Interface trap-induced negative differential resistance in nMOSFET with floating source

Interface trap can act as the generation center in device to induce a very weak generation current. We observed the negative differential resistance NDR of this generation current I_D in nMOSFET with the floating source. It originates from that the generation function of interface trap is enabled and then is shut down in turn as increasing the drain voltage. This change relies on the interaction among the interface trap energy-level and the electron's Fermi-levels of drain and source under the floating source condition. It is found that the peak-to-valley ratio of I_D is beyond 30.     

Windows系统下RPC堆溢出的研究

RPC溢出漏洞成为Windows系统安全的巨大威胁。介绍了RPC的原理，研究了RPC中Stub的数据构造和标准,分析了堆结构和堆溢出原理，总结了堆溢出漏洞的利用方法，针对一个RPC堆溢出漏洞分析了利用过程，提出了RPC堆溢出漏洞攻击的防范措施。     

Electrical Switching in TlSbSe2 Chalcogenide Semiconductors

Electrical measurements were performed on TlSbSe₂ ternary crystals in the temperature range 293–413 K. The obtained I–V characteristics consist of two regions: an Ohmic region at low current densities, and nonlinear regions having negative differential resistance (NDR) at moderate and higher current densities. The nonlinear behavior of the I–V curves was studied at different ambient temperatures. The sample temperature and the threshold voltage of the NDR region were also examined as a function of the ambient temperature. We detected that the investigated samples exhibit threshold-type switching and propose that the switching mechanism has an electronic origin.     

Active only integrator and differentiator with tunable time constants

In this paper new active only current-mode integrator and differentiator with electronically tunable time constants are described. They are composed of one operational amplifier (OA) and two operational transconductance amplifiers (OTAs), and are suitable for monolithic implementation either with CMOS or bipolar technologies. No realizability conditions are imposed for the proposed circuits and all of the active sensitivities are low. The performances of the circuits are demonstrated on the PSPICE platform.     

自组装Si量子点阵中室温共振隧穿及微分负阻特性

报道了自组装Si量子点（Si-QDs）阵列在室温下的共振隧穿及其微分负阻特性. 在等离子增强化学气相沉淀系统中,采用layer-by-layer的淀积技术和原位等离子体氧化方法制备了Al/SiO2/Si-QDs/SiO2/Substrate双势垒结构. 通过原子力显微镜和透射电子显微镜检测,证实所获得的Si-QDs阵列中Si量子点平均尺寸为6nm,并具有较好的尺寸均匀性（小于10%). 在对样品的室温I-V和C-V特性的测量中,直接观测到由于Si量子点中分立能级而引起的共振隧穿和充电效应：I-V特性表现出显著的“微分负阻特性(NDR)" ;而C-V特性中也同样观测到位置相对应、结构相似的峰结构,从而证实了I-V和C-V特性中的峰结构都同样来源于电子与Si量子点阵列中分离能级之间的共振隧穿和充电过程. 进一步研究发现,Si量子点阵列中共振隧穿和NDR特性所特有“扫描方向”和“速率”依赖性及其机制,与量子阱的情况有所不同. 通过所建立的主方程数值模型,成功地解释并重复了Si量子点阵中共振隧穿所特有的输运特性.     

Hot phonons and instabilities in GaAs/GaAlAs structures

We report experimental observations concerning high field parallel transport in GaAs/GaAlAs quantum-well structures comparing degenerate and non-degenerate material. Hot electron photoluminescence measurements show hot-phonon reduction of the energy relaxation rates in degenerate material as compared with that in non-degenerate material in agreement with a simple model of transport involving hot phonon effects. The latter predicts a reduction in drift velocity at high fields compared with that in bulk material and this is observed in our specimens. Hot phonons are shown to inhibit instabilities. Non degenerate samples exhibit current instabilities much more readily than degenerate material. In the latter, the hot phonon reduction in drift velocity will tend to inhibit NDR via real space transfer or via intervalley transfer.     

Electronic transport properties in benzene-based heterostructure: Effects of anchoring groups

Using density functional theory (DFT) combined with nonequilibrium Green?s functions (NEGF), the electronic transport properties of benzene-based heterostructure molecular devices have been investigated. We focus on the contact geometry between molecules and electrodes, and several different anchoring groups have been considered. The current–voltage characteristics were calculated for positive and negative bias voltages, and discussed in terms of transmission spectra, transferred charges, and molecular projected self-consistent Hamiltonian (MPSH) states. Our results show that the anchoring groups play a crucial role in determining the overall conductivity of the molecular devices. Negative differential resistance (NDR) and rectifying effect can be observed.     

Investigation of negative differential resistance properties of self-assembled dipyridinium using STM

Recently, research on conducting molecules containing thiol functional groups such as benzenethiol has been progressing [X. Xiao, B. Xu, N.J. Tao, Nano Lett. 4 (2004) 267]. This conducting molecule is applicable to the study of the negative differential resistance (NDR) and switching properties of logic device. The 4-{4[4-(4-{1-[4-(4-acetylsulfanyl-phenylethynyl)-phenyl]-2,6-diphenyl-pyridinium-4-yl}-phenyl)-2,6-diphenyl-pyridinium-1-yl]-phenylethynyl}-phenylthioacetate (dipyridinium) molecule contains thiol functional groups such as benzenethiol. Thus, we have studied an NDR property of a dipyridinium molecule using the self-assembly method in scanning tunneling microscopy (STM). The Au substrate was exposed to a 1 mM solution of 1-dodecanethiol in ethanol for 24 h to form a monolayer. After thorough rinsing of the sample, it was exposed to a 0.1 μM solution of dipyridinium in dimethylformamide (DMF) for 30 min. After the assembly, we measured the electrical properties of the self-assembly monolayers (SAMs) using ultra high vacuum scanning tunneling microscopy (UHV-STM) and scanning tunneling spectroscopy (STS). As a result, we confirmed the properties of NDR in a negative region at −1.67 V and a positive region at 1.78 V. The energy gap (E_g) was found to be 3.12 eV [C. Arena, B. Kleinsorge, J. Robertson, W.I. Milne, M.E. Welland, J. Appl. Phys. 85 (1999) 1609]. This molecule is applicable to the fabrication of molecular junctions.     

表面单分子的表征和操纵

本文对国内外表面单分子的表征和操纵的研究概况进行了简短评述,重点介绍了我们的一些基础研究结果,结合扫描隧道显微术和电子密度泛函理论模拟,在单分子C60的高分辨表征、C60在Si表面的吸附取向、富勒烯分子Dy@C82的空间和能量分辨、Pd纳米颗粒的无序抑制量子限域效应,制备基于C60的负微分电导和C59N的分子整流器件及单个CoPc分子自旋性质的调控等方面取得一些较重要的进展。     

Electrical instability in a semiconductor gas discharge system

Electrical instability in a SI GaAs plates of the semiconductor gas discharge gap system (SGDGS) is studied experimentally in a wide range of the gas pressures, interelectrode distances and different diameters of the cathode areas. While being driven with a stationary voltage, it generates current and discharge light emission (DLE) instabilities with different amplitudes of the oscillation. It is shown that under the experimental conditions the interelectrode distance played only a passive role and was not responsible for the appearance of the DLE instability. At the same time for different diameters D of the GaAs plate areas the expanded range of current and DLE oscillations are observed. SGDGS with an N‐shaped CVC was analyzed using both the current and DLE data showing the electrical instability in the GaAs cathode. It was found that application of high feeding voltage to this cathode give rise to non‐uniform spatial distribution of the DLE, which disturbed the operation of the system. The experiment presents also a new metod to study and visualization of the electrical instabilities in high‐resistivity GaAs plates of large diameter. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)