Evaluation of the corrosion resistance of electroless Ni-P and Ni-P composite coatings by electrochemical impedance spectroscopy

Electroless Ni-P composite coatings have gained a good deal of popularity and acceptance in recent years as they provide considerable improvement of desirable qualities such as hardness, wear, abrasion resistance, etc. The disagreement among researchers on the corrosion behaviour of these coatings warrants a thorough investigation. Among the various techniques available for the determination of corrosion resistance, electrochemical impedance spectroscopy (EIS) is considered to be superior as it provides not only an assessment of the corrosion resistance of different deposits but also enables the mechanistic pathway by which the deposits become corroded to be determined. The present investigation focuses on the evaluation of the corrosion resistance of electroless Ni-P and Ni-P-Si₃N₄, Ni-P-CeO₂ and Ni-P-TiO₂ composite coatings produced using an acidic hypophosphite-reduced electroless nickel bath, using EIS. The study makes evident that the same fundamental reaction is occurring on all the coatings of the present study but over a different effective area in each case. The charge transfer resistance of electroless Ni-P and Ni-P composite deposits are in the range 32,253–90,700 Ω cm², whereas the capacitances of these coatings are in the range 11–17 μF/cm². The improved corrosion resistance obtained for electroless Ni-P and Ni-P composite coatings is due to the enrichment of phosphorus on the electrode surface, which enables the preferential hydrolysis of phosphorus over that of nickel. The better corrosion resistance obtained for electroless Ni-P composite coatings can be ascribed to the decrease in the effective metallic area prone to corrosion. Among the three electroless Ni-P composite coatings, the corrosion resistance is in the following order: Ni-P-CeO₂=Ni-P-Si₃N₄>Ni-P-TiO₂. Electronic Publication     

面向高速应用的GaN基HEMT器件

工作在毫米波、亚毫米波频段的固态功率放大器可广泛应用于无线通信、汽车雷达等电子系统。氮化物材料具备禁带宽度大、电子速度高等特点,使得GaN 基HEM T 器件成为面向高频器件和高速数字电路等高速应用的理想候选器件。但是为实现更佳的器件指标,仍需要进行多层次的设计和优化。重点讨论了面向高速应用的GaN 基器件所面临的挑战,如载流子限域性、电子速度以及在等比例缩小规律下的导通电阻等问题。分析表明,这些问题的解决将使GaN 基器件在高速、高频等领域得到广泛应用。     

An improved temperature-dependent large signal model of microwave GaN HEMTs

Accurate modeling of the electrothermal effects of GaN electronic devices is critical for reliability design and assessment. In this paper, an improved temperature-dependent model for large signal equivalent circuit modeling of GaN HEMTs is proposed. To accurately describe the thermal effects, a modified nonlinear thermal sub-circuit which is related not only to power dissipation, but also ambient temperature is used to calculate the variations of channel temperature of the device; the temperature-dependent parasitic and intrinsic elements are also taken into account in this model. The parameters of the thermal sub-circuit are extracted by using the numerical finite element method. The results show that better performance can be achieved by using the proposed large signal model in the range of -55 to 125℃ compared with the conventional model with a linear thermal sub-circuit.     

基于StrongARM SA1100的嵌入式系统中触摸屏驱动设计

触摸屏控制器简化了对触摸屏的控制,但他采用串行通信,这样触摸屏控制器的转换精度越高,从他读出触摸点坐标值所花的时间就越多。为了减少这种时间,以一个基于StrongARM SA1100的嵌入式系统应用实例介绍了一种典型的电阻式触摸屏并行通信硬件驱动电路以及在此基础上的软件驱动程序设计方法和流程。有利于操作系统对触摸屏的控制。     

印制电路板应变测量用应变片选用方法研究

应变测量由于它的众多优点在电子产品可靠性领域的应用越来越广泛,但电阻应变片的类型繁多,功能各异,以至于使用者很难找到满足自己测试目的和测试环境的应变片。文章提出的选用方法从应变片种类、敏感栅材料、基底材料、电阻值、尺寸、敏感栅结构型式和测试量境温度等方面,综合考虑并结合生产商的应变片型号编码系统,可以快捷地找到适合的印制电路板应变测量用应变片,同时针对绝大多数电子制造商不具备专业应变片检定设备的现实,介绍了一套简单可行的应变片检定工具,并通过两个实例证明该检定方法的可行性。     

山区弱电系统的接地设计与降阻措施探讨

通过对山区弱电系统在接地上普遍存在的土壤电阻率高,可用场地小,地势险峻、地形复杂等因难因素的分析;讨论了山区弱电系统在接地设计和降阻改造的措施。提出了综合地利用自然接地体,在适当地区设置外延接地及沿道路外延降阻方法。通过分析、讨论认为只要充分采取合理、有效的降阻措施,是能够有效降低山区弱电系统的接地电阻,保证弱电系统安全运行。     

基于插入WO3缓冲层并五苯有机场效应晶体管性能的研究

The pentacene-based organic field effect transistor （OFET） with a thin transition metal oxide （WO3） layer between pentacene and metal （AI） source/drain electrodes was fabricated. Compared with conventional OFET with only metal AI source/drain electrodes, the introduction of the WO3 buffer layer leads to the device performance enhancement. The effective field-effect mobility and threshold voltage are improved to 1.90 em2/（V.s） and 13 V, respectively. The performance improvements are attributed to the decrease of the interface energy barrier and the contact resistance. The results indicate that it is an effective approach to improve the OFET performance by using a WO3 buffer layer.     

大功率VDMOS（200V）的设计研究

介绍了大功率VDMOS（200V）的设计方法。对设计参数进行了理论分析,并使用仿真工具对设计参数进行了验证和优化。设计中主要考虑了漏源电压和导通电阻等参数指标,通过器件和工艺的仿真,确定了该器件合理的参数范围：外延厚度为20μm,外延电阻率为5Ω·cm栅氧厚度为52nm;P阱注入剂量为3×3^12cm^2,推阱时间65min。将流片结果与仿真结果进行了比较。     

用二次离子质谱和扩展电阻探针技术测量硅中注入硼的深度分布及扩展电阻探针技术分辨率的估算

利用二次离子质谱和扩展电阻探针技术测量了硅中注入硼的深度分布 .在适当的测量深度 ,用扩展电阻探针技术测得的结果对二次离子质谱技术测量的结果进行了标定 ,从而得到硅片中硼原子的深度分布 .用近似模型估算了扩展电阻探针针尖半径对测试分辨率的影响 .若探针针尖半径为r0 ,测量斜面的角度为 ξ ,在用扩展电阻探针技术测量载流子浓度的深度分布时 ,可以近似认为深度分辨率为 7 86r0 sinξ.还定性讨论了样品表面耗尽层对扩展电阻探针技术的影响.     

基于OTRA的通用双二阶滤波器设计

提出了把通用双二阶滤波器视为负反馈放大器的观点,根据反馈电路的基本方程,利用3个MOS电阻、2个电容、2个运算跨阻放大器(OTRA)构成了通用双二阶滤波器,该滤波器不仅可从同一端口输出信号,从不同端口输入信号,而且可获得低通、高通、带通、带阻和全通输出.该电路结构简单,便于电控调谐.