Ethylene/hindered phenol substituted norbornene copolymers: Synthesis and NMR structural determination

A new family of ethylene‐based copolymers with controlled amounts of a norbornene comonomer (N_ArOH) bearing a stabilizing antioxidant functionality (2,6‐di‐tert‐butyl phenol) was prepared. Due to unavoidable exo/endo equilibrium operative in N_ArOH comonomer, a complete and detailed NMR assignment of the structure of the prepared ethylene/N_ArOH copolymers was carried out for the determination of the exo/endo ratio inside the polymer. These novel functionalized comonomers can be considered suitable starting material for preparing ethylene‐based copolymers, with tunable comonomer content, as non‐releasing macromolecular antioxidant additives for specific application in safe food and/or drug packaging © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

圆片级低温富锡金锡键合

Sn-rich Au–Sn solder bonding has been systematically investigated for low cost and low temperature wafer-level packaging of high-end MEMS devices.The AuSn2 phase with the highest Vickers-hardness among the four stable intermetallic compounds of the Au–Sn system makes a major contribution to the high bonding shear strength.The maximum shear strength of 64 MPa and a leak rate lower than 4.9×10-7 atm·cc/s have been obtained for Au46Sn54 solder bonded at 310 ℃.This wafer-level low cost bonding technique with high bonding strength can be applied to MEMS devices requiring low temperature packaging.     

Conductive adhesive with transient liquid‐phase sintering technology for high‐power device applications

A highly reliable conductive adhesive obtained by transient liquid‐phase sintering (TLPS) technologies is studied for use in high‐power device packaging. TLPS involves the low‐temperature reaction of a low‐melting metal or alloy with a high‐melting metal or alloy to form a reacted metal matrix. For a TLPS material (consisting of Ag‐coated Cu, a Sn96.5‐Ag3.0‐Cu0.5 solder, and a volatile fluxing resin) used herein, the melting temperature of the metal matrix exceeds the bonding temperature. After bonding of the TLPS material, a unique melting peak of TLPS is observed at 356 °C, consistent with the transient behavior of Ag₃Sn + Cu₆Sn₅ → liquid + Cu₃Sn reported by the National Institute of Standards and Technology. The TLPS material shows superior thermal conductivity as compared with other commercially available Ag pastes under the same specimen preparation conditions. In conclusion, the TLPS material can be a promising candidate for a highly reliable conductive adhesive in power device packaging because remelting of the SAC305 solder, which is widely used in conventional power modules, is not observed.     

平行缝焊工艺的热效应研究

平行缝焊作为一种高可靠性的气密性密封方法,在陶瓷封装行业中有着愈发重要的应用。封焊过程中瞬间产生的高能量在完成密封的同时,会对陶瓷外壳造成很高的热应力残留,可能会对器件可靠性产生影响。介绍了平行缝焊的工作原理及工艺参数,并通过使用ANSYS软件对工艺过程中的各参数进行热仿真分析,研究平行缝焊工艺参数对陶瓷封装的热影响。     

压力传感器封装中的波纹膜片结构研究

针对压力传感器隔离式封装中的波纹膜片这一关键部件,采用有限元分析的方法研究了波纹膜片的厚度、波纹深度和波纹数目分别对最大压力约0.1 MPa下的压力传感器输出信号的影响,优化了波纹膜片结构的参数选择。通过对封装了不同波纹膜片的样品的测试与比较表明,较小的膜厚与波纹深度、较多的波纹数目有助于提高压力传感器的性能,从而验证了波纹膜片结构优化的正确性。     

数模混合高速集成电路封装基板协同设计与验证

介绍了数模混合高速集成电路(IC)封装的特性以及该类封装协同设计的一般分析方法.合理有效的基板设计是实现可靠封装的重要保障,基于物理互连设计与电设计协同开展的思路,采用Cadence APD工具以及三维电磁场仿真工具实现了特定数模混合高速集成电路(一款探测器读出电路)的封装设计与仿真论证,芯片封装后组装测试,探测器系统性能良好,封装设计达到预期目标.封装电仿真主要包含:封装信号传输通道S参数提取、电源/地网络评估,探测器读出芯片封装体互连通道设计能满足信号带宽为350 MHz(或者信号上升时间大于1 ns)的高速信号的传输.封装基板布线设计与基板电设计协同分析是提高数模混合高速集成电路封装设计效率的有效途径.     

铜锡合金纳米粒子的制备和性能研究

通过化学还原方法制备了铜锡合金纳米粒子,并研究分析了其的尺寸和热学性能。铜锡纳米粒子的X射线衍射分析结果显示,合成产物主要是锡纳米颗粒和铜锡合金(Cu6Sn5)纳米颗粒组成,且这些纳米粒子并未被氧化。其示差扫描量热法测得结果表明,本次合成的纳米颗粒的熔点为202.98 ℃,适合现代电子封装技术对低熔点封装材料的要求。     

A novel mechanical diced trench structure for warpage reduction in wafer level packaging process

The wafer warpage problem, mainly originated from coefficient of thermal expansion mismatch between the materials, becomes serious in wafer level packaging as large diameter wafer is adopted currently. The warpage poses threats to wafer handling, process qualities, and can also lead to serious reliability problems. In this paper, a novel mechanical diced trench structure was proposed to reduce the final wafer warpage. Deep patterned trenches with a depth about 100 μm were fabricated in the Si substrate by mechanical dicing method. Both experiment and simulation approaches were used to investigate the effect of the trenches on the wafer warpage and the influence of the geometry of the trenches was also studied. The results indicate that, by forming deep trenches, the stress on the individual die is decoupled and the total wafer warpage could be reduced. The final wafer warpage is closely related to the trench depth and die width. Trenched sample with a depth of 100 μm can decrease the wafer warpage by 51.4%.     

聚苯乙烯提取物的检测与评价

随着材料科学的迅速发展,聚合物材料以不同的形态越来越广泛地应用于食品包装中。但是由于聚合物材料自身的特性及其改性加工,导致了很多低分子量化合物的形成,因而给食品安全性带来很大隐患,也危害着人们的身体健康。为了解决这一问题,在选用材料前,必须分析聚合物材料中低分子化合物的迁移情况,考虑迁移过程对包材使用的影响。实验中选用正庚烷、8%乙醇、50%乙醇和蒸馏水作为食品模拟液,用气相色谱测定聚苯乙烯提取物的迁移量,进而将实验数据分析比较。结果显示,迁移量随着温度的升高和时间的延长而不断增加,溶剂种类的影响为:正庚烷>50%乙醇>8%乙醇>蒸馏水。