非故意掺杂GaN薄膜方块电阻与载气中N2比例关系研究

利用金属有机气相外延方法研究了非故意掺杂GaN薄膜的方块电阻与高温GaN体材料生长时载气中N₂比例的关系.研究发现,随着载气中N₂比例的增加,GaN薄膜方块电阻急剧增加.当载气中N₂比例为50%时,GaN薄膜方块电阻达1.1×10⁸Ω/□,且GaN表面平整,均方根粗糙度为0.233nm.二次离子质谱分析发现,载气中N₂比例不同的样品中碳、氧杂质含量无明显差别.随着载气中N₂比 关键词： 半绝缘GaN薄膜 载气 金属有机气相外延 位错     

锑化铟晶片高温加速贮存性能变化研究

锑化铟晶片在存放以及使用过程中的性能稳定性是影响制备的探测器性能的重要因素之一。为了探究锑化铟晶片在长时间放置情况下的性能变化情况,对锑化铟晶片进行高温加速贮存试验,并在试验过程中对晶片几何参数、表面粗糙度、电学参数、位错缺陷等几个重要性能参数进行跟踪检测。结果表明,在高温加速试验条件下,除晶片外形发生轻微变化以外,其他性能基本不发生变化,晶片能够长期保存。     

Si衬底GaN基多量子阱外延材料的TEM研究

本文采用高分辨透射电子显微技术对在Si衬底生长的GaN基多量子阱外延材料的位错特征、外延层与衬底的晶体取向关系及界面的结晶形态等微观结构进行了分析和研究.结果表明:Si衬底生长的GaN与衬底有一定的取向关系;材料在MQW附近的穿透位错密度达108 cm-2量级,且多数为刃型位错;样品A的多量子阱下方可见平行于界面方向的...     

应变超晶格系统的共振行为及其动力学稳定性

在经典力学框架内和Seeger方程基础上,讨论了应变超晶格界面附近的位错动力学行为,指出了系统的非线性共振将导致位错的运动与堆积,并可能造成超晶格的分层或断裂.首先,引入阻尼项,在小振幅近似下,把描述一般位错运动的Seeger方程化为了超晶格系统的广义Duffing方程.利用多尺度法分析了系统的主共振、超共振和子共振,并找到了系统出现这三类共振的临界条件.结果表明,系统的临界条件与它的物理参数有关,只需适当调节这些参数就可以原则上避免共振的出现,保证了超晶格材料的完整性和性能的稳定性. 关键词： 位错动力学 应变超晶格 共振 分岔     

电子商务专业改革探析

本文在研究电子商务内涵歧义和认识误区的基础上,分析电子商务应用职业岗位和人才培养方面存在的误区,拟在提出电子商务专业核心竞争能力的基础上,进一步分析电子商务专业人才培养问题和专业发展思路.     

Al2O3/SiCnano纳米复合材料微结构及强韧化机理研究

纳米颗粒复合材料的“内晶型”结构中，晶内的纳米相和基体间存在的次界面对材料性能的改善有更重要作用，本文系统观察了氧化铝陶瓷和Ａｌ２Ｏ３／ＳｉＣｎａｎｏ纳米复合材料的微结构，着重研究了弥散ＳｉＣ颗粒对Ａｌ２Ｏ３基体微结构的影响，讨论了“内晶型”结构，位错组态，纳米化效应和穿晶断裂之间的关系以及材料强韧化机理。     

A chronological test of ocean-bottom spreading in the North Atlantic

Fission-track and K-Ar dating of basaltic glass from the Mid-Atlantic Ridge gives results which are consistent with the proposal of ocean-floor spreading. Correlation exists between the magnetic anomaly patterns over the Crest Mountains at 45°N and the age of the outcropping basalts. The observed sequences of ages progressing outward from the Median Valley 11,000, 230,000, 310,000, 750.000, 8,000,000, and 16,000,000 years constitute strong, direct support for the idea of ocean-bottom spreading.     

Atomistic simulation of kink structure on edge dislocation in bcc iron

Based on the general theory of dislocation and kink, we have constructed the three kink models corresponding to the 1/2 （111）{011} and 1/2 （111）{112} edge dislocations （EDs） in bcc Fe using the molecular dynamics method. We found that the geometric structure of a kink depends on the type of ED and the structural energies of the atom sites in the dislocation core region, as well as the geometric symmetry of the dislocation core and the characteristic of the stacking sequence of atomic plane along the dislocation line. The formation energies and widths of the kinks on the 1/2 （111）{011} and 1/2 （111）{112} EDs are calculated, the formation energies are 0.05eV and 0.04eV, and widths are 6.02b and 6.51b, respectively （b is the magnitude of the Burgers vector）. The small formation energies indicate that the formation of kink in the edge dislocation is very easy in bcc Fe.     

Plastic deformation kinetics of electrodeposited Cu foil at low and intermediate homologous temperatures

The plastic deformation kinetics of electrodeposited (EP) Cu foil (grain size d=0.6 μm) were determined at 296–448 K and compared with those for vapor-deposited (VP) foil (d=0.5 μm) tested at 77–473 K. The apparent activation volume v=kT ∂ ln for both materials exhibited a minimum at ∼350 K, and at this temperature, there occurred a marked increase in the temperature dependence of the flow stress σ. The rate-controlling mechanism in both materials at T<373 K appears to be grain boundary shear induced by dislocation pileups at the grain boundaries. The results at T=373–473 K suggest that the dislocation pileups are relieved or prevented and that either cross slip or intersection of dislocations is rate controlling with stronger support for the latter. The determination of the rate-controlling mechanism at the higher temperatures is complicated by possible changes in defect structure due to thermal annealing, and therefore, the operative mechanism corresponds to a structure that may differ from the initial, as-deposited condition.