MSM结构ZnO/Cu薄膜的接触特性

利用脉冲激光沉积(PLD)法在Si(111)衬底上分别生长了ZnO薄膜和Cu薄膜, 用Cu薄膜作电极,研究了ZnO薄膜与Cu薄膜的接触特性。分别用X射线衍射仪、扫描电子显微镜和I-V测试的方法对样品的晶体质量、结构和电学性质进行了测试。结果表明:样品中ZnO薄膜和Cu薄膜均具有高度的择优取向;当Cu和 ZnO直接接触时,样品的I-V特性是非线性的;当Cu和 ZnO之间通过ZnO:Cu层间接接触时形成良好的欧姆接触,而且退火后欧姆接触性能明显提高,电阻率降低约2/3。本研究为价格低廉的Cu电极成为ZnO基器件的欧姆电极提供了一定的依据。     

光纤通信技术讲座--(七):光探测和光接收机

介绍光探测器基本原理、器件和数字光接收机构成、信噪比和性能.     

用LCD控制器实现EL显示屏的控制

本文介绍用LCD控制器MSM6255实现对EL显示屏的控制，详细介绍了EL显示屏的驱动电路、接口电路及其软件设计。将CPLD用于逻辑电路设计中，简化了硬件电路，使EL显示屏的使用方便可行。     

U型凹槽电极硅MSM结构光电探测器的研制

为了提高硅MSM结构光电探测器的光电响应度,制备了U型凹槽电极结构的探测器.5 V偏压下,对650 nm波长入射光的绝对光电响应度测试表明,凹槽电极结构的探测器最大光电响应度值为0.486 A/W,比同样尺寸的平版结构光电探测器提高了约6倍.文中也对比了具有抗反射膜和不具有抗反射膜的器件相对响应光谱的差别,并且比较分析了叉指间隙分别为5 μm和10 μm器件光电响应的不同.     

点阵LCD控制器MSM6222B-xx及其应用

MSM6222B_xx是用低功耗CMOS硅栅工艺制造的点阵LCD控制器。它与4位/8位微控制器相结合可控制点阵字符型LCD上的字符显示。这个LSI内含16点COMMON(公共端 )驱动器、40点SEGMENT(段 )驱动器、显示数据RAM、字符产生器RAM、字符产生器ROM以及控制电路。文中介绍了MSM6222B -xx的原理、引脚排列和功能 ,给出了它与单片机的连接电路     

High-speed Si-based metal-semiconductor-metal photodetectors with an additional composition-graded i-a-Si1−xGex:H layer

The response-speed of Si-based metal-semiconductor-metal (MSM) photodetectors was improved by depositing a composition-graded intrinsic hydrogenated amorphous silicon–germanium (i-a-Si_1−xGe_x:H) layer on crystalline silicon (c-Si). In contrast to the non-composition-graded one (using intrinsic hydrogenated amorphous silicon (i-a-Si:H) layer), the full width at half maximum (FWHM) and fall time of the photodetector transient response were improved from 145.2, 404.6 to 107.6, 223.4 ps respectively. The experimental results showed that the device responsivity and quantum efficiency were increased from 0.329 (A/W) and 0.492 to 0.414 and 0.619 respectively by the employed composition-graded technique. We propose that this enhancement is due to a smoother barrier that is formed at the c-Si and i-a-Si_1−xGe_x:H interface. A lower deposition temperature of i-a-Si_1−xGe_x:H layer could be used to further reduce the fall time of the device transient response from 315.6 (250 °C) to 97.6 (180 °C) ps. To improve the contact properties between Cr electrode and i-a-Si_1−xGe_x:H layer, an annealing technique in hydrogen ambient was employed. The device knee voltage, which is the applied voltage at which the device current start to enter the saturation region in its current (log-scale) versus applied voltage characteristics, could be reduced to around 3.5 V after annealing.     

4H-SiC metal–semiconductor–metal ultraviolet photodetectors with Ni/ITO electrodes

Indium–tin-oxide (ITO), Ni/ITO and Ni layers were deposited onto glass and/or SiC substrates by DC sputtering under different deposition conditions. SiC-based metal–semiconductor–metal (MSM) ultraviolet (UV) photodetectors were also fabricated using these materials as contract electrodes. It was found that ITO film deposited without oxygen gas could provide us a better optical property and a better electrical property. It was also found that the dark current of the ITO/SiC MSM UV photodetector was extremely large. Furthermore, it was found that the insertion of a 10 nm Ni layer could significantly reduce the dark current. It was also found that the photo-current to dark current contrast was more than 3 orders of magnitude with a 5 V applied bias for the SiC MSM UV photodetector with 10 nm Ni/90 nm ITO contact electrodes. With an even larger 40 V applied bias, the photo-current to dark current contrast could almost reach 4 orders of magnitude.     

调制解调器MSM6882及其在无线数据通信中的应用

MSM6882是日本OKI公司生产的、采用最小频移键控方法的数据调制解调器。该器件内含接收、发送和时钟产生电路，且数据传输波特率可在1200bps和2400bps中选择。文中介绍了MSM6882的主要性能和工作原理，给出了MSM6882在无线通信中的应用电路设计。     

MSM结构平面及掩埋叉指电极间电场的分布特性

提出了一种新型具有掩埋电极的金属-半导体-金属(MSM)探测器原型器件结构,并用数值计算的方法研究了其激活层内电场的分布特性,讨论了掩埋电极深度对电场分布的影响,并与传统平面叉指电极结构进行比较,得出该结构对器件性能改善具有重要的作用.     

GaAs MSM结构光电探测器的光电特性研究

报导了作者研制的GaAs MSM—PD的直流及脉冲光电特性,对不同材料、不同结构尺寸的器件进行了试验和分析,测试结果:最大暗电流1.9nA,最高灵敏度为0.25A/W,FWHM小于110 ps(10V下),有较好的光电流和光功率线性关系,通过实验研究,发现对插指结构的器件在同一面积下受光面积与单位面积上的光电流存在最优化选择。