Correlation of excitation-wavelength dependent photoluminescence with the fractal microstructures of porous silicon

The correlation of the excitation-wavelength dependent photoluminescence with the fractal microstructures of porous silicon has been investigated. As the excitation wavelength increases from 340 to 650 nm, the photoluminescence of porous silicon redshifts from 500 to 780 nm. The excitation-wavelength dependent photoluminescence suggests the existence of a size distribution for the large number of silicon nanocrystallites in porous silicon. Using scanning electron microscopy and computer simulation, we have investigated the fractal features of the microstructures of porous silicon. Our results have demonstrated that the fractal features in the microstructures of porous silicon indicate the existence of a size distribution for the silicon nanocrystallites in porous silicon. The recorded excitation-wavelength dependent photoluminescence of porous silicon can be interpreted in terms of the bond-order-length-strength correlation theory.     

Ab Initio Study of Structural and Electronic Properties of Sodium Bromide

The structural and electronic properties of sodium bromide （NaBr） are investigated by the density functional theory （DFT） within the generalized gradient approximation （GGA） for the exchange and correlation energy. The equilibrium lattice constant, bulk modulus and its pressure derivative are obtained by fitting the calculated total energy to the third-order Birch-Murnaghan equation of state. The band structure along the higher symmetry axes in the Brillouin zone, the density of states （DOS） and the partial density of states （PDOS） are presented. The results have been discussed and compared with the available experimental and theoretical data.     

Pressure and Temperature Induced Phase Transition of ZnS from First-Principles Calculations

The pressure induced phase transition of ZnS from the wurtzite （WZ） and the zincblende （ZB） structures to the rocksalt （RS） structure and the temperature induced phase transition from the ZB structure to the WZ structure are investigated by ab initio plane-wave pseudopotential density-functional theory （DFT）, together with the quasiharmonic Debye model. It is found that the zero-temperature transition pressures from the WZ-ZnS and the ZB-ZnS to the RS-ZnS are 17.20 and 17.37 GPa, respectively. The zero-pressure transition temperature from the ZB-ZnS to the WZ-ZnS is 1199 K. All these results are consistent with the available experimental data. Moreover, the dependences of the normalized primitive cell volume V/V0 on pressure and thermal expansion coefficient α on temperature are also obtained successfully.     

Theoretical Prediction for Structural Stabilities and Optical Properties of SrS, SrSe and SrTe under High Pressure

An investigation on the structural stabilities and electronic properties of SrX （X =S, Se and Te） under high pressure is conducted using the first-principles calculation based on density functional theory （DFT） with the plane wave basis set as implemented in the CASTEP code. Our results demonstrate that the sequence of the pressure-induced phase transition of the three compounds is the NaCl-type （B1） structure （Fm3rn） to the CsC1- type （B2） structure （Pm3m）. The phase transition and the metallization pressures are determined theoretically. The pressure effect on the optical properties is discussed. The results are compared with the previous calculations and experimental data.     

Structures and Equation of State of ε-Fe under High Pressure

The equation of state （EOS） and the axial ratio c/a of ε-Fe at high pressures are investigated by using the gen- eralized gradient approximation （GGA） within the plane-wave pseudopotential density functional theory （DFT）. The results show that at the lower pressure, the EOS of ferromagnetic ε-Fe is consistent with the experimental result. While at higher pressure, the EOS of the nonmagnetic ε-Fe is in good agreement with the experimental result. Meanwhile, we find an obvious increase of the axial ratio c/a with pressure, and there is only a small increase with increasing temperature at high pressure.     

Ultrahigh-Pressure Equation of State for Copper at 0K

Based on the first-principles all-electron full-potential augmented-plane-wave plus local orbital method, an equation of state （EOS） at OK for copper up to 10000 GPa （10^8 bar） is presented. Our recommended EOS is in good agreement with the available experimental data. Furthermore, the agreement between theoretical EOS of hcp and fcc lattices at extremely compressed condition sets the foundation of spherical atom models for high density and high temperate plasmas.     

Adsorption and Reaction of CO on （100） Surface of SrTiO3 by Density Function Theory Calculation

Adsorption and reaction of CO on two possible terminations of SrTiO3 （100） surface are investigated by the first-principles calculation of plane wave ultrasoft pseudopotentiai based on the density function theory. The adsorption energy, Mulliken population analysis, density of states （DOS） and electronic density difference of CO on SrTiO3 （100） surface, which have never been investigated before as far as we know are performed. The calculated results reveal that the Ti-CO orientation is the most stable configuration and the adsorption energy （0.449eV） is quite small. CO molecules adsorb weakly on the SrTiO3 （100） surface, there is predominantly electrostatic attraction between CO and the surface rather than a chemical bonding mechanism.     

First-Principles Calculation of Electronic Structure and Optical Properties of Sb-Doped ZnO

The geometric structure, electronic structure, optical properties and the formation energy of Sb-doped ZnO with the wurtzite structure are investigated using the first-principles ultra-soft pseudo-potential approach of plane wave based upon the density functional theory. The calculated results indicate that the volume of ZnO doped with Sb becomes larger, and the doping system yields the lowest formation energy of Sb on the interstitial site and the oxygen site. Furthermore, Sb dopant first occupies the octahedral oxygen sites of the wurtzite structure. It is found that Sb substituting on oxygen site behaves as a deep acceptor and shows the p-type degenerate semiconductor character. After doping, the electron density difference demonstrates the considerable electron charge density redistribution, which induces the effect of Sb-doped ZnO to increase the charge overlap between atoms. The density of states move towards lower energy and the optical band gap is broadened. Our culated results are in agreement with other experimental results and could make more precise monitoring and controlling possible during the growth of ZnO p-type materials.     

Structural, Elastic and Electronic Properties of ReO2

Structural, elastic and electronic properties of ReO₂ are investigated by first-principles calculations based on density functional theory. The ground stateof ReO₂ has an orthorhombic symmetry which belongs to space group Pbcn with a=4.7868Å b=5.5736Å, and c=4.5322Å. The calculated bulk moduli are 322GPa, 353GPa, and 345GPa for orthorhombic, tetragonal, and monoclinic ReO₂, respectively, indicating that ReO₂ has a strong incompressibility. ReO₂ is a metal ductile solid and presents large elastic anisotropy. The obtained Debye temperatures are 850K for orthorhombic, 785K for tetragonal, and 791K for monoclinic ReO₂.     

Mechanical Properties and Electronic Structures of Cotunnite TiO2

Based on the first-principles plane-wave basis pseudopotential calculations, we investigate mechanical properties and electronic structures of the hardest known oxide, cotunnite TiO2. The calculated results show that cotunnite TiO2 has the highest bulk modulus （348 GPa） and hardness （32 GPa） among the high-pressure phases of TiO2, but its mechanical properties are not superior to those of c-BN. Moreover, the high hardness of cotunnite TiO2 can be understood from both the dense crystal structure （high valence electron density and short bond lengths） and the unusual mixtures of covalent and ionic bonding of Ti-O.