半导体激光器三阶载波互调非线性失真

对半导体激光器的P-I特性曲线的非线性引起的三阶载波互调非线性失真进行了理论分析,得出了减少非线性失真的方法,并在实验上获得了验证.     

Al_xGa_(0.51-x)In_(0.49)P光学性质的研究

用MOCVD方法在GaAs衬底上生长了AlGaInP的本征及掺Si或掺Mg三个样品。用椭偏光谱法测量了样品在室温下可见光区的光学常数 ,并求其介电函数的三级微商谱。用三点比例内插法分析介电函数的三级微商谱 ,精确地得到样品的带隙Eg、Eg+Δ0 以及Eg 以上成对结构跃迁的能量位置 ,并对其结果加以分析。同时与沟道分析等方法相结合对材料的性能进行了鉴定。     

半导体量子点的生长机理及特性

阐述了半导体量子点自组织生长方法的基本原理,并介绍了半导体量子点的一些特性,如激子束缚能、载流子动力学、排列规则和光学性质。     

Novel Fiber Optic Temperature Sensor with Full Compensation Based on Optical Absorption

A novel system configuration of fiber optic sensor based on optical absorption is proposed.Several compensation measures are discussed. A simulated experiment is designed and the output curve of system is given.The experimental result shows that these compensation measures are effective on dynamic disturbances which are caused by background light and optical fiber bend,In addition,the drifts in the light source intensity , fiber losses,and photodetector efficiency are aslo compensated.     

Singlet-Triplet Transitions of a Pöschl-Teller Quantum Dot

We study the energy spectra of a two-dimensional two-electron quantum dot (QD) with Pöschl-Teller confining potential under the influence of perpendicular homogeneous magnetic field. Calculations are made by using the method of numerical diagonalization of Hamiltonian matrix within the effective-mass approximation. A ground-state behavior (spin singlet-triplet transitions) as a function of the strength of a magnetic field is found. We find that the dot radius R of a Pöschl-Teller potential is important for the ground-state transition and the feature of ground-state for a Pöschl-Teller QD and a parabolic QD is similar when R is larger. The larger the well depth, the higher the magnetic field for the singlet-triplet transition of the ground-state of two interacting electrons in a Pöschl-Teller QD.     

Characteristics of selective oxidation during the fabrication of vertical cavity surface emitting laser

Taking into account oxidation temperature, N₂ carrier gas flow, and the geometry of the mesa structures this paper investigates the characteristics of selective oxidation during the fabrication of the vertical cavity surface emitting laser (VCSEL) in detail. Results show that the selective oxidation follows a law which differs from any reported in the literature. Below 435℃ selective oxidation of Al_0.98Ga_0.02As follows a linear growth law for the two mesa structures employed in VCSEL. Above 435℃ approximately increasing parabolic growth is found, which is influenced by the geometry of the mesa structures. Theoretical analysis on the difference between the two structures for the initial oxidation has been performed, which demonstrates that the geometry of the mesa structures does influence on the growth rate of oxide at higher temperatures.     

Synthesis and X‐ray powder diffraction studies of semiconducting alloys in the system AgCd2‐xZnxGaS4

X‐ray powder technique was used in the investigation of AgCd₂GaS_4–'AgZn₂GaS₄' section to determine the region of AgCd₂GaS₄‐based solubility. It was established that the solid solution forms up to 75 mol.% 'AgZn₂GaS₄'. The refinement of AgCd_0.5Zn_1.5GaS₄ structure was performed. This alloy crystallizes in orthorhombic structure (space group Pmn2₁ ) with unit cell parameters a =0.78772(2), b =0.67221(2), c =0.64019(2) nm, V =0.33899(3) nm³. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Metal/semiconductor hybrids consisting of self-assembled CdS nanoparticles on Cd nanowires

We report on the synthesis and the characterisation of metal/semiconductor hybrids consisting of self-assembled CdS nanoparticles on Cd nanowires, which are grown by thermal evaporation of the mixture of CdS and Cr. The growth of the hybrids is attributed to the decomposition of CdS at high temperature and the strain relieving that arises mainly from the lattice mismatch between Cd and CdS. Temperature dependence of zero-field resistance of single nanohybrid indicates that the as-produced Cd/CdS nanohybrid undergoes a metal--semiconductor transition as a natural consequence of hybrid from metallic Cd and semiconducting CdS. The metal/semiconductor hybrid property provides a promising basis for the development of novel nanoelectronic devices.     

计算半导体平板微腔自发发射的近似方法

引入新变量,并利用高阶泰勒展开完成半导体平板微腔自发发射的空间积分,由此得到半导体平板微腔TE模式自发发射的近似表达式.在腔长为半个中心波长和高反射率腔面的半导体平板微腔中,结合电子和空穴的费米分布函数,用近似方法计算垂直方向小角度内自发发射谱和总的自发发射谱,分别与数值空间积分基本相同,可以用于计算量子阱平板微腔自发发射谱.     

Improving nucleation in the fabrication of high-quality 3D macro-porous copper film through the surface-modification of a polystyrene colloid-assembled template

A new approach is developed to the fabrication of high-quality three-dimensional macro-porous copper films. A highly-ordered macroporous copper film is successfully produced on a polystyrene sphere (PS) template that has been modified by sodium dodecyl sulfate (SDS). It is shown that this procedure can change a hydrophobic surface of PS template into a hydrophilic surface. The present study is devoted to the influence of the electrolyte solution transport on the nucleation process. It is demonstrated that the permeability of the electrolyte solution in the nanochannels of the PS template plays an important role in the chemical electrodeposition of high-quality macroporous copper film. The permeability is drastically enhanced in our experiment through the surface modification of the PS templates. The method could be used to homogeneously produce a large number of nucleations on a substrate, which is a key factor for the fabrication of the high-quality macroporous copper film.