Non-conventional metallic electrodes for organic field-effect transistors

We study micrometer-sized organic field-effect transistors with either Pd or NiFe metallic electrodes. Neither of these materials is commonly used in organic electronics applications, but they could prove to be particularly advantageous in certain niche applications such as organic spintronics. Using organic semiconductors with different carrier transport characteristics as active layer, namely n-type C60 fullerene and p-type Pentacene, we prove that Pd (NiFe) is a very suitable electrode for p- (n-) type semiconductors. In particular, we characterized devices with channel lengths in the order of the micrometer, a distance which has allowed us to evaluate the electronic behavior in a regime where the interfacial problems become predominant and it is possible to reach elevated longitudinal electric fields. Our experimental results agree well with a simple model based on rigid energy levels.     

The effect of bias light on the spectral responsivity of organic solar cells

The spectral responsivity, S, and the related spectrally resolved photon-to-electron external quantum efficiency, EQE, are standard device characteristics of organic solar cells and can be used to determine the short-circuit current density and power conversion efficiency under standardized test conditions by integrating over the spectral irradiance of the solar emission. However, in organic solar cells S and EQE can change profoundly with light intensity as a result of processes that vary non-linearly with light intensity such as bimolecular recombination of electrons and holes or space charge effects. To determine the S under representative solar light conditions, it is common to use modulated monochromatic light and lock-in detection in combination with simulated solar bias light to bring the cell close to 1 sun equivalent operating conditions. In this paper we demonstrate analytically and experimentally that the S obtained with this method is in fact the differential spectral responsivity, DS, and that the real S and the experimental DS can differ significantly when the solar cells exhibit loss processes that vary non-linearly with light intensity. In these cases the experimental DS will be less than the real S. We propose a new, simple, experimental method to more accurately determine S and EQE under bias illumination. With the new method it is possible to accurately estimate the power conversion efficiency of organic solar cells.     

Flexible thin-film transistors using multistep UV nanoimprint lithography

A multistep imprinting process is presented for the fabrication of a bottom-contact, bottom-gate thin-film transistor (TFT) on poly(ethylene naphthalate) (PEN) foil by patterning all layers of the metal–insulator–metal stack by UV nanoimprint lithography (UV NIL). The flexible TFTs were fabricated on a planarization layer, patterned in a novel way by UV NIL, on a foil reversibly glued to a Si carrier. This planarization step enhances the dimensional stability and flatness of the foil and thus results in a thinner and more homogeneous residual layer. The fabricated TFTs have been electrically characterized as demonstrators of the here developed fully UV NIL-based patterning process on PEN foil, and compared to TFTs made on Si with the same process. TFTs with channel lengths from 5 μm down to 250 nm have been fabricated on Si and PEN foil, showing channel length-dependent charge carrier mobilities, μ, in the range of 0.06–0.92 cm² V⁻¹ s⁻¹ on Si and of 0.16–0.56 cm² V⁻¹ s⁻¹ on PEN foil.     

Modeling of spiking analog neural circuits using organic semiconductor thin film transistors with silicon oxide nitride semiconductor gates

This paper uses the results of the characterization of amorphous semiconductor thin film transistors (TFTs) with the quasi-permanent memory structure referred to as silicon oxide nitride semiconductor (SONOS) gates, to model spiking neural circuits. SONOS gates were fabricated and characterized. In addition, MOSFETs using organic copper phthalocyanine (CuPc) were fabricated with these SONOS gates to demonstrate proof of concept performance. Analog spiking circuits were then modeled using these low performance TFTs to demonstrate the general suitability of organic TFTs in neural circuits. The basic circuit utilizes a standard comparator with charge and discharge circuits. A simple Hebbian learning circuit was added to charge and discharge the SONOS device. The use of these elements allows for the design and fabrication of high-density 3-dimensional circuits that can achieve the interconnect density of biological neural systems.     

Enhanced storage/operation stability of small molecule organic photovoltaics using graphene oxide interfacial layer

Graphene and graphene oxide (GO) have been applied in flexible organic electronic devices with enhanced efficiency of polymeric photovoltaic (OPV) devices. In this work, we demonstrate that storage/operation stability of OPV can be substantially enhanced by spin-coating a GO buffer layer on ITO without any further treatment. With a 2 nm GO buffer layer, the power conversion efficiency (PCE) of a standard copper phthalocyanine (CuPc)/fullerene (C₆₀) based OPV device shows about 30% enhancement from 1.5% to 1.9%. More importantly, while the PCE of the standard device drop to 1/1000 of its original value after 60-days of operation-storage cycles; those of GO-buffered device maintained 84% of initial PCE even after 132-days. Atomic force microscopy studies show that CuPc forms larger crystallites on the GO-buffered ITO substrate leading to better optical absorption and thus photon utilization. Stability enhancement is attributed to the diffusion barrier of the GO layer which slow down diffusion of oxygen species from ITO to the active layers.     

Bottom-contact small-molecule n-type organic field effect transistors achieved via simultaneous modification of electrode and dielectric surfaces

Low-voltage, n-type organic field effect transistors (OFETs) with simultaneously modified bottom-contact (BC) electrodes and dielectric were compared to their top-contact (TC) counterparts. The devices modified with 6-phenoxyhexylphosphonic acid (Ph6PA) self-assembled monolayer (SAM) showed similar performance, morphology, and contact resistance. Electron mobility of C₆₀ devices were 0.212 and 0.320 cm² V⁻¹ s⁻¹ and [6,6]-phenyl-C₆₁-butyric acid methyl ester (PCBM) devices were 0.04 and 0.06 cm² V⁻¹ s⁻¹ for TC and BC devices, respectively. Low contact resistance between 11 and 45 kΩ cm was found regardless of device architecture or n-type semiconductor used. This work shows it is possible to fabricate solution processable low-voltage bottom-contact devices with performance that is similar or better than their top-contact counterparts without the addition of complex and time-consuming processing steps.     

Modeling thin film formation by Ultrasonic Spray method: A case of PEDOT:PSS thin films

Recent improvements in electronic and optoelectronic devices based on solution processable polymers have motivated development of scalable processing techniques like Ultrasonic Spray technique. Including potential for roll to roll fabrication, it has many other strengths. However, with spray coating it can be difficult to prepare films with a smooth surface. Here, we present model for Ultrasonic Spray deposition of thin films, which establish a clear correlation between process parameters and the film formation process, which ultimately decide the structural features of the thin films. Based on the time to cover the spray deposition area by the sprayed droplets and the time for droplet evaporation, a balance parameter has been defined. It provides a mean to determine suitable process parameters for uniform film formation by Ultrasonic Spray method. The model is further modified for the region of higher solution flow rates, where non-uniformity in droplet distribution is introduced. The predictions based on the model have been experimentally verified with thin films of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid (PEDOT:PSS). The method presented here can be used to predict proper deposition parameters for smooth film deposition by Ultrasonic Spray technique. Finally, the effect of film morphology on the sheet resistance of thin films of PEDOT:PSS is also presented.     

All-spray-coated semitransparent inverted organic solar cells: From electron selective to anode layers

We demonstrated an all-solution-processed electron selective layer, active layer and top electrode for large-area inverted organic solar cells. The fabricated devices are semitransparent, fully spray-coated, highly efficient and air-stable, with power efficiencies of 2.41% and 1.0% for cell areas of 0.36 and 15.25 cm², respectively. The shelf life of the cells in air is demonstrated by the ∼80% retention of original cell efficiency after 30 days.     

Cyclopentadithiophene–benzothiadiazole oligomers: Synthesis via direct arylation,X-ray crystallography,optical properties,solution casted field-effect transistor and photovoltaic characteristics

This article reports the synthesis, crystallographic structure and OFET and OPV performance of the conjugated oligomer of cyclopentadithiophene (CPDT) with benzothiadiazole (BT). Synthesis of the oligomer composed of the CPDT-BT-CPDT sequence is accomplished using direct arylation reactions. Theoretical and experimental X-ray single crystallography confirms that two CPDT-BT-CPDT molecules are not entirely disordered, but are actually stacking directly across each other at the central BT units with an intermolecular distance of 3.61 Å, providing valuable insight into the polymer bulk structure. The performance of the oligomer in OFET devices is investigated by fabricating bottom gate top contact devices and demonstrates a hole mobility of 5.0 × 10⁻³ cm² V⁻¹ s⁻¹. OPV devices of the oligomer blended with PC₆₁BM and PC₇₁BM show power conversion efficiency (PCE) of 1.61%. One potential use for the oligomer could be as a sensitiser in a ternary blend with P3HT–PC₆₁BM or PCPDTBT–PC₆₁BM OPVs; the PCE can be relatively increased by 3–9% depending on concentration, primarily as a result of increased short circuit current density.     

Combined alternative electrodes for semi-transparent and ITO-free small molecule organic solar cells

We investigate various electrode combinations of bottom and top contacts for organic photovoltaic (OPV) cells. Silver (Ag), indium tin oxide (ITO), poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and silver nanowires (AgNW) are used as bottom electrodes. As top electrodes, thin silver layers (t-Ag) and free-standing carbon nanotube (f-CNT) sheets are employed. The manufactured zinc phthalocyanine (ZnPc): fullerene C₆₀ small molecule bulk heterojunction OPV cells with different kinds of bottom electrodes show efficiencies of 1.9∼2.2% and 1.1∼1.5%, when comprised of t-Ag and f-CNT top contacts, respectively. We demonstrate alternative electrodes beyond ITO, silver, and aluminum, which can be readily used for organic photovoltaics technology.