Multi-scale mapping algorithm for INI cancellation and a novel mixed-numerologies OFDM transceiver

OFDM with mixed-numerologies enhances the system flexibility effectively to meet the demands of diversified application scenarios. However, the coexistence of waveforms with different numerologies leads to serious inter-numerology interference (INI), and the corresponding relationship between the number of guard subcarriers and the power of INI needs to be considered for scheduling subcarriers. In this paper, we propose a multi-scale mapping (MSM) and INI cancellation (MSM-INIC) algorithm as well as the corresponding de-MSM algorithm for mixed-numerologies OFDM system. Based on the proposed algorithms, we provide a novel transceiver in the scenario of multi-path fading channel, in which subcarrier scheduling does not need to consider whether the guard band is allocated. In the proposed transmitter, an additional MSM-INIC module is employed to pre-compensate signal distortion for downlink, and in the receiver, a de-MSM module is applied to de-map the received signals for recovering the original numerologies. Furthermore, we reveal the inherent property of the mapped signals, and propose a low computational complexity de-MSM algorithm accordingly. Simulation results verify the superiority of the proposed transceiver in BER performance as well as spectrum efficiency even without any guard band.     

Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates

Nitride-based metal–semiconductor–metal ultraviolet (UV) photodetectors prepared on Si (1 1 1) substrate with stacked buffer layers were proposed and prepared. With 5 V applied bias, it was found that dark current of the fabricated device was only 7.95×10⁻¹² A. With an applied bias of 10 V, it was found that peak responsivity was 0.06 A/W, corresponding to quantum efficiency of 21.2% while UV/visible rejection ratio was 244. With 5 V applied bias, it was found that noise equivalent power, NEP and detectivity, D*, of our detector were 1.70×10⁻¹³ W and 1.18×10¹³ cm Hz^0.5 W⁻¹, respectively.     

Atomistic evaluation of the stress concentration factor of graphene sheets having circular holes

Stress concentration factor concept has been developed for single-layered graphene sheets (SLGSs) with circular holes through an atomistic point of view by the application of molecular structural mechanics (MSM) approach. In this approach the response of SLGSs against unidirectional tensile loading is matched to the response of a frame-like macro structure containing beam elements by making an equivalence between strain energies of beam elements in MSM and potential energies of chemical bonds of SLGSs. Both chirality and size effects are considered and the atomistic evaluation of stress concentration factor is performed for different sizes of circular holes. Also, molecular dynamics simulations are implemented to verify the existence and location of the predicted stress concentration. The results reveal that size effects and the diameters of circular holes have a significant influence on the stress concentration factor of SLGSs and armchair SLGSs show a larger value of stress concentration than zigzag ones.     

Structural and dc conduction studies on PbTe thin films

Lead Telluride (PbTe) films of different thickness were prepared onto precleaned glass substrates under the pressure of 2?×?10^?5 Torr by thermal evaporation. X-ray diffraction technique, scanning electron microscopy, and current–voltage characteristics were used to characterize the films. The structural analysis of the films was carried using X-ray diffractometer. The surface morphology was analyzed by using scanning electron microscope. The dc electrical conduction mechanism in vacuum-evaporated Al/PbTe/Al thin film sandwich system in the thickness range 500–5,000 Å at different temperature (303–483 K) was found to be a modified Poole–Frenkel type. The results of variation of activation energy with applied voltage and thickness are discussed.     

金刚石膜MSM紫外探测器光谱响应拟合分析

应用 MSM结构光电探测器相对光谱响应的理论公式 ,得到金刚石膜 MSM紫外光电探测器相对光谱响应理论曲线 ,与实验曲线进行比较 ,发现两者吻合得很好。探测器光谱响应的截止波长都在 2 2 0～ 2 3 0 nm范围 ,紫外光与可见光的相对响应度相差一个数量级。根据 MSM结构光电探测器光谱响应曲线拟合出金刚石薄膜厚度、少子扩散长度等表征参数 ,探讨金刚石膜吸收层反射率、吸收系数、金刚石的晶粒大小及金属电极叉指指宽、指距等参数对金刚石膜 MSM光电探测器光谱响应和量子效率的影响。     

基于MSM结构的表面等离子体共振光纤折射率传感器

基于表面等离子体共振(SPR)效应,设计了一种基于多模-单模-多模(MSM)结构的光纤折射率传感器。采用光纤熔接的方式构成MSM结构,并且在单模光纤的表面涂覆二氧化钛/银(TiO2/Ag)复合膜构成传感单元。利用FDTD Solutions仿真分析了单模光纤长度与金属膜厚度对传感器性能的影响。结果表明:单模光纤长度越长,共振深度越深;TiO2/Ag复合膜中Ag膜厚度为50nm,TiO2膜厚度为20nm时,传感器性能最优,在1.33~1.41环境折射率范围内,传感器的灵敏度约为6 875nm/RIU。实验结果表明该光纤折射率传感器结构制作工艺简单、灵敏度高。     

MSM光探测器直流特性的二维分析

基于有限差分方法对金属-半导体-金属（MSM）光探测器进行了二维分析，得到有明确物理意义的模拟曲线和结论，并结合模拟结果对MSM光探测器的光电直流特性进行了分析．全部模拟工作都是基于半导体物理的基本微分方程完成的，这对于未来优化设计探测器的性能和结构有很大的意义．     

Technology and characterisation of GaAsN/GaAs heterostructures for photodetector applications

The nitrogen-containing conventional A^IIIB^V semiconductor alloys, so-called diluted nitrides (A^IIIB^V-N), have been extensively studied recently. Unusual properties of these materials make them very promising for applications in lasers and very efficient multijunction solar cells. This work presents the technology and properties of undoped GaAs_1-xN_x/GaAs heterostructures used as active regions in the construction of metal-semiconductor-metal (MSM) photodetectors. The atmospheric pressure metal organic vapour phase epitaxy (APMOVPE) was applied for growing MSM test structures. Their structural and optical properties were examined using high resolution X-ray diffraction (HRXRD), photoluminescence (PL), and photoreflectance spectroscopy (PR). Chemical wet etching was applied for forming an active region and a multifinger Schottky metallization was used as MSM contacts. Dark and illuminated current-voltage characteristics were measured. Based on the obtained results, the main detector parameters as responsivity and spectral response were estimated     

高阻氮化镓外延层的异常光吸收

通过光伏谱(PV)的测量发现,采用MOCVD方法生长的非故意掺杂GaN外延膜,电阻较大的样品在带隙内有明显的异常光吸收.吸收峰的能量位置表明这种异常吸收可能与激子有关.在这些高阻样品上制作的MSM型探测器,当入射光照射不同位置,其光谱响应显示了区域不一致性.20 V偏压下反向偏置结处的光谱响应比正向偏置结处的光谱响应大一个数量级左右,峰值响应的位置也发生明显红移现象,红移的能量约为28 meV,并且几乎不随环境温度变化.根据MSM结构的电场分布不均以及带边和激子响应对电场的依赖性不同,MSM型探测器的这种 关键词： GaN 激子 光伏谱 光谱响应     

Absorption enhancement of 980 nm MSM photodetector with a plasmonic grating structure

We present finite-difference time-domain (FDTD) simulation to analyze the optical absorption enhancement of metal-semiconductor-metal (MSM) photodetectors employing plasmonic grating structures. Simulation results show that the combination of a subwavelength aperture and a nano-structured metal grating results in up to 16 times enhancement in optical absorption, in comparison to conventional MSM photodetector structures employing only a subwavelength aperture.