Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.     

Memory and a priori best strategy in complex adaptive systems

We employ an agent‐based model to show that memory and the absence of an a priori best strategy are sufficient for self‐segregation and clustering to emerge in a complex adaptive system with discrete agents that do not compete over a limited resource nor contend in a winner‐take‐all scenario. An agent starts from a corner of a two‐dimensional lattice and aims to reach a randomly selected site in the opposite side within the shortest possible time. The agent is isolated during the course of its journey and does not interact with other agents. Time‐bound obstacles appear at random lattice locations and the agent must decide whether to challenge or evade any obstacle blocking its path. The agent is capable of adapting a strategy in dealing with an obstacle. We analyze the dependence of strategy‐retention time with strategy for both memory‐based and memory‐less agents. We derive the equality spectrum to establish the environmental conditions that favor the existence of an a priori best strategy. We found that memory‐less agents do not polarize into two opposite strategy‐retention time distributions nor cluster toward a center distribution. © 2004 Wiley Periodicals, Inc. Complexity 9: 41–46, 2004     

石灰石闪蒸改性及脱硫性能的试验研究

本文对3种不同产地的石灰石进行了闪蒸改性处理,对改性石灰石颗粒的孔径分布进行了测定,研究了压力、温度等参数对石灰石闪蒸改性的影响。并在气流反应器上对闪蒸后的样品进行了硫化试验。结果表明,在一定的压力和温度下,闪蒸处理能够增大石灰石颗粒的微孔孔径,并使石灰石样品的脱硫性能得到较大提高。     

高清晰度电视样机控制子系统的实现

本文提出了基于微处理器AT89C55的国家高清晰度电视样机控制子系统的总体设计方案和软硬件实现方法。目前，该控制系统己顺利完成，并参与北京、上海两地的功能样机测试。     

基于约束优化的联想记忆模型学习算法

本文提出了一种对称互连神经元网络的学习策略,利用全局约束优化方法确定连接权。优化过程采用了梯度下降技术。这种学习算法可以保证训练样本成为系统的稳定吸引子,并且具有优化意义上的最大吸引域。本文讨论了网络的存储容量,训练样本的渐近稳定性和吸引域大小。计算机实验结果说明了学习算法的优越性。     

氙灯泵浦的NYAB晶体调Q激光运转特性及实验研究

首次报道了氙灯泵浦的自激活自倍频NYAB复合功能晶体的BDN染料片调Q运转,获得了自倍频绿光单脉冲.测量了不同L和T_o情况下的绿光脉冲的能量、脉宽和峰值功率.文中还从理论上推导了自激活自倍频晶体调Q激光器的方程组.数值求解方程组,所得的理论数据与实验结果很好地相符.最后,讨论了进一步提高绿光脉冲峰值功率的途径.     

Asymptotic stability of semigroups associated with linear weak dissipative systems with memory

We study the asymptotic behavior of the solutions of a class of linear dissipative integral differential equations. We show in the abstract setting a necessary and sufficient condition to get an exponential decay of the solution. In the case of the lack of exponential decay, we find the polynomial rate of decay of the solution. Some examples are given.     

Stability of the steady state for the Falk model system of shape memory alloys

In this article a stability result for the Falk model system is proven. The Falk model system describes the martensitic phase transitions in shape memory alloys. In our setting, the steady state is a nonlocal elliptic problem. We show the dynamical stability for the linearized stable critical point of the corresponding functional. Copyright © 2007 John Wiley & Sons, Ltd.     

Nonlinear Time Series Analysis Since 1990:Some Personal Reflections

Abstract I reflect upon the development of nonlinear time series analysis since 1990 by focusing on five majorareas of development. These areas include the interface between nonlinear time series analysis and chaos,thenonparametric/semiparametric approach,nonlinear state space modelling,financial time series and nonlinearmodelling of panels of time series.     

一种低压低功耗SRAM/SOI单元设计

提出一种改进4管自体偏压结构SRAM/SOI单元.基于TSUPREM4和MEDICI软件的模拟和结构性能的分析,设计单元结构并选取结构参数.该结构采用nMOS栅下的含p+埋沟的衬底体电阻代替传统6管CMOSSRAM单元中的pMOS元件,具有面积小、工艺简单的优点.该结构可以在0.5V的电源电压下正常工作,与6管单元相比,该单元瞬态响应正常,功耗只有6管单元的1/10,满足低压低功耗的要求.