Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

本征吸除硅片特性研究

本文描述硅本征吸杂片的特性参数,如吸除区宽度、洁净度,氧沉淀密度、MOS电容寿命,介绍了表面态密度及残余间隙氧浓度的检测方法和工艺对参数的影响及参数之间的内在联系,文章还实验论证了不同参数水平对器件成品率的影响,建立了以MOS电容寿命为主导的参数控制方法,利用本文提供的控制参数,可使CCD-512器件成品率达60％,以上优品率≥85％。     

Determination of generation lifetime fromC-t transients under linear voltage ramp bias

When a linear voltage ramp is applied to the gate of a MOS capacitor, a capacitancetime (C-t) transient is observed. The MOS capacitor is biased into strong inversion before applying the voltage ramp in order to eliminate surface generation. FromC-t transient curve obtained experimentally the minority carrier generation lifetime in semiconductor can be determined. The experimental results show that for the same sample the lifetimes extracted fromC-t curves under varying voltage sweep rates are close each other, and they are consistent with the lifetimes extracted by saturation capacitance method.     

一种新的磷化铟复合沟道高电子迁移率晶体管小信号物理模型

针对磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的特点，对常规单沟道HEMT的小信号物理模型进行了修正，提出了一种新的用于复合沟道HEMT的小信号物理模型，用商用器件模拟软件ISE(integrated systems engineering)对其进行了仿真验证，对比了实测和仿真的I-V特性及转移特性曲线，重点研究了在InGaAs/InP双层沟道中考虑量子效应后的电场和电流密度随着不同栅电压的变化趋势，研究结果表明，由于在沟道中存在量子效应，在栅下靠源端低电场区域，电流主要分布在InGaAs沟道 关键词： 高电子迁移率晶体管 复合沟道 物理模型 磷化铟     

Finite element error estimates for non-linear elliptic equations of monotone type

Summary In this paper we shall consider the application of the finite element method to a class of second order elliptic boundary value problems of divergence form and with gradient nonlinearity in the principal coefficient, and the derivation of error estimates for the finite element approximations. Such problems arise in many practical situations — for example, in shock-free airfoil design, seepage through coarse grained porous media, and in some glaciological problems. By making use of certain properties of the nonlinear coefficients, we shall demonstrate that the variational formulations associated with these boundary value problems are well-posed. We shall also prove that the abstract operators accompanying such problems satisfy certain continuity and monotonicity inequalities. With the aid of these inequalities and some standard results from approximation theory, we show how one may derive error estimates for the finite element approximations in the energy norm.     

MOS功率驱动高速脉冲激光器的研究

运用经典电路理论,对MOS功率管的开关特性、驱动原理进行了分析,导出了应用MOS功率管实现高速大电流开关应遵从的原则和方法,并成功地实现了光脉冲上升时间小于5ns、下降时间小于10ns,驱动电流达10～50AP-P激光器电源的要求.     

Continuous time collocation methods for Volterra-Fredholm integral equations

Summary Integral equations of mixed Volterra-Fredholm type arise in various physical and biological problems. In the present paper we study continuous time collocation, time discretization and their global and discrete convergence properties.     

Optimality relationships forp-cyclic SOR

Summary The optimality question for blockp-cyclic SOR iterations discussed in Young and Varga is answered under natural conditions on the spectrum of the block Jacobi matrix. In particular, it is shown that repartitioning a blockp-cyclic matrix into a blockq-cyclic form,q, results in asymptotically faster SOR convergence for the same amount of work per iteration. As a consequence block 2-cyclic SOR is optimal under these conditions.Research supported in part by the US Air Force under Grant no. AFOSR-88-0285 and the National Science Foundation under grant no. DMS-85-21154 Present address: Boeing Computer Services, P.O. Box 24346, MS 7L-21, Seattle, WA 98124-0346, USA     

Correlated and non-correlated growth kinetics of pentacene in the sub-monolayer regime

We present a study of the growth kinetics of pentacene monolayer islands on SiO₂ in the submonolayer regime by using Atomic Force Microscopy (AFM). Two distinct growth modes, namely correlated growth (CG) and non-correlated growth (NCG), have been identified by Voronoi tesselation. These two modes are characterized by different island growth kinetics. In the case of correlated growth, the average island size 〈A〉 scales with deposition time t i.e. 〈A〉 ∝ t whereas for non-correlated growth, 〈A〉 ∝ t². The CG and NCG regimes are defined by the level of re-evaporation which determines the capture zones around the islands: Wigner-Seitz cells for CG and coronas of width λ_D (λ_D is the mean diffusion distance on SiO₂ before re-evaporation) for NCG. A simple model is proposed to reproduce the experimental growth kinetics in both modes.     

Tchebychev acceleration technique for large scale nonsymmetric matrices

Summary The acceleration by Tchebychev iteration for solving nonsymmetric eigenvalue problems is dicussed. A simple algorithm is derived to obtain the optimal ellipse which passes through two eigenvalues in a complex plane relative to a reference complex eigenvalue. New criteria are established to identify the optimal ellipse of the eigenspectrum. The algorithm is fast, reliable and does not require a search for all possible ellipses which enclose the spectrum. The procedure is applicable to nonsymmetric linear systems as well.