一种沟槽-场限环复合终端结构的设计

为了改善硅功率器件击穿电压性能以及改善IGBT电流的流动方向,提出了一种沟槽-场限环复合终端结构。分别在主结处引入浮空多晶硅沟槽,在场限环的左侧引入带介质的沟槽,沟槽右侧与场限环左侧横向扩展界面刚好交接。结果表明,这一结构改善了IGBT主结电流丝分布,将一部分电流路径改为纵向流动,改变了碰撞电离路径,在提高主结电势的同时也提高器件终端结构的可靠性;带介质槽的场限环结构进一步缩短了终端长度,其横纵耗尽比为3.79,较传统设计的场限环结构横纵耗尽比减少了1.48%,硅片利用率提高,进而减小芯片面积,节约制造成本。此方法在场限环终端设计中非常有效。     

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

Al₂O₃, HfO₂, and composite HfO₂/Al₂O₃ films were deposited on n-type GaN using atomic layer deposition (ALD). The interfacial layer of GaON and HfON was observed between HfO₂ and GaN, whereas the absence of an interfacial layer at Al₂O₃/GaN was confirmed using X-ray photoelectron spectroscopy and transmission electron microscopy. The dielectric constants of Al₂O₃, HfO₂, and composite HfO₂/Al₂O₃ calculated from the C-V measurement are 9, 16.5, and 13.8, respectively. The Al₂O₃ employed as a template in the composite structure has suppressed the interfacial layer formation during the subsequent ALD-HfO₂ and effectively reduced the gate leakage current. While the dielectric constant of the composite HfO₂/Al₂O₃ film is lower than that of HfO₂, the composite structure provides sharp oxide/GaN interface without interfacial layer, leading to better electrical properties.     

Fine-tuning the molecular energy levels by incorporating thiophene units onto the π-backbone of core-expanded naphthalene diimides

A series of core-expanded naphthalene diimides (NDI-DTYM) and thiophene-based derivatives (1a-c) were designed and synthesized to investigate the relationship between molecular structures and the highest occupied molecular orbital (HOMO) energy levels but has little impact on the lowest unoccupied molecular orbital (LUMO) energy levels. The results demonstrated that increasing the number of thiophene units can gradually elevate the HOMO energy levels but had little impact on the LUMO energy levels. The n-channel organic field-effect transistors (OFETs) based on 1b and 1c have demonstrated that these almost unchanged LUMO energy levels are proper to transport electrons.     

Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors

The impact of internal irradiation with secondary Compton electrons, generated by gamma-photons, on the characteristics of III-N/GaN-based devices was explored. N-channel AlGaN/GaN high-electron-mobility transistors (HEMTs) were exposed to gamma-radiation from a ⁶⁰Co source for doses up to 600?Gy. Temperature-dependent electron beam-induced current (EBIC) was employed to measure minority carrier transport properties. For low doses below ～250?Gy, the minority carrier diffusion length in AlGaN/GaN HEMTs is shown to increase by about 40%. This increase is likely due to longer minority carrier lifetime induced by internal Compton electron irradiation. An associated decrease in activation energy, extracted from temperature-dependent EBIC, was also found. The obtained increase in transconductance and decrease in gate leakage current indicate an improvement in performance of the devices after low doses of irradiation. For high doses of gamma-irradiation, above ～300?Gy, the performance of HEMTs showed a deterioration. The deterioration results from the onset of increased carrier scattering due to additional radiation-induced defects, as is translated in a decrease of minority carrier diffusion length.     

Extrapolation applied to certain discretization methods solving the initial value problem for hyperbolic differential equations

Summary The procedurediwiex presented in this paper provides an approximate solution to Cauchy's initial value problem for general hyperbolic systems of first order. The procedurecharex can be applied to the initial value problem for a hyperbolic system of quasi-linear differential equations. This second method is a kind of method of characteristics. It produces a solution for the whole domain of determinancy. Both procedures use extrapolation to the limit. Editor's Note. In this fascile, prepublication of algorithms from the Approximations series of the Handbook for Automatic Computation is continued. Algorithms are published in ALGOL 60 reference language as approved by the IFIP. Contributions in this series should be styled after the most recently published ones     

The contraction number of a multigrid method for solving the Poisson equation

Summary The treatment of a multigrid method in the framework of numerical analysis elucidates that regularity of the solution is not necessary for the convergence of the multigrid algorithm but only for fast convergence. For the linear equations which arise from the discretization of the Poisson equation, a convergence factor 0,5 is established independent of the shape of the domain and of the regularity of the solution.Dedicated to Professor Dr.Dr.h.c. Lothar Collatz on the occasion of his 70 th birthday     

Linear algorithms for testing the sign stability of a matrix and for findingZ-maximum matchings in acyclic graphs

Summary Ann×n real matrixA=(a _ij ) isstable if each eigenvalue has negative real part, andsign stable (orqualitatively stable) if each matrix B with the same sign-pattern asA is stable, regardless of the magnitudes ofB's entries. Sign stability is of special interest whenA is associated with certain models from ecology or economics in which the actual magnitudes of thea _ij may be very difficult to determine. Using a characterization due to Quirk and Ruppert, and to Jeffries, an efficient algorithm is developed for testing the sign stability ofA. Its time-and-space-complexity are both 0(n ²), and whenA is properly presented that is reduced to 0(max{n, number of nonzero entries ofA}). Part of the algorithm involves maximum matchings, and that subject is treated for its own sake in two final sections.     

A generalization of the Stein-Rosenberg theorem to Banach spaces

Summary In the first part of this note we prove a generalization of the Stein-Rosenberg theorem; the context is that of real Banach spaces with a normal reproducing cone and the operators involved are positive and completely continuous. Our generalization of the Stein-Rosenberg theorem improves the modern version of it as stated by F. Robert in [5, §2]. In the second part, we discuss briefly how our results are related to other versions of the Stein-Rosenberg theorem. In the last section we describe a situation to which the results in the first part can be applied.     

Numerical application of Euler's series transformation and its generalizations

Summary A nonlinear generalizationÊ _z of Euler's series transformation is compared with the (linear) Euler-Knopp transformationE _z and a twoparametric methodE . It is shown how to applyE orE _, to compute the valuef(z_o) of a functionf from the power series at 0 iff is holomorphic in a half plane or in the cut plane. BothE andE _, are superior toÊ _z . A compact recursive algorithm is given for computingE andE _,.