献
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利用X-射线衍射,扫描电镜,拉曼光谱,等离子发射光谱和比表面测定等方法研究了不同状态下失活及新鲜催化剂的结构,杂种类及含量。结果表明,超温使催化剂晶化明显,制备方法对催化剂结构有直接影响,再生使其强度降低,条形催化剂比较容易粉化,无机杂质是次要的失活原因。 相似文献
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Thu Zar Ma Ma Moe Min Sonwit Phanabamrung Woraphan Chaisriratanakul Apirak Pankiew Awirut Srisuwan Kondee Chauyrod Cholatip Pongskul Chamras Promptmas Chanvit Leelayuwat 《Molecules (Basel, Switzerland)》2022,27(19)
This work demonstrates the ability of the Ion-Sensitive Field-Effect Transistor (ISFET)-based immunosensor to detect antibodies against the human leukocyte antigen (HLA) and the major histocompatibility complex class-I-related chain A (MICA). The sensing membrane of the ISFET devices was modified and functionalized using an APTES-GA strategy. Surface properties, including wettability, surface thickness, and surface topology, were assessed in each module of the modification process. The optimal concentrations of HLA and MICA proteins for the immobilization were 10 and 50 μg/mL. The dose-response curve showed a detection range of 1.98–40 µg/mL for anti-HLA and 5.17–40 µg/mL for anti-MICA. The analytical precision (%CV) was found to be 10.69% and 8.92% for anti-HLA and -MICA, respectively. Moreover, the electrical signal obtained from the irrelevant antibody was considerably different from that of the specific antibodies, indicating the specific binding of the relevant antibodies without noise interference. The sensitivity and specificity in the experimental setting were established for both antibodies (anti-HLA: sensitivity = 80.00%, specificity = 86.36%; anti-MICA: sensitivity = 86.67%, specificity = 88.89%). Our data reveal the potential of applying the ISFET-based immunosensor to the detection of relevant anti-HLA and -MICA antibodies, especially in the field of kidney transplantation. 相似文献
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Haojie Zhang Dirk J. Hagen Xiaopeng Li Andreas Graff Frank Heyroth Bodo Fuhrmann Ilya Kostanovskiy Stefan L. Schweizer Francesco Caddeo A. Wouter Maijenburg Stuart Parkin Ralf B. Wehrspohn 《Angewandte Chemie (International ed. in English)》2020,59(39):17172-17176
Transition‐metal phosphides (TMP) prepared by atomic layer deposition (ALD) are reported for the first time. Ultrathin Co‐P films were deposited by using PH3 plasma as the phosphorus source and an extra H2 plasma step to remove excess P in the growing films. The optimized ALD process proceeded by self‐limited layer‐by‐layer growth, and the deposited Co‐P films were highly pure and smooth. The Co‐P films deposited via ALD exhibited better electrochemical and photoelectrochemical hydrogen evolution reaction (HER) activities than similar Co‐P films prepared by the traditional post‐phosphorization method. Moreover, the deposition of ultrathin Co‐P films on periodic trenches was demonstrated, which highlights the broad and promising potential application of this ALD process for a conformal coating of TMP films on complex three‐dimensional (3D) architectures. 相似文献
10.
基于密度泛函理论研究了H2S、HCN、PH3 在FeO(100)表面的吸附行为,其吸附位点主要考虑四个:Fe-top(铁顶位)、O-top(氧顶位)、Hollow(空位)、Bridge(桥位)。结果表明H2S吸附在O-top吸附位点的吸附能最小,为-1.02ev,即在该位点的吸附体系最稳定。当HCN吸附在FeO(100)表面时,各吸附位点的稳定顺序为Hollow>Fe-top>Bridge>O-top。PH3 的最稳定的吸附位点与H2S的一致,为O-top吸附位点,其吸附能为-1.11ev。当H2S吸附在O-top吸附位点时,H2S与FeO(100)表面的电荷转移量最多,说明该吸附构型最稳定,而HCN吸附在FeO(100)表面,在Hollow吸附位点的电荷转移量最多,也即该吸附位点属于最稳定吸附位点。PH3与FeO(100)表面之间的电荷转移量最多的吸附位点与H2S的相同。当H2S和PH3吸附在O-top吸附位点时,吸附后的态密度曲线整体向低能级移动,峰值降低,其吸附结构变得更加稳定。而HCN吸附在Hollow位点时,吸附后的HCN态密度曲线向能量更低的区域移动,吸附体系变得更稳定。 相似文献