基于SPCE061A单片机的直流电子负载的设计

直流电子负载系统采用凌阳公司SPCE061A单片机为控制核心,由信号处理模块、A/D转换模块、D/A转换模块、液晶显示模块、矩阵键盘等模块组成.它能够实现恒流、恒压、恒阻和恒功率四种工作模式.其中恒压与恒流模式为基本的工作模式,而恒阻和恒功率模式是在恒流模式的基础上实现的.本系统的主要特点就是采用LM358双运算放大器和MTY25 N60E大功率场效应管构成负载的信号处理模块,这样的信号处理模块设计能够更容易获得稳定且精确的负载信号.由于SPC E061A单片机内部集成了A/D和D/A,大大简化了电路,提高了系统的可靠性.     

基于OTN技术的大颗粒业务大连接承载模式研究

近年,各类专线业务的“大带宽、低时延、快响应”诉求愈加明显,对传送网的承载能力提出更高的要求,特别是其中N*10G 业务需求规模逐年增加, 有必要研究一套标准化的承载模式来满足业务接入的需求,以实现对业务连接的网络承载模式标准化、快速化、智能化。     

驱动AM-OLED的2-a-Si:H TFT的设计与制作

a-Si：H／SiNx：H TFT在长时间栅偏应力作用下，会产生阈值电压漂移，这主要是由绝缘层电荷注入和有源层亚稳态产生而引起的。针对电荷注入现象，文章首先通过控制源气体SiH4和NH3流量的不同，利用PECVD制作了不同N／Si比（0．87～1．68）的氮化硅绝缘材料，对其进行了椭偏、红外和光电子散射能谱（EDS）测试。制作了不同的MIS结构电容，对其进行老化实验和C-V测试分析，结果表明稍富氮（N／Si比稍大于标准Si3N4的化学计量比1．33）的氮化硅做成的M1S样品在老化前后C-V曲线偏移不是很明显，表明其缺陷态密度相对较小，能够有效减小半导体／绝缘层界面间的电荷注入。设计了驱动OLED的2-a-Si：H TFT像素电路及其阵列版图，优化了电路中的几个关键参数，即T1的W／L=2．5、T2的W／L=25和存储电容Cs=0．8pF。运用7PEP生产工艺，制作了13cm（5．2in）的TFT阵列样品。对TFT进行I-V特性测试，其开态电流为10μA，开关比为10^6；对AMOLED显示屏样品进行了静态驱动下的亮度测试，其最高亮度为341cd／m^2。     

光化学汽相淀积技术在薄膜备制中的应用

介绍了光化学汽相淀积法的原理以及ＰＶＤ－１０００设备淀积薄膜的规律，特点等，并且给出了所淀积的ＳｉＯ２膜，Ｓｉ３Ｎ４膜和ＺｎＳ膜的基本特性。     

Non-relativistic Limit of a Dirac Polaron in Relativistic Quantum Electrodynamics

A quantum system of a Dirac particle interacting with the quantum radiation field is considered in the case where no external potentials exist. Then the total momentum of the system is conserved and the total Hamiltonian is unitarily equivalent to the direct integral of a family of self-adjoint operators acting in the Hilbert space , where is the Hilbert space of the quantum radiation field. The fiber operator is called the Hamiltonian of the Dirac polaron with total momentum . The main result of this paper is concerned with the non-relativistic (scaling) limit of . It is proven that the non-relativistic limit of yields a self-adjoint extension of a Hamiltonian of a polaron with spin 1/2 in non-relativistic quantum electrodynamics.     

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Planar radio frequency inductively coupled plasmas(ICP) are employed for low-voltage ion implantation processes,with capacitive pulse biasing of the substrate for modulation of the ion energy. In this work, a two-dimensional(2D) selfconsistent fluid model has been employed to investigate the influence of the pulsed bias power on the nitrogen plasmas for various bias voltages and pulse frequencies. The results indicate that the plasma density as well as the inductive power density increase significantly when the bias voltage varies from 0 V to-4000 V, due to the heating of the capacitive field caused by the bias power. The N+fraction increases rapidly to a maximum at the beginning of the power-on time, and then it decreases and reaches the steady state at the end of the glow period. Moreover, it increases with the bias voltage during the power-on time, whereas the N_2~+ fraction exhibits a reverse behavior. When the pulse frequency increases to 25 kHz and40 kHz, the plasma steady state cannot be obtained, and a rapid decrease of the ion density at the substrate surface at the beginning of the glow period is observed.     

Discretization by finite elements of a model parameter dependent problem

The discretization by finite elements of a model variational problem for a clamped loaded beam is studied with emphasis on the effect of the beam thickness, which appears as a parameter in the problem, on the accuracy. It is shown that the approximation achieved by a standard finite element method degenerates for thin beams. In contrast a large family of mixed finite element methods are shown to yield quasioptimal approximation independent of the thickness parameter. The most useful of these methods may be realized by replacing the integrals appearing in the stiffness matrix of the standard method by Gauss quadratures.     

Convergence of a penalty-finite element approximation for an obstacle problem

Summary This study establishes an error estimate for a penalty-finite element approximation of the variational inequality obtained by a class of obstacle problems. By special identification of the penalty term, we first show that the penalty solution converges to the solution of a mixed formulation of the variational inequality. The rate of convergence of the penalization is where is the penalty parameter. To obtain the error of finite element approximation, we apply the results obtained by Brezzi, Hager and Raviart for the mixed finite element method to the variational inequality.     

Cellularity in polyhedra

A compact subset X of a polyhedron P is cellular in P if there is a pseudoisotropy of P shrinking precisely X to a point. A proper surjection between polyhedra f:P→Q is cellular if each point inverse of f is cellular in P. It is shown that if f:P→Q is a cellular map and either P or Q is a generalized n-manifold, n≠4, then f is approximable by homeomorphisms. Also, if P or Q is an n-manifold with boundary, n≠4, 5, then a cellular map f:P→Q is approximable by homeomorphisms. A cellularity criterion for a special class of cell-like sets in polyhedra is established.     

N2（A）及N（2D）对IF（X）的传能研究

在微波放电系统中,对NH_3-F-F_2-CF_3I体系进行研究,结果表明,向IF(X)传能的诸多媒介中,N_2(A)及N(~2D)起着主要作用,并且这一结论在经微波激发后的N_2与CF_3I的直接反应中得到了进一步证实。