一种深亚微米MOSFET高频噪声模型

基于深亚微米MOSFET的短沟道效应(迁移率退化、热载流子效应、体电荷效应、沟道长度调制效应等),提出了一种高频沟道噪声分析模型.该分析模型不仅具有较高的精确性,而且只包括MOSFET的工艺参数和电学参数,不含有微积分和拟合参数,较大地提高了MOSFET高频噪声模型的易用性.根据MOSFET的高频等效电路,得出了MOSFET的噪声系数模型.实验结果证明,提出的深亚微米MOSFET高频噪声模型的仿真结果与测试结果的平均误差不到0.4 dB,并与其他高频沟道噪声分析模型进行了比较.     

低压VDMOS氧化层厚度与特征电阻的优化设计

介绍VDMOS阈值电压的定量计算及氧化层厚度对他的影响,及VDMOS的氧化层厚度与特征电阻RONA的关系,讨论了栅氧化层的厚度对特征电阻的影响并进行了简单计算。此外,讨论了最新的VDMOS结构和制造技术,对器件阈值与特征电阻进行了优化。     

VC中图像全屏显示及打印算法的实现

在开发图像显示程序以及视频应用程序时,常常需要全屏显示特性。介绍如何实现图像的全屏显示,以及在非全屏下,如何实现对任一图像的完整显示,并提供了相应的快捷切换键,同时也实现了对任一图像的完整打印算法。本文涉及的算法主要是针对真彩色图像进行处理的,考虑处理速度上的要求,在全屏显示算法中采用了最邻近插值算法进行图像缩放变换。综合比较证实这种算法比较适用。     

新一代纳米级器件物理特性仿真工具——SenTaurus Device

介绍了Synopsys Inc.新近推出的新一代纳米层次器件物理特性仿真工具——SenTaurus Device的功能特点以及进行器件物理特性仿真的典型流程。重点介绍了为实现nm级器件物理特性的模拟引入的诸多近代器件物理模型。利用SenTaurus Device对基于Sentaurus Process生成的一个90nm NMOS器件进行了器件物理特性仿真,并给出了相应结果。     

Reduction of gate-to-channel tunneling current in FinFET structures

In this work, the gate-to-channel leakage current in FinFET structures is experimentally studied in comparison with quasi-planar very wide-fin structures, and as a function of the fin width. Devices with both doped and undoped channels and different gate stacks are studied. Experimental evidence for the reduction of gate tunneling current density in narrow FinFET structures compared to their counterpart quasi-planar structures is reported for the first time. This gate current reduction is observed for both n-channel and p-channel devices and is found to be stronger for HfO₂ than for SiON. For a given gate dielectric, the above gate current improvement in FinFETs enhances with decreasing the fin width. For SiON with an equivalent oxide thickness of 1.6 nm in undoped n-channel devices, it varies from factor of 2.3–4.3, when the fin width decreases from 75 to 25 nm. The possible reasons for the observed effect are discussed.     

纳米尺度全耗尽SOI MOSFET阈值电压的修正模型

针对纳米器件中出现的量子化效应,考虑了薄层全耗尽SOI MOSFET沟道反型层电子的量子化,研究了反型层量子化效应对阈值电压的影响。结果表明,沟道反型层的量子化效应导致阈值电压增大,推导并给出了纳米尺度全耗尽SOI MOSFET的阈值电压修正模型。     

Comparison Study on Three Different Reconfigurable Optical Add Drop Multiplexer Architectures

In this paper, we present the evolution of reconfigurable optical add drop multiplexer（ROADM） technologies, and compare three main ROADM architectures available on the market today. Three archhectures include broadcast-select and demux-switch-mux[and the integrated version planar lightwave circuit（PLC）] and wavelengths-selective switch.     

以太网交换机测试方法的研究

根据以太网交换机的测试需求，考虑以太网交换机的技术特点，研究了以太网交换机的性能测试、功能测试、协议一致性测试、和稳定性测试等测试方法。     

大规模集成芯片IR2130触发器

详述了芯片内各环节的工作原理及所起作用,阐释了电路悬浮的工作情况,结合逆变器主回路,给出整个触发系统的电路框图,特别是对各个保护环节做出了深入的分析。虽未涉及芯片的具体应用,却为应用提供了坚实的理论基础,为全面掌握本芯片提供了可能性。     

Magnetoconductivity of Hubbard bands induced in silicon MOSFETs

Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence of Coulomb interactions. We used magnetoconductivity measurements to provide evidence for the existence of Hubbard bands and determine the nature of the states in each band.