排序方式: 共有45条查询结果,搜索用时 5 毫秒
41.
42.
43.
采用15nmNi/1.5nmPt/15nmNi/Si结构在600~850°C范围内经RTP退火的方法形成Ni(Pt)Si薄膜,其薄膜电阻低且均匀一致。比形成较低电阻率的NiSi薄膜的温度提高了150°C。在850°CRTP退火后形成的Ni(Pt)Si/Si肖特基势垒二极管I-V特性很好,其势垒高度ΦB为0.71eV,改善了肖特基二极管的稳定性。实验表明在肖特基二极管中引入深槽结构,可以大幅度地提高其反向击穿电压。在外延层浓度为5E15cm-3时,深槽器件的击穿电压可以达到80V,比保护环器件高约30V。 相似文献
44.
It is reported that the thermal stability of NiSi is improved by employing respectively the addition of a thin interlayer metal (W, Pt, Mo, Zr) within the nickel film. The results show that after rapid thermal annealing (RTA) at temperatures ranging from 650 °C to 800 °C, the sheet resistance of formed ternary silicide Ni(M)Si was less than 3 Ω/□, and its value is also lower than that of pure nickel monosilicide. X-ray diffraction (XRD) and raman spectra results both reveal that only the Ni(M)Si phase exists in these samples, but the high resistance NiSi2 phase does not. Fabricated Ni(M)Si/Si Schottky barrier devices displayed good I-V electrical characteristics, with the barrier height being located generally between 0.65 eV and 0.71 eV, and the reverse breakdown voltage exceeding to 40 V. It shows that four kinds of Ni(M)Si film can be considered as the satisfactory local connection and contact material. 相似文献
45.
Md. Rahman Anisur T. Osipowicz D. Z. Chi W. D. Wang 《Journal of Electronic Materials》2005,34(8):1110-1114
The effects of prolonged annealing (10 h) at low temperature (500°C) have been studied in 20-nm Ni/Si (100) thin films using
Rutherford backscattering spectroscopy (RBS), x-ray diffraction (XRD), scanning electron microscopy (SEM) in conjunction with
energy-dispersive spectrometry (EDS), and four-point probe techniques. We observe that nickel monosilicide (NiSi) is stable
up to 4 h annealing at 500°C. It is also found that, after 6 h and 10 h annealing, severe agglomeration sets in and NiSi thin
films tear off and separate into different clusters of regions of NiSi and Si on the surface. Due to this severe agglomeration
and tearing off of the NiSi films, sheet resistance is increased by a factor of 2 despite the fact that no NiSi to NiSi2 transition occurs. It is also observed that, with increasing annealing time, the interface between NiSi and Si becomes rougher. 相似文献