双原子正方晶格光子晶体边界模式的光传输特性

利用平面波展开法,发现双原子正方晶格光子晶体中ΓM方向边界面存在着快慢两类边界模式,并且通过计算色散关系和电场分布研究了边界参量对这两类边界模式传输特性的影响.依据两种模式的色散关系,计算了群指数和群速度色散参量,结果表明边界参量的变化对第一类边界模式传输特性的影响较小,该模式的平均群指数始终维持在5.0左右;第二类边界模式与第一类模式明显不同,边界参量的变化能够有效地影响到这种模式的传输特性,该模式的最大平均群指数可达178左右.利用时域有限差分法记录了不同时刻电场强度在边界附近的分布及监测点处的电场幅度变化情况,结果表明,两类模式都能够被限制在边界附近并向前传播,时域有限差分法得到的群速度与平面波展开法的结果完全吻合.     

基于U型弯曲光纤模间干涉的折射率传感

研究了去包层U型弯曲光纤的折射率传感特性.首先根据模间干涉理论,分析了U型光纤传感器的传感原理,指出干涉谱损耗峰波长与环境折射率和弯曲半径有关.利用单模光纤(SM-28)实验制作不同曲率半径的U型光纤传感器,把传感器的U型部分浸入不同折射率的液体中,研究其折射率传感特性.当U型光纤曲率半径为2.5~5.0mm时,传输光谱中均能观察到明显的模间干涉现象;当液体折射率从1.30RIU变到1.43RIU时,光谱损耗峰波长发生红移,且弯曲半径越大,折射率传感灵敏度越高;在曲率半径为5mm时灵敏度为207nm/RIU(折射率1.30~1.40RIU)和1 220nm/RIU(折射率1.40~1.42RIU).干涉峰的波形参量(半高宽、对比度)决定于包层模和纤芯导模之间的比例,当曲率半径为4mm时,损耗峰半高宽最小达3.2nm.综合半高宽和灵敏度两个参量,得出曲率半径4.5mm的U型光纤传感器品质因素最高,分别为43.1RIU-1(折射率1.30~1.40RIU)和191.2RIU-1(折射率1.40~1.42RIU),可直接由SM-28单模光纤制成,且制作工艺简单、成本低、机械强度高不需要任何特殊处理,具有很好的应用前景.     

基于瑞利-索末菲积分的大衍射角衍射光学元件设计方法

针对现有的衍射光学元件设计方法只适用于小角度衍射的情况,本文提出了一种基于瑞利-索末菲衍射积分的设计方法,可以用来设计具有大衍射角的衍射光学元件。先对目标光场进行坐标变换和强度调整,再利用改进的Gerchberg-Saxton算法优化得到衍射光学元件的相位分布。分别采用本文方法和原有的基于夫琅禾费衍射积分的方法设计衍射光学元件实现线条结构光和不同角度方框图形的光场重构,结果表明:原有的设计方法只适用于衍射角全角小于25°的情况,当衍射角大于25°时,重构光场会出现显著的枕形畸变和不均匀的强度分布。而本文方法在小角度和大角度衍射下都能重构出准确的衍射角和较为均匀的强度分布.     

GaAs pyramidal quantum dot coupled to wetting layer in an AlGaAs matrix: A strain-free system

In this contribution, the electronic and linear and nonlinear optical properties of pyramid-shaped GaAs quantum dots (QDs) coupled to wetting layer (WL) in an Al_0.3Ga_0.7As matrix have been investigated. This nanostructure is relaxed from strain effects due to very small lattice-mismatching. Three transitions of P-to-S, WL-to-P, and WL-to-S were considered and the corresponding transition dipole moments, oscillator strengths, and linear and nonlinear optical properties regarding to these transitions were investigated as a function of the QD height. The results showed that for P-to-S transition, which is a purely in-plane-polarized transition, the dependence of electronic and optical properties on the size is moderate and can be neglected. But for WL-to-P and WL-to-S transitions, which are in-plane- and z-polarized transitions, respectively, the electronic as well as optical properties are strongly size-dependent. Furthermore, a competition between WL-to-S and WL-to-P transitions was observed when the QD size changed.     

Influence of Al-doped ZnO and Ga-doped ZnO substrates on third harmonic generation of gold nanoparticles

Principal role of substrate types on the nonlinear optical properties of Au NP was investigated. Third harmonic generation (THG) studies were carried out for Au NP deposited on the Al-doped ZnO (AuNP/AZO) and Ga-doped ZnO (AuNP/GZO) substrates at fundamental wavelength of 20 ns Er:glass laser (generating at 1540 nm wavelength) during photostimulation by the 532 nm 15 ns laser pulses. Sizes of Au NP were 5 nm, 10 nm, 20 nm, and 30 nm. The output signal was registered at 513 nm. The photoinduced power density was increased from 0 up to 800 MW/cm². So in our work we explore the role of the substrate on the optically stimulated non-linear optical properties during simultaneous photo stimulation near the inter-band transition. The results were studied depending on the type of substrate and the sizes of the deposited nanoparticles. The analysis was done within a framework of interaction between the photoinduced light and SPR wavelengths. Control of the photoinduced temperature was done.     

Defect induced paramagnetism in lightly doped ZnS:Fe nanoparticles

Nanoparticles of ZnS:Fe (0, 1, 3, and 5 at%) were synthesized by a refluxing route at 80 °C. All the samples exhibited cubic structure as revealed by X-ray powder diffraction studies. Blue emission of undoped samples was totally quenched by Fe doping. Magnetic measurements showed that the undoped ZnS was diamagnetic whereas all the doped samples were paramagnetic at room temperature. EPR signal characteristic of Fe³⁺ was observed in all the doped samples at room temperature. The paramagnetism of the present samples is attributed to the presence of uncoupled Fe³⁺ ions mediated by cation vacancies.     

Anisotropic optical conductivity and electron–hole asymmetry in doped monolayer graphene in the presence of the Rashba coupling

In this study, the optical conductivity of substitutionary doped graphene is investigated in the presence of the Rashba spin orbit coupling (RSOC). Calculations have been performed within the coherent potential approximation (CPA) beyond the Dirac cone approximation. Results of the current study demonstrate that the optical conductivity is increased by increasing the RSOC strength. Meanwhile it was observed that the anisotropy of the band energy results in a considerable anisotropic optical conductivity (AOC) in monolayer graphene. The sign and magnitude of this anisotropic conductivity was shown to be controlled by the external field frequency. It was also shown that the Rashba interaction results in electron–hole asymmetry in monolayer graphene.     

Effect of oblique incidence angle of sunlight on the optimized folding angle of V-shaped organic solar cells

We numerically investigate the effect of the incidence angle of sunlight on the optimized folding angle of V-shaped organic solar cells (VOSCs) to obtain the best power conversion efficiency in a realistically operating environment. The light absorbance at the active layer is calculated based on the finite element method with respect to the incidence angle of sunlight and the folding angle of the VOSC. We calculate the generation energy density per day at each folding angle by integrating the angular response of the short-circuit current and the open-circuit voltage with the consideration of the variation of the incidence angle during daytime. We show that the optimized folding angle of the VOSC based on the variation of the generation energy density per day is close to that determined from the variation of the electric power density in normal incidence, which has been widely used to optimize the folding angle of VOSCs.     

Frequency ratios of Sr,Yb, and Hg based optical lattice clocks and their applications

This article describes the recent progress of optical lattice clocks with neutral strontium (⁸⁷Sr), ytterbium (¹⁷¹Yb) and mercury (¹⁹⁹Hg) atoms. In particular, we present frequency comparison between the clocks locally via an optical frequency comb and between two Sr clocks at remote sites using a phase-stabilized fibre link. We first review cryogenic Sr optical lattice clocks that reduce the room-temperature blackbody radiation shift by two orders of magnitude and serve as a reference in the following clock comparisons. Similar physical properties of Sr and Yb atoms, such as transition wavelengths and vapour pressure, have allowed our development of a compatible clock for both species. A cryogenic Yb clock is evaluated by referencing a Sr clock. We also report on an Hg clock, which shows one order of magnitude less sensitivity to blackbody radiation, while its large nuclear charge makes the clock sensitive to the variation of fine-structure constant. Connecting all three types of clocks by an optical frequency comb, the ratios of the clock frequencies are determined with uncertainties smaller than possible through absolute frequency measurements. Finally, we describe a synchronous frequency comparison between two Sr-based remote clocks over a distance of 15 km between RIKEN and the University of Tokyo, as a step towards relativistic geodesy.     

Optical constants,dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

BiVO₄ thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO₄ target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO₄ target material was prepared through solid-state reaction method by heating Bi₂O₃ and V₂O₅ mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV–Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO₄ thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO₄ thin films have been investigated in detail. Dielectric properties of the BiVO₄ thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO₄ thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO₄.