用1／f噪声表征MOSFET的负温偏不稳定性

负温偏不稳定性是ＭＯＳ顺件最重要的可靠问题之一。本文实验上发现ＭＯＳＦＥＴ的Ａ／ｆ噪声与其负温偏不稳定性相关，初始１／ｆ噪声谱密度正比于负温偏应力下的跨导退化量。     

时空域三维结构图象噪声及信噪比测试

微光ＣＣＤ电视系统性能测试是微光成象技术的重要组成部分。本文提出了时空域三维结构图象噪声的测试模型，建立了测试和分析系统，对微光ＣＣＤ电视系统信号和噪声进行测试与分析，并且分别给出了时间域噪声和空间域噪声分布情况的三维曲线。     

低信噪比时混浊信号降噪的微扰方法

该文提出一种新的混沌信号降噪方法——微扰法,并且给出了微扰法的一个具体实例算法——梯度微扰法。该文还对用梯度微扰法进行混沌信号降噪的效果进行了实验研究。实验结果表明,梯度微扰法能够在低信噪比时得到很好的降噪效果。文中还对梯度微扰法的参数选择问题进行了实验研究。     

HFC网络回传通道设计分析及其关键技术

提出HFC网络回传通道设计的可靠性、开放性、扩展性和实用性原则 ,阐明这四大设计原则的准确含义 ,指明正、反向通道设计的异同。分析回传通道设计的 3项关键技术 :控制汇聚噪声 ,实施电平均衡 ,防止回传通道过激励而发生信道阻塞。     

红外探测器噪声的测量

介绍了红外探测器噪声定义、测量方法、测量仪器等，着重分析ＨＰ３５８９Ａ测量噪声的原理，并以实验验证了测量方法的可行性。     

探讨广播电视机房的空调设计与维护管理

主要介绍在广播电视机房的空调设计与管理维护等方面的体会。     

On the limitations of transimpedance amplifiers as tools for low-frequency noise characterization

An experimental set-up for the characterization of low-frequency noise on two terminal devices is reported. The experimental set-up is based on the use of the commercial transimpedance amplifier (TA) EG&G5182. This paper addresses the influence of the TA on the noise characterization process by describing the TA as a non-ideal operational amplifier with a feedback resistor. The impact of the TA finite input resistance and voltage gain is highlighted through comparison with measurements carried out on resistors and diodes.     

A low-complexity low-spurs digital architecture for wideband PLL applications

This paper presents a non-ideality analysis of the wideband frequency synthesizer, and proposes a new digital architecture for signal modulation and quantization. Using error masking strategy, this method can offer smaller routing area and less power consumption without sacrificing any system performance. Simulation results confirm the theoretical predictions. Finally, the design guidelines are derived to fulfill the customized synthesizer specifications.     

Design and analysis of noise margin,write ability and read stability of organic and hybrid 6-T SRAM cell

This paper analyzes SRAM cell designs based on organic and inorganic thin film transistors (TFTs). The performance in terms of static noise margin (SNM), read stability and write ability for all-p organic (Pentacene–Pentacene), organic complementary (Pentacene–C₆₀) and hybrid complementary (Pentacene–ZnO) configurations of SRAM cell is evaluated using benchmarked industry standard Atlas 2-D numerical device simulator. Moreover, the cell behaviour is analyzed at different cell and pull-up ratios. The electrical characteristics and performance parameters of individual TFT used in SRAM cell is verified with reported experimental results. Furthermore, the analytical result for SNM of all-p organic SRAM cell is validated with respect to the simulated result. Besides this, the cell and pull-up ratios of the hybrid and organic SRAM cells are optimized for achieving best performance of read and write operations and thereafter, the results are verified analytically also. The SNM of hybrid cell is almost two times higher than the all-p SRAM, whereas this improvement is just 18% in comparison to the organic memory cell. On the other hand, the organic complementary SRAM cell shows an improvement of 26% and 22% for the read stability in comparison to the all-p organic and hybrid SRAM cells, respectively. Contrastingly, this organic cell demonstrates a reduction of 16% in the SNM and an increment of 76% in write access time in comparison to the hybrid cell. To achieve an overall improved performance, the organic complementary SRAM cell is designed such that the access transistors are pentacene based p-type instead of often used n-type transistor. Favorably, this organic SRAM design shows reasonably lower write access time in comparison to the cell with n-type access OTFTs. Moreover, this cell shows adequate SNM and read stability that too at substantially lower width of p-type access OTFTs.     

采取多种措施抑制电子电路噪声

提出了一种从源头上杜绝噪声的设计方案,介绍了电子产品噪声常规的11种检查方法,并给出了11种抑制噪声的途径.试验结果表明:用以上方法进行消噪,具有操作简单、检测性能高、应用范围广、工作效率高、经济效率好的特性.