几类数列通项的矩阵求法

本利用矩阵给出了几类数列的通项公式的求法，把数列通项公式的求法转化为矩阵幂的计算，思路简单、计算简便，并能判别其敛散性。     

Linear Ramsey numbers of sparse graphs

The Ramsey number R(G₁,G₂) of two graphs G₁ and G₂ is the least integer p so that either a graph G of order p contains a copy of G₁ or its complement G^c contains a copy of G₂. In 1973, Burr and Erd?s offered a total of $25 for settling the conjecture that there is a constant c = c(d) so that R(G,G)≤ c|V(G)| for all d‐degenerate graphs G, i.e., the Ramsey numbers grow linearly for d‐degenerate graphs. We show in this paper that the Ramsey numbers grow linearly for degenerate graphs versus some sparser graphs, arrangeable graphs, and crowns for example. This implies that the Ramsey numbers grow linearly for degenerate graphs versus graphs with bounded maximum degree, planar graphs, or graphs without containing any topological minor of a fixed clique, etc. © 2005 Wiley Periodicals, Inc. J Graph Theory     

一种微通道换热器的设计与分析(英文)

设计了一种用来测试微通道换热性能的实验装置。该系统由微通道换热器、模拟热源、微型水泵、连通管、测试三通及其它测试元件构成。通过检测温度、压力和流量等参数能够得到微通道的传热和摩阻参数。针对该实验装置,对微通道中流体的压降和传热分别进行分析和研究。实验表明,当微通道水力直径为381μm时,宏观理论公式已不适用于微通道摩阻及其换热的计算。此时,微通道的摩阻比宏观理论计算值小31.6%～41.9%;微通道结构具有良好的换热性能,其Nu可达9.2。     

Irradiation Defects in Silicon Crystal

The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.     

无原子布氏代数理论的计算复杂性

研究无原子布氏代数的计算复杂性 .得到了下面的新定理 :定理 1　无原子布氏代数理论Δ具有完全的量词消去法 ,也就是说每一个式子都Δ等价于一个开式子 .定理 2　无原子布氏代数的初等型Γ (x1,… ,xn)是由型内的不含量词的全体开式子所唯一决定 .定理 3　无原子布氏代数的一个长度为 n的语句的判断过程所消耗的 Turing时间和空间都是属于 2 2 cn指数级 .     

电信号码编排的建议——使用电话名

介绍了电话名的概念 ,并主要针对电话名系统的实现、应用及前景做了相应的分析     

一种简易的手工网印序号工艺法

通过一种简易的手工丝印序号工艺法,可以连续完成逐张PCB的序号印制且质量稳定。     

一些包含Lucas数的恒等式

利用第一类Chebyshev多项式的性质以及其与Lucas数的关系得到了关于Lucas数立方的一些恒等式.     

Maximal σ‐polynomials of connected 3‐chromatic graphs

In the set of graphs of order n and chromatic number k the following partial order relation is defined. One says that a graph G is less than a graph H if c_i(G) ≤ c_i(H) holds for every i, k ≤ i ≤ n and at least one inequality is strict, where c_i(G) denotes the number of i‐color partitions of G. In this paper the first ? n/2 ? levels of the diagram of the partially ordered set of connected 3‐chromatic graphs of order n are described. © 2003 Wiley Periodicals, Inc. J Graph Theory 43: 210–222, 2003     

一个素变数丢番图不等式

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