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111.
Silver nanospheres (Ag NSs) buffer layers were introduced via a solution casting process to enhance the light absorption in poly (3‐hexylthiophene) (P3HT) and [6,6]‐phenyl‐C61 butyric acid methyl ester (PCBM) bulk heterojunction organic solar cells. These Ag NSs, as surface plasmons, could increase the optical electric field in the photoactive layer whilst simultaneously improving the light scattering. As a result, this buffer layer improves the light absorption of P3HT:PCBM blend and consequently improves the external quantum efficiency (EQE) of organic solar cells. In this work, different sizes of Ag NSs plasmon‐enhanced layer were investigated, with the aim of optimizing the performance of devices. UV‐vis spectrometer measurement demonstrates that the total optical absorption of P3HT:PCBM blend films in the spectral range of 350–650 nm is increased by ~4 and 6% with incorporation of the 20 and 40 nm Ag NSs, respectively. The Jsc was shown to increase by ~21 and 24% for 20 and 40 nm Ag NSs, respectively. This is due to the extra photogenerated excitons by the plasmonic resonance of Ag NSs. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   
112.
We report on the fabrication of Indium Tin Oxide (ITO)-free inverted organic bulk heterojunction (BHJ) photodetectors of poly(3-hexylthiophene) (P3HT): 1-(3-methoxycarbonyl)-propyl-1-1-phenyl-(6,6) C61 (PCBM). The final inverted device structure is Cr/Al/Cr/P3HT:PCBM/poly-3,4-ethylenedioxythiophene:poly-styrenesulfonate (PEDOT:PSS)/Ag (Zimmermann et al., 2009) [1]. The device is top-absorbing with the light entering through the hole contact grid. We have fabricated standard devices with structure ITO/PEDOT:PSS/P3HT:PCBM/LiF/Al in order to carry out a comparison study. Inverted photodetectors show slightly higher quantum efficiency and responsivity compared to standard devices. Frequency responses at different bias voltages were measured showing a maximum −3 dB cut-off frequency of 780 kHz and 700 kHz at −3 V for the standard and inverted structures respectively. Parameters extracted from the fit of a circuital model to the impedance spectroscopy measurements were used to estimate the photodiode cut-off frequency as function of bias.  相似文献   
113.
In an effort to develop hybrid organic solar cells with improved power conversion efficiency (PCE), devices based on poly (3-hexylthiophene) (P3HT):phenyl C61-butyric acid methyl ester (PCBM) active layer and poly (3,4-ethylenedioxythiophene) (PEDOT):poly (styrenesulfonate) (PSS) buffer layers were prepared. A systematic replacement of PCBM was achieved by introducing nanostructured TiO2 (∼15 nm particle size), dissolved separately in chlorobenzene (CB) and 1,2 –dichlorobenzene (DCB), to the (P3HT:PCBM) active layer while keeping a fixed amount for P3HT. To understand the effect of fullerene replacement with the inorganic metal oxide nanoparticles on different properties of resulting devices, a variety of techniques such as Current–Voltage (J–V) characteristics, Field Emission Scanning Electron Microscopy (FESEM), Atomic Force Microscopy (AFM), Ultravoilet-Visible (UV–Vis) Spectrophotometry and External Quantum Efficiency (EQE) were employed. The addition of TiO2 nanoparticles in the active layer improved the power conversion efficiency (PCE) of P3HT:PCBM devices. The addition of TiO2 nanoparticles using CB as solvent enhanced the absorption in visible region and also introduced a red shift in the absorption spectra. A significant increase in EQE was observed for devices with TiO2 nanoparticles in the active layer. Mixing TiO2 also increased the surface roughness of the active layer where TiO2 nanoparticles were found to agglomerate as their concentration increased relative to fullerene derivative. A complete agglomeration of TiO2 was observed in the absence of PCBM.  相似文献   
114.
Solution processed CH3NH3PbIxCl3–x based planar heterojunction perovskite solar cells with power conversion efficiency (PCE) above 14% are reported. The devices benefit from a phenyl-C61-butyric acid methyl ester (PCBM)/ZnO double electron transport layer (ETL) as well as a short air-aging step. The role of the additional ZnO ETL is studied by scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and secondary ions mass spectroscopy (SIMS). Apart from improving the energy level alignment, the ZnO layer blocks the reactions between the metal electrode and perovskite components, increasing the air stability of the device. A crucial step in our processing is a short air-aging step for the device, which significantly increases the device performance by reducing the recombination process. Since the ZnO nanoparticle layer requires no thermal annealing, the maximum temperature to fabricate the device can be kept below 100 °C, making this structure compatible with roll-to-roll processing on plastic films.  相似文献   
115.
《Organic Electronics》2014,15(9):1958-1964
Charge injection processes in polymer: fullerene composite diodes have been investigated for blend films of poly(3-hexylthiophene) (P3HT) and methanofullerene (PCBM) using spectroscopic techniques combined with bias application, termed a device modulation (DM) spectroscopic technique. The voltage dependence of DM signals under the dark condition demonstrates that injection of mobile carriers into P3HT in the blend diode occurs at much lower voltage than that for a P3HT diode, suggesting that the bulk-hetero junction structure of the blend film induces inhomogeneity in the energy level and partly lowers the barrier for carrier injection. Recombination processes of injected P3HT carriers for the blend device in the dark are analyzed by the frequency dependence of DM signals and found to be dominated by bimolecular recombination processes. The DM measurements under illumination demonstrate that, although charge injection under illumination occurs to the same extent as that in the dark condition, some photo-generated charge-transfer states at the interface of P3HT and PCBM are lost on a slow timescale by recombination with injected carriers.  相似文献   
116.
We have investigated charge transport properties of bulk-heterojunction (BH) solar cells in which P3HT (Poly(3-hexylthiophene)) and PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) are used as the active layer, by using the displacement current measurement (DCM) method. In order to investigate the charge transport properties of the BH solar cells, we fabricated a dedicated device that consists of P3HT and PCBM, and used the DCM method to measure the charge distribution of the devices with different composition ratios of P3HT and PCBM. DCM data suggested that a BH film with 50 wt% of PCBM exhibits a preferable charge transport property suited for BH solar cells. We confirmed that the DCM results are consistent with the measured performance of the BH solar cells, indicating that the DCM method is a simple and effective method for optimizing the structure of BH solar cells as well as other electronic devices composed of binary materials.  相似文献   
117.
A new concept to stabilize the morphology of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend through H-bond formation by using a hydroxyl group end-functionalized P3HT (HOC-P3HT-COH) as a compatibilizer is presented. Domain size of the PCBM crystals in the annealed P3HT/PCBM film is diminished with addition of HOC-P3HT-COH. Surface roughness of the P3HT/PCBM film also becomes smoother with addition of HOC-P3HT-COH. Thermal stability of solar cell device is improved significantly through the H-bond formation between HOC-P3HT-COH and PCBM. A high performance and thermal stable polymer solar cell with 4.06% power conversion efficiency under AM1.5G irradiation is fabricated with 5% HOC-P3HT-COH in P3HT/PCBM layer.  相似文献   
118.
Poly (3-hexylthiophene-2, 5-diyl) (P3HT) and its blend with Phenyl-C61-Butyric acid-Methyl-Ester (PCBM) and fullerene (C60) thin films were prepared and their electrical properties for memory applications were studied. Due to doping, a sharp decrease in the resistance for a P3HT:PCBM:C60 device was observed at around 70 °C which makes it useful for thermal switching applications. Addition of C60 to P3HT:PCBM blend gave a high value for RRESET/RSET in thermal switching. For bias switching, threshold voltage reduces to 1.4 V from 25 V with the addition of C60 to P3HT layer.  相似文献   
119.
The in situ morphology change upon thermal annealing in bulk heterojunction blend films of regioregular poly(3‐hexylthiophene) (P3HT) and 1‐(3‐methoxycarbonyl)‐propyl‐1‐phenyl‐(6,6)C61 (PCBM) is measured by a grazing incidence X‐ray diffraction (GIXD) method using a synchrotron radiation source. The results show that the film morphology—including the size and population of P3HT crystallites—abruptly changes at 140 °C between 5 and 30 min and is then stable up to 120 min. This trend is almost in good agreement with the performance change of polymer solar cells fabricated under the same conditions. The certain morphology change after 5 min annealing at 140 °C is assigned to the on‐going thermal transition of P3HT molecules in the presence of PCBM transition. Field‐emission scanning electron microscopy measurements show that the crack‐like surface of blend films becomes smaller after a very short annealing time, but does not change further with increasing annealing time. These findings indicate that the stability of P3HT:PCBM solar cells cannot be secured by short‐time annealing owing to the unsettled morphology, even though the resulting efficiency is high.  相似文献   
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