Convergence of multistep methods for Volterra functional differential equations

Summary This paper deals with the convergence of nonstationary quasilinear multistep methods with varying step, used for the numerical integration of Volterra functional differential equations. A Perron type condition (appearing in the differential equations theory) is imposed on the increment function. This gives a generalization of some results of Tavernini ([19–21]).     

Generalized Runge-Kutta methods of order four with stepsize control for stiff ordinary differential equations

Summary GeneralizedA()-stable Runge-Kutta methods of order four with stepsize control are studied. The equations of condition for this class of semiimplicit methods are solved taking the truncation error into consideration. For application anA-stable and anA(89.3°)-stable method with small truncation error are proposed and test results for 25 stiff initial value problems for different tolerances are discussed.     

钟控神经MOS管的改进及其在多值电路中的应用

首先对钟控神经MOS管进行研究,提出了相应的改进方法.然后采用此改进的钟控神经MOS管设计了一种新型多值触发器.与传统的触发器相比较,此多值触发器具有结构简单、速度快、功耗低等特点;而且无需改变电路结构就可实现不同基的多值触发器.PSPICE模拟证明了所设计的电路具有正确的逻辑功能.     

表面钝化对HfTiON栅介质Ge MOS电容性能的影响

通过NO、N2O对Ge衬底进行表面钝化,生长GeOxNy界面层,然后采用反应磁控共溅射方法制备HfTiN薄膜,并利用湿N2气氛退火,将HfTiN转化为HfTiON高κ栅介质.研究了表面钝化对MOS器件性能的影响,结果表明,湿NO表面钝化能改善界面质量,有效降低MOS电容的栅极漏电流,增强器件的可靠性.     

MOS晶体管的阈值电压不匹配特性

集成电路中器件的匹配性对于模拟电路和数字电路的设计有着很重要的影响,而现在重要的是还缺乏精确的器件匹配的模型。在模拟集成电路设计中,MOS管阈值电压的匹配特性对集成电路尤其是电流Ids的大小有着重要的影响。基于短沟道系列模型,MOS氧化层中的固定电荷和杂质原予服从泊松分布,分析了NMOS和PMOS器件不匹配的物理原因,并验证σVT/VT遵循与1/(?)成比例的结论。     

注BF^＋2MOS电容的电离辐射效应

着重研究了γ辐照后,不同偏置情况下,N—Sub MOS电容的高频C—V曲线随B_2~+注入剂量的变化,并对实验结果进行了分析讨论。     

薄栅氮化物的击穿特性

研究了含 N MOS薄栅介质膜的击穿电场和电荷击穿特性。结果表明 :MOS栅介质中引入一定的 N后 ,能提高介质的电荷击穿强度 ,电荷击穿强度受 N2 O退火温度的制约 ;N对薄栅介质的击穿电场强度影响甚微 ,击穿电场受栅偏压极性的制约。用一定模型解释了实验结果     

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

Al₂O₃, HfO₂, and composite HfO₂/Al₂O₃ films were deposited on n-type GaN using atomic layer deposition (ALD). The interfacial layer of GaON and HfON was observed between HfO₂ and GaN, whereas the absence of an interfacial layer at Al₂O₃/GaN was confirmed using X-ray photoelectron spectroscopy and transmission electron microscopy. The dielectric constants of Al₂O₃, HfO₂, and composite HfO₂/Al₂O₃ calculated from the C-V measurement are 9, 16.5, and 13.8, respectively. The Al₂O₃ employed as a template in the composite structure has suppressed the interfacial layer formation during the subsequent ALD-HfO₂ and effectively reduced the gate leakage current. While the dielectric constant of the composite HfO₂/Al₂O₃ film is lower than that of HfO₂, the composite structure provides sharp oxide/GaN interface without interfacial layer, leading to better electrical properties.     

射频微波晶体管的发展现状及分析

对当前各种类型射频微波晶体管的结构特点、性能和应用情况进行了分析和综述.对晶体管的发展历史进行了全面而细致的回顾,指明了今后射频微波晶体管的发展特点和发展趋势,得出了射频微波晶体管的选型原则.     

应用于DBS移动接收中的5位数字移相器——低成本、Ku波段

提出了一种应用于DBS移动接收中的5位数字移相器的设计方案,并通过实验验证了其实际性能。该移相器采用加载线型和反射型移相原理,首先应用ADS软件进行设计仿真;仿真结果显示该移相器具有频带内高移相精度、低插入损耗和低VSWR等性能,符合设计要求。最后使用Agilent矢量网络分析仪对实物进行测试,进而验证了设计方案的正确性。