Extremely large binding energy of biexcitons in an organic-inorganic quantum-well material (C4H9NH3)2PbBr4

We have confirmed biexciton formation in an organic-inorganic hybrid quantum-well material (C₄H₉NH₃)₂PbBr₄ by photoluminescence and two-photon absorption measurements. The biexciton has extremely large binding energy, 60 meV, which to our knowledge is the largest value ever reported for a semiconductor. By analyzing the spectrum of biexciton luminescence, the biexciton gas temperature was found to be much higher than the bath temperature due to a higher local temperature arising from the large biexciton binding energy.     

Braiding structures on formal Poisson groups and classical solutions of the QYBE

If is a quasitriangular Lie bialgebra, the formal Poisson group can be given a braiding structure. This was achieved by Weinstein and Xu using purely geometrical means, and independently by the authors by means of quantum groups. In this paper we compare these two approaches. First, we show that the braidings they produce share several similar properties (in particular, the construction is functorial); secondly, in the simplest case (G=SL₂) they do coincide. The question then rises of whether they are always the same this is positively answered in a separate paper.     

Structure and optical properties of lead iodide based two-dimensional perovskite compounds containing fluorophenethylamines

Phenethylammonium-based perovskites, which can be regarded as a semiconductor/insulator multiple quantum well consisting of lead halide semiconductor layers sandwiched between phenethylammonium insulator layers were prepared. To investigate the effects of the electronic state and the orientation of organic insulator layers on the optical properties of layered perovskites, fluorine substituted analogues were also prepared. The structure and optical properties were investigated by the XRD, UV–Vis absorption, and fluorescence measurements. The exciton absorption peak was shifted by the substitution of fluorine atoms in organic ammonium compounds. It became clear that the optical properties of two-dimensional perovskite compounds were controlled by the substitution of fluorine atoms.     

InAs/GaAs quantum dot infrared photodetectors with different growth temperatures

InAs/GaAs quantum dot infrared photodetectors were fabricated with quantum dots grown at three different temperatures. Large detection wavelength shift (5–14.5 μm) was demonstrated by changing 40 degrees of the epitaxy temperature. The smaller quantum dots grown at lower temperature generate 14.5 μm responses. The detectivity of the normal incident 15 μm QDIP at 77 K is 3 × 10⁸ cm Hz^1/2/W. A three-color detector was also demonstrated with quantum dots grown at medium temperature. The three-color detection comes from two groups of different sizes of dots within one QD layer. This new type of multicolor detector shows unique temperature tuning behavior that was never reported before.     

SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3–1.55 μm

The aim of this work is to develop a Si/SiGe HBT-type phototransistor with several Ge dot layers incorporated in the collector, in order to obtain improved light detectivity at 1.3–1.55 μm. The MBE grown HBT detectors are of n–p–n type and based on a multilayer structure containing 10 Ge-dot layers (8 ML in each layer, separated by 60 nm Si spacer) in the base-collector junction. The transistors were processed for normal incidence or with waveguide geometry where the light is coupled through the edge of the sample. The measured breakdown voltage, BV_ceo, was about 6 V. Compared to a p–i–n reference photodiode with the same dot layer structure, photoconductivity measurements show that the responsivity is improved by a factor of 60 for normal incidence at 1.3 μm. When the light is coupled through the edge of the device, the detectivity is even further enhanced. The measured photo-responsivity is more than 100 and 5 mA/W at 1.3 and 1.55 μm, respectively.     

耦合双原子Jaynes-Cummings模型的腔场谱H

研究了处于激发态的两原子与高Q腔场相互作用单光子过程的腔场谱,给出了初始光场为光子数态、相干态、压缩真空态时的腔场谱数值计算结果,分析了原子间偶极-偶极相互作用强度gα对腔场谱结构的影响.发现真空场Rabi峰,当gα较弱时为4峰,gα较强时为3峰结构;弱场数态(n＞0)时为5峰,强场时为3峰结构.相干态和压缩真空态时,谱结构与光子数分布有关,一般为复杂的多峰结构.结果表明,gα对峰位峰高都有影响,破坏了谱结构的对称性,但这种影响只在真空场和弱场时才较明显.     

多孔硅发光的物理机制——纳米量子限制效应及表面态在发光中的作用

采用阳极氧化腐蚀的方法制备了多孔硅（ＰＳ），这种ＰＳ的微结构为纳米量级的，并具有光致发光特性，这无疑将对全硅光电子学的发展具有很大意义。根据大量实验与理论分析，提出了这种ＰＳ发光的物理机制：纳米量子限制效应和表面态及其物质在发光中的作用，从量子力学的薛定锷方程出发，用沟道势阱的近似模型，推导得到进入量子线的电子和空穴的能量势垒，ＰＳ的有效带宽Ｅ＝Ｅ＿０＋ΔＥ，对于Ｓｉ（Ｅ＿０＝１．１２ｅｖ）。完美地解释了目前在ＰＳ研究中的ＰＬ谱的篮移现象。     

多项选择题测验信度的一个估计方法及其应用

在多项选择题测验分数等于真实分数和猜测分数之和的假设模型下，本文得到了一个多项选择题测验信度的理论公式，并由此给出了测验信度的估计方法。最后，通过两个例子，说明了本文提出的方法在测验信度分析中的应用，并将这种方法与教育测量中常用的库德——理查逊方法（Ｋｕｄｅｒ－Ｒｉｃｈａｒｄｓｏｎ）进行了比较     

一类非线性算子方程的多重正解及其应用

本文利用不动点指数理论对一类非线性算子方程建立了多重正解的存在性定理，并将所获结果应用到Ｈａｍｍｅｒｓｔｅｉｎ积分方程和Ｓｔｕｒｍ Ｌｉｏｕｖｉｌｅ两点边值问题，得到了新的结论，本质上改进和推广了［２，４，５，６，８－１２］的工作．     

Creation of entangled states of excitons in coupled quantum dots

We present two methods for the creation of two-particle entangled states of excitons in a coupled quantum dot system. The system contains two identical quantum dots that are coupled by an inter-dot hopping process. The manipulation of the system is succeeded by proper application of an external laser field.