具有控制项的限定记忆卡尔曼滤波器

在已有的限定记忆卡尔曼滤波器的基础上 ,将确定性先验信息作为控制项加以应用 ,推导出了完整的限定记忆卡尔曼滤波公式 ,从而在记忆长度确定的情况下 ,有效地减小了模型不准的误差 ,降低了滤波总误差。仿真同样表明了该方法的有效性     

Mixed Mode VLSI Implementation of a Neural Associative Memory

A mixed mode digital/analog special purpose VLSI hardware implementation of an associative memory with neural architecture is presented. The memory concept is based on a matrix architecture with binary storage elements holding the connection weights. To enhance the processing speed analog circuit techniques are applied to implement the algorithm for the association. To keep the memory density as high as possible two design strategies are considered. First, the number of transistors per storage element is kept to a minimum. In this paper a circuit technique that uses a single 6-transistor cell for weight storage and analog signal processing is proposed. Second, the device precision has been chosen to a moderate level to save area as much as possible. Since device mismatch limits the performance of analog circuits, the impact of device precision on the circuit performance is explicitly discussed. It is shown that the device precision limits the number of rows activated in parallel. Since the input vector as well as the output vector are considered to be sparsely coded it is concluded, that even for large matrices the proposed circuit technique is appropriate and ultra large scale integration with a large number of connection weights is feasible.     

Attractors for a Three-Dimensional Thermo-Mechanical Model of Shape Memory Alloys

Abstract In this note, we consider a Frémond model of shape memory alloys. Let us imagine a piece of a shape memory alloy which is fixed on one part of its boundary, and assume that forcing terms, e.g., heat sources and external stress on the remaining part of its boundary, converge to some time-independent functions, in appropriate senses, as time goes to infinity. Under the above assumption, we shall discuss the asymptotic stability for the dynamical system from the viewpoint of the global attractor. More precisely, we generalize the paper [12] dealing with the one-dimensional case. First, we show the existence of the global attractor for the limiting autonomous dynamical system; then we characterize the asymptotic stability for the non-autonomous case by the limiting global attractor. * Project supported by the MIUR-COFIN 2004 research program on “Mathematical Modelling and Analysis of Free Boundary Problems”.     

A Built-in Self-Test Scheme with Diagnostics Support for Embedded SRAM

In this paper we propose a novel built-in self-test (BIST) design for embedded SRAM cores. Our contribution includes a compact and efficient BIST circuit with diagnosis support and an automatic diagnostic system. The diagnosis module of our BIST circuit can capture the error syndromes as well as fault locations for the purposes of repair and fault/failure analysis. In addition, our design provides programmability for custom March algorithms with lower hardware cost. The combination of the on-line programming mode and diagnostic system dramatically reduces the effort in design debugging and yield enhancement. We have designed and implemented test chips with our BIST design. Experimental results show that the area overhead of the proposed BIST design is only 2.4% for a 128 KB SRAM, and 0.65% for a 2 MB one.     

铁电存储场效应晶体管I-V特性的物理机制模拟

文章讨论的模型主要描述了铁电存储场效应晶体管（FEMFET）的I-V特性。从理论结果可反映出几何尺寸效应和材料参数对晶体管电特性的影响。传统的阈值电压的概念巳不再适用，由于铁电层反偏偶极子的开关作用，自发极化的增加对存储器的工作状态产生很小的影响。该模型可用于设计和工艺参数的优化，并由直观原型的方法得到了验证。     

甲基紫掺杂聚乙烯醇薄膜材料红光多重全息存储

甲基紫掺杂聚乙烯醇薄膜材料在两束相干光照射下生成相位光栅.当改变一束相干光光程,通过监测相位光栅的一级衍射信号强度的变化,可以检测相位光栅的生长和擦除过程.在此实验基础上,讨论了甲基紫掺杂聚乙烯醇薄膜材料多重全息存储的原理与结果.     

中国股市长记忆的修正R/S分析

本文在比较各种长记忆检验方法优缺点的基础上,采用修正的R/S分析检验我国沪深两股市日收益和日绝对收益序列的长记忆性。结果表明在0.05的显著水平下,两股市的日收益序列均无长记忆,但深圳成指日收益序列的记忆长度比上证综指日收益序列的记忆长度长;以日绝对收益序列为代表的波动序列具有较强的长记忆性。     

CaractErisation Par DSC Des Sequences De Transformation Au Cours D'un Chauffage Lent Des Alliages Amf A Base De Cu–Al–Ni

Quenching of the eutectoidal composition of the shape memory alloys (SMA’s) allowed us to display the gradual transition of the martensitic structure as a function of the composition. Indeed, we have verified that for low Al and Ni percentages, the martensite structure obtained is β′, while, for high Al and Ni (Al<13.3 mass%) contents, the martensite structure is essentially of β₁′ type. Elsewhere, we have observed that a nickel addition (<4.3 mass%) operates simultaneously on the composition of the eutectoidal pointand the domain of the different martensitic structures types. During reheating of the quenched structure, the transformation sequences of the martensite to the parent phase (β1), then the decomposition of the later phase into the equilibrium phases, and finally, the redissolution of all phases to form the β phase at high temperature, are rather similar. This revised version was published online in August 2006 with corrections to the Cover Date.     

NiTi形状记忆薄膜的显微结构和力学性能

NiTi形状记忆合金薄膜具有形状记忆效应，极有希望用于制造高技术领域微电子机械系统中的微型激发器。NiTi形状记忆合金薄膜在制备和使用过程中需要高品质（衬）底材。本文利用高分辨电子显微学和高分辨分析电子显微学详细研究了硅底材NiTi形状记忆合金薄膜的NiTi／Si和NiTi／SiO2微结构体系，包括薄膜精细结构和界面反应。也研究了其显微结构和力学性能的关系。特别给出了NiTi形状记忆合金薄膜产生疲劳过程的微观过程的起因，通过高达十万个使用热循环前后样品显微结构变化的比较，发现纳米尺度上的TiNi3新相的形成导致疲劳过程的发生。如何抑制TiNi3新相形成的研究正在进行之中，这将为进一步提高NiTi形状记忆合金的使用寿命指出方向。     

TMS320C67系列EMIF与异步FIFO存储器的接口设计

介绍了TI公司TMS320C67系列DSP的EMIF(外部存储器接口)与异步FIFO(先进先出)存储器的硬件接口设计,着重描述了用EDMA(扩展的直接存储器访问)方式读取FIFO存储器数据的软件设计流程,最后说明了在选择FIFO存储器时应注意的问题.由于EMIF的强大功能,不仅具有很高的数据吞吐率,而且可以与不同类型的同步、异步器件进行无缝连接,使硬件接口电路简单,调试方便.运用EDMA的方式进行数据传输,由EDMA控制器完成DSP存储空间内的数据搬移,这样可以最大限度地节省CPU的资源,提高整个系统的运算速度.