Charge storage and memory effect in graphene quantum dots – PEG600 hybrid nanocomposite

We report an easy, one step, low cost method to obtain a hybrid composite material consisting in graphene quantum dots (GQDs) embedded in a polymeric – poly(ethylene glycol) bis (carboxymethyl) ether – matrix. Optical measurements show the excitation wavelength dependent photoluminescence of the GQDs – PEG₆₀₀. In comparison with self-passivated GQDs, the composite exhibits a blue shifted photoluminescence, as well as additional emission peaks in the range of 570–600 nm. These features are explained by the presence of new electronic surface states induced by the polymeric matrix as it was demonstrated by the electrochemical measurements. The transport properties consist in a large clockwise hysteresis presenting high and low resistance states, also two distinctive regions of negative differential resistance. The photocurrent decay and the transient currents indicate a large charge storage and confirm the existence of trap charge levels. The experimental findings suggest that the leading mechanism underling the transport is Simmons Verderber. We demonstrated the switching properties of GQDs – PEG₆₀₀ for applications in non-volatile memory by performing standard sequence memory tests.     

Porous shape memory polymers: Design and applications

Porous shape memory polymers (SMPs) exhibit geometric and volumetric shape change when actuated by an external stimulus and can be fabricated as foams, scaffolds, meshes, and other polymeric substrates that possess porous three-dimensional macrostructures. These materials have applications in multiple industries such as textiles, biomedical devices, tissue engineering, and aerospace. This review article examines recent developments in porous SMPs, with a focus on fabrication methods, methods of characterization, modes of actuation, and applications. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 1300–1318     

Temperature memory effect and its stability revealed via differential scanning calorimetry in ethylene‐vinyl acetate within glass transition range

In this article, we reveal the temperature memory effect (TME) in a commercial thermoplastic polymer, namely ethylene‐vinyl acetate (EVA), within its glass transition range via a series of differential scanning calorimeter (DSC) tests. In addition, we investigate the influence of heating holding time and also compare the observed TME in current study with that of shape memory alloys (SMAs). It is concluded that the TME via DSC (without any macroscopic shape change) is achievable within the glass transition range of a polymer. Conversely, although the observed TME shares the many similar features as those in SMAs, due to the nature of micro‐Brownian motion in the glass transition of polymers, the resulted TME is strongly affected by the heating holding time. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 1731–1737     

碳纳米管制备蓝光石墨烯量子点及其在柔性有机存储器上的应用

通过化学裁剪法打开碳纳米管获得了粒径一致、性能稳定、具有蓝色荧光的石墨烯量子点。该方法属于化学溶液法，具有成本低廉、工艺简单、条件易控等优势。将该样品与半导体聚合物按一定比例混溶，通过旋涂技术形成基于石墨烯量子点掺杂的聚合物复合薄膜，进而制成柔性存储器。该柔性可弯曲存储器具有低驱动电压、接近10³的ON/OFF 比率、较好的循环次数，较好的重复性和稳定性。该研究结果为柔性有机存储器领域的研究展开了新的方向。     

Experiment on relationship between the magnetic gradient of low-carbon steel and its stress

In geomagnetic field, a series of tensile experiments on the low-carbon steel sticks were carried out. A special homemade detector was used to measure the magnetic gradient on the material surface. The results showed that the relationship between the magnetic gradient and the stress varied with different conditions of measurement. There was no obvious correlation between the magnetic gradient and the tensile stress if the sample remained on the material test machine. If the sample was taken off from the machine, the measured magnetic gradient was linear with the prior maximum stress. In Nanjing, PR China, a place of 32°N latitude, the slope of the linear relationship was about 67 (uT/m)/MPa. This offered a new method of non-destructive stress testing by measuring the magnetic gradient on the ferromagnetic component surface. The prior maximum applied stress of the sample could be tested by measuring the present surface magnetic gradient. Actually this phenomenon was the metal magnetic memory (MMM). The magnetic gradient near the stress concentration zone of the sample, the necking point, was much larger than other area. Thus, the hidden damage in the ferromagnetic component could be detected early by measuring the magnetic gradient distribution on its surface. In addition, the magnetic memory signal gradually weakened as the sample was taken off and laid aside. Therefore, it was effective for a given period of time to detect the stress or stress concentration based on the MMM testing.     

Crystallization kinetics of Sn40Se60 thin films for phase change memory applications

The crystallization kinetics of Sn₄₀Se₆₀ thin films has been successfully investigated using sheet resistance versus temperature measurements. Thermal evaporation was used to deposit the films on ordinary glass substrates. The crystallization temperature for Sn₄₀Se₆₀ thin film was found to be 156.6 ± 0.3 ℃. In the as-deposited state, the sheet resistance was found to be 195 MΩ, this value declined to 1560 Ω/口 upon annealing. The value of activation energy obtained from the Kissinger plot was 0.62 ± 0.07 eV. From the results obtained, Sn₄₀Se₆₀ is a promising alloy for PCM application because of its high electrical contrast, high crystallization temperature, and relatively high activation energy.     

一种接触质量高和兼容特性好的金属-量子点-金属结构的自对准制备方法

我们报道了一种“金属-量子点-金属”结构的自对准制备方法。该方法主要包括“电子束曝光-薄膜淀积-刻蚀”工艺,具有套刻容限大、开发周期短以及可兼容多种材料等优点,尤其适用于具有类似结构的纳米器件制备。该方法中使用的牺牲层工艺和强化版图,降低了剥离工艺的难度,提升了可制备器件结构的力学强度。最后,作为应用实例,我们用该方法制备了尺寸为 255 nm × 45 nm × 30 nm（ 长 × 宽 × 高)的相变节点。     

基于反射内存网的红外导引头测试系统通信技术

针对武器装备的半实物仿真测试系统对实时通信的需求,提出了一种基于反射内存通信网络实现的红外空空导弹导引头动态测试系统,并给出了测试系统的组成、工作原理、软件设计方案和具体实现途径。在对反射内存网络原理深入分析的基础上,搭建了基于该红外导引头测试系统的物理平台,并对关键指标进行严格测试。测试结果表明,反射内存网络可以很好的适应半实物红外导引头测试系统对网络通信的强实时性、低迟延、高速率等各方面不断增长的要求。     

基于对象引用关系的Java程序内存行为分析方法

本文提出一种基于对象引用关系的Java程序内存行为分析方法.与传统的通过内存消耗的大小来确定程序中数据结构的重要性并分析相关内存行为的方法不同,本文方法同时考虑内存消耗和内存支配两个因素来确定一个数据结构在程序内存行为中的重要性,通过研究数据结构之间在内存使用上的支配关系和对数据结构进行引用分析,得到程序中重要的内存行为.实验结果表明该方法能有效地分析程序的内存行为,且对比其它方法能提供更加准确的内存行为分析结果.