MPNIM结构光致变电容效应

本文报告了作者之一首先发现的MPNIM(金属-P型半导体-N型半月比-绝缘体-金属)结构的光致变电容效应。基于该效应已研制出新器件:半导体双向光控变容器.新器件的电容值与入射光强的关系,光谱响应特性,频率特性,C-V特性,温度特性已被研究.     

2.5Gb/s光外调制器及驱动器

文章对光外调制作了原理及实验上的分析,着重研究作为驱动器的大功率宽带放大器。对２．５Ｇｂ／ｓＮＲＺ伪随机码对放大器的低端截止频率和高端截止频率的要求进行了理论分析。提出并实验了几种放大器高频补偿技术,取得了好的效果。为满足输入输出阻抗为５０Ω的要求采用了共面波导计算方法,以确定印刷电路板导线尺寸。最后对光外调制器输出波形进行了测试。     

特柔软型钢丝铠装复合电缆设计探讨

本文主要探讨特柔软型钢丝铠装复合电缆的设计,根据特殊用户实际应用情况,设计出大拉力、超柔软钢丝铠装电缆,设计过程中不仅考虑电缆所应有的电性能,同时还要考虑电缆高强度抗张情况和应用中处于反复收放状态,而且所设计的电缆还要满足恶劣环境.     

高分辨率显示屏特性分析用光学透镜设计

描述了高分率显示屏特性分析用的光学透镜的特点和设计要求。分析了调焦镜头和镜头位置调节两种结构的优缺点，推导了屏厚变化（即物距变化）对测量精度影响的表达式。给出了设计实例。实验测量结果与理论分析基本上一致。     

强激光装置中玻璃疵病在线检测的光学系统设计

介绍了一种用于玻璃疵病在线检测的近摄工作距成像光学系统,其光组结构形式采用了光阑后置的准远心结构形式,主要光学参量为f′=14 mm;在物像距为250 mm约束条件下,物方视场达到90 mm（对角线）;F/number=3.56;光谱适应范围为400~800 nm,对应的空间分辨率为100 lp/mm时,调制传递函数大于0.29.     

Doping profiles from the capacity-voltage (C–V) characteristics of the [111] Si(p) single crystals doped by the In+ -ion-implantation

The ²³⁵U(n, f) cross-section has been measured after the installation of a liquid nitrogen cooled methane moderator at GELINA. The results are compared with previous data, and the influence of the cross section shape on the Westcott gf-factor is discussed.     

Radiation background due to radioactive sources in a luminescence dating laboratory

For practical reasons, usually, luminescence dating laboratories contain in the same room (or in adjacent rooms) the equipment and the radioactive sources, as well as the storage cabinet for the samples. It is generally assumed that the absorbed dose due to ambient radioactivity is null or at least negligible in terms of human health (below the dose limit).To test the actual dose rate inside our laboratory room, an investigation combining portable dose rate meter, portable NaI(Tl) gamma spectrometry, and blue-OSL dosimetry using Al₂O₃:C pellets was made. Although our measurements show the presence of X-rays as far as 3 m from the sources, the dose rates are below the safety regulation and does not affect the dating of the sample stored in the same room as the radioactive sources.     

Raman spectroscopic study on classification of cervical cell specimens

Cervix-cancer is the third most common female cancer worldwide. Papanicolaou (Pap) test, a well-recognized screening tool, is labor intensive, time consuming and prone to subjective interpretations. Optical spectroscopic methods, sensitive to molecular changes are being pursued as potential diagnostics tool. In this study we have explored Raman spectroscopic approach to differentiate exfoliated cell pellets using 94 cervical cell specimens (45-normal and 49-abnormal specimens). Study was carried out by two approaches. In the first approach, spectral data from 37 cell specimens were acquired and analyzed by Principal Component-Linear Discriminant Analysis (PC-LDA), which yielded classification efficiencies of 86% and 84% for normal and abnormal specimens, respectively. Mean and difference spectra suggest presence of blood in abnormal specimen as a major cause of discrimination. However, as tumor is vascular, bleeding was observed during abnormal sample collection. Hence, spectra of abnormal specimens show heme and fibrin features, and this can lead to false interpretations, as bleeding also occur in several non-cancerous conditions. Therefore, remaining 57 specimens were treated with Red Blood Corpuscles (RBC) lysis buffer in order to remove the RBC influence. PC-LDA resulted classification efficiency of about 79% and 78% for normal and abnormal smear, respectively – comparable to Pap test. Thus finding of the study suggests feasibility of Raman spectroscopic classification of normal and cancerous exfoliated cervical cell specimens.     

PbS/CoS–Pani composite semiconductor films

The synthesis and characterization of polyaniline (Pani) films embedded with PbS/CoS core–shell, having semiconductor characteristics are reported in this study. Mn²⁺ doped, PVA capped PbS/CoS core-shell particles dispersed in Pani matrix served as photoluminescent boosters. The absorption intensity of the core-shell particles–Pani hybrid increased significantly with wide spectrum response and hypsochromic effect. The Mott–Schottky plot showed a negative slope for PbS/CoS-Pani film, indicating typical p-type semiconductivity. The Tauc plot for PbS/CoS-Pani film revealed the direct transition type with a band gap of 2.36 eV. Solid state photovoltaic cells have been fabricated with PbS/CoS-Pani as the hole conductor. The cells show photocurrent of 0.93 mA/cm², voltage of 432 mV and energy conversion efficiency of 0.93%. The scanning electron micrograph revealed periodic arrangement in the polymer matrix. This arrangement of the core-shell particles in the continuous polymer matrix with high carrier density promises this material for the photoelectrochemical applications.     

The Semiquantitative Determination of Impurities in High-Purity Molybdenum Metal by Optical Emission Spectrography

Abstract

A method is reported for the determination of Ni, Co, Bi, Al, V, Ti, Cu, Si, Pb, Cr, Mg, Sn, and Fe in molybdenum metal by optical emission spectrography. The procedure consists of dissolving the metal in HNO₃ and HCl, evaporating to dryness, and igniting at 500–550°C to MoO₃. The MoO₃ is mixed with an equal weight of GeO₂, which acts as an inert collector, and ignited at 700–750°C to volatilize the MoO₃. This double ignition method concentrates the impurities on the GeO₂ thereby placing the trace elements within the range of the spectrograph. The residue is excited in a d c are at 10 amps and the spectra are recorded on a photographic emulsion.