含氢非晶碳膜(a-C:H)红外光学特性的研究

采用端部霍尔离子源在硅基底上制备了含氢非晶碳膜（a-C:H）,并测量了4 000~1 500 cm-1的红外透射光谱。基于单层薄膜的透射关系,获得了仅有六个拟合参数的光学常数计算模型。利用该模型,可以同时获得薄膜在宽波段范围内的光学常数和厚度:折射率的最大值为1.94,消光系数的最大值为0.014 9,拟合薄膜厚度为617 nm 。     

微波辅助消解-原子荧光法测定玻璃中的镉砷铅

光学玻璃中的各种元素对玻璃的光学性能有不同的影响。如加入镉可以提高玻璃折射率;砷的引入能增加玻璃的透光度,含铅玻璃具有低成本、高折射性等优点。但是镉、砷、铅均为有毒元素,玻璃加工和处理过程以及毒废弃物的处理都可能引起水、土壤、大气的污染并给人体带来一定的危害     

Sm3+掺杂稀土硼酸盐玻璃的光谱参数计算和荧光光谱分析

制备了具有高效可见荧光发射的Sm3 掺杂稀土硼酸盐(LBLB)玻璃,对玻璃的吸收和荧光光谱展开了测试与分析.根据Judd-Ofelt理论对吸收光谱进行了拟合,求得Sm3 离子的晶场调节参数Ωt=(2,4,6)分别为6.81×10-20,4.43×10-20和2.58×10-20 cm2,并进一步计算出各能级跃迁的谱线强度、自发辐射跃迁概率、辐射寿命和荧光分支比等光谱参数.紫外光激发下,Sm3 掺杂LBLB玻璃发出明亮的橙红色光.激发光谱表明,氩离子激光器是Sm3 掺杂LBLB玻璃有效的激发光源.     

镶嵌有纳米硅的氮化硅薄膜键合特性分析

采用螺旋波等离子体化学气相沉积(HWPCVD)技术制备了非化学计量比的氢化氮化硅薄膜,对所沉积样品及氮气环境中920 ℃退火样品的微观结构及键合特性进行了分析。Raman散射结果表明,薄膜中过量硅以非晶纳米粒子形式存在,退火样品呈现纳米晶硅和氮化硅的镶嵌结构。红外吸收和可见光吸收特性比较结果显示,薄膜样品的微观结构依赖于化学计量比以及退火过程,硅含量较低样品因高的键合氢含量而表现出低的纳米硅表面缺陷态密度;退火过程将引起Si—H和N—H键合密度的减少,因晶态纳米颗粒的形成,退火样品表现出更高的结构无序度。     

波带交换中一种新型的多颗粒光交叉连接结构

随着波分复用(WDM)技术的迅速发展和广泛应用,光网络中交叉连接的规模不断增大,网络结构也越来越复杂.为了降低WDM网络中光域传输和交换的成本,人们提出了波带交换(WBS)技术,并对此进行了大量的研究.文章介绍了部分WBS和多颗粒光交叉连接(MG-OXC)的基本概念,并提出了一种新型的MG-OXC结构.     

Enhanced-performance relative humidity sensor based on MOF-801 photonic crystals

We proposed an enhanced-performance relative humidity (%RH) nano-sensor based on MOF-801/TiO₂ one-dimensional photonic crystals (1DPC). The maximum reflectance-peak wavelength of it shifted obviously in the range of 20%-90% under varying %RH levels, due to the highly moisture-sensitive MOF-801 film in the 1DPC structure. It was demonstrated that the linear spectrum sensitivity of the MOF-801/TiO₂ %RH 1DPC sensor is exceeding 119 pm/%RH from 20%RH to 90% RH, and the sensitivity of reflection power variations exhibits 1.34 dB/%RH with the resolvable relative humidity variation less than 0.1%RH at 15°C. Meanwhile, the sensor shows a fast optical response time less than 100 ms with exceptional repeatability and reliability, which promises successful measurements of human respiration. Moreover, the sensor performance on the structure of 1DPC is investigated, representing a tradeoff between the sensing sensitivity and response time.     

Tunable electronic and optical properties of SnC/BAs heterostructure by external electric field and vertical strain

Based on the first-principles method, we investigate the electronic structure of SnC/BAs van der Waals (vdW) heterostructure and find that it has an intrinsic type-II band alignment with a direct band gap of 0.22 eV, which favors the separation of photogenerated electron–hole pairs. The band gap can be effectively modulated by applying vertical strain and external electric field, displaying a large alteration of band gap via the strain and experiencing an indirect-to-direct band gap transition. Moreover, the band gap of the heterostructure varies almost linearly with external electric field, and the semiconductor-to-metal transition can be realized in the presence of a strong electric field. The calculated band alignment and the optical absorption reveal that the SnC/BAs heterostructure could present an excellent light-harvesting performance. Our designed heterostructure is expected to have great potential applications in nanoelectronic devices and photovoltaics and optical properties.     

Non-Abelian gauge potentials driven localization transition in quasiperiodic optical lattices

Derived from quantum waves immersed in an Abelian gauge potential, the quasiperiodic Aubry-André-Harper (AAH) model is a simple yet powerful Hamiltonian to study the Anderson localization of ultracold atoms. Here, we investigate the localization properties of ultracold atoms in quasiperiodic optical lattices subject to a non-Abelian gauge potential, which are depicted by non-Abelian AAH models. We identify that the non-Abelian AAH models can bear the self-duality. We analyze the localization of such non-Abelian self-dual optical lattices, revealing a rich phase diagram driven by the non-Abelian gauge potential involved: a transition from a pure delocalization phase, then to coexistence phases, and finally to a pure localization phase. This is in stark contrast to the Abelian counterpart that does not support the coexistence phases. Our results establish the connection between localization and gauge symmetry, and thus comprise a new insight on the fundamental aspects of localization in quasiperiodic systems, from the perspective of non-Abelian gauge potential.     

La单掺4H-SiC电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及La掺杂4H-SiC的电子结构和光学性质进行理论计算。计算结果表明,未掺杂4C-SiC其禁带宽度为2.257 eV。La掺杂后带隙宽度下降为1.1143eV,导带最低点为G点,价带最高点为F点,是P型间接半导体。掺杂La原子在价带的低能区间贡献比较大,而对价带的高能区和导带的贡献比较小。未掺杂4H-SiC在光子能量为6.25 eV时,出现一个介电峰,这是由于价带电子向导带电子跃迁产生。而La掺杂后,出现3个介电峰,分别对应的光子能量为0.47eV、2.67eV、6.21eV,前两个介电峰是由于价带电子向杂质能级跃迁产生,第三个介电峰是由于价带电子向导带电子跃迁产生。La掺杂后4H-SiC变成负介电半导体材料。未掺杂4h-SiC的静态介电常数为2.01,La掺杂的静态常数为12.01。     

Ce掺杂6H-SiC电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及Ce掺杂6H-SiC的电子结构和光学性质进行理论计算.计算结果表明,未掺杂6H-SiC是间接带隙半导体,其禁带宽度为2.045 eV,掺杂Ce元素,带隙宽度下降为0.812 eV.未掺杂6H-SiC在价带的低能区,Si-3s、C-2s电子轨道对态密度的贡献较大,在价带的高能区,主要是由Si-3p、Si-3s、C-2p态组成.掺杂后Ce原子的4f轨道主要贡献在导带部分,掺杂后电导率提高.未掺杂时,只有一个介电峰,是价带电子跃迁到导带电子所致,掺杂后有两个介电峰,第一个介电峰是由于导带电子跃迁到Ce原子4f轨道上产生,第二个峰是价带电子向导带电子跃迁产生.未掺杂6H-SiC,在能量为10.31 eV处吸收系数达到最大值,掺杂后在能量为6.57 eV处,吸收系数达到最大值.