低电压驱动的硅基Ka波段级联式MEMS移相器

通过在共平面波导上周期性地分布微机械电容,外加电压驱动改变电容值,可实现级联式MEMS移相器.本文讨论了优化相移特性对共平面波导特性阻抗及下拉电压的要求,通过工艺参数优化制备了高阻硅基上的Ka波段级联式MEMS移相器,测试结果表明制备器件具有较低的驱动电压,8V时即产生明显的相移量,在36GHz处15V驱动电压时相移量为118°,25V时为286°.对微结构弹性膜的机械振动寿命测试表明,13级级联的MEMS移相器所有弹性膜同步振动的寿命为3×10⁶次.为器件的实用化提供了重要保障.     

束变换环孔激光谐振腔的环束场传输差分计算

 通过使用新的坐标变量和光场的表达形式，推导了新坐标系下环束场传输的偏微分方程，给出了相应差分方程的截断误差和稳定性条件，使得环束场传输计算速度大幅提高；使用二阶精度的Crank-Nicolso差分方法对束变换环孔激光谐振腔的环束场传输进行了计算，并与W.D.Murphy和M.L.Bernabe所给M-B积分近似方法的计算结果进行了比较，证实了该方法无论计算速度和精度都优于M-B积分近似方法。     

微纳米分子系统研究领域的最新进展--IEEE NEMS 2013国际会议综述

2013年4月7日至10日，第八届IEEE国际纳米/微米工程及分子系统大会(IEEE-NEMS 2013)在中国苏州市召开[1-2]，来自世界各地的360多位专家、学者齐聚一堂，就微纳研究领域的微/纳米制造和计量、微/纳米传感器、执行器和系统、纳米医学、微/纳流体、生物芯片、纳米材料、碳纳米管、石墨烯器件、微纳传热器件、能量采集器等多个方向展开了学术讨论和交流，充分展示了国内外在以上研究领域的最新研究成果、热点和动态，并对其发展趋势进行了分析。NEMS 2013国际会议的成功举办表明，以微/纳米分子系统等为代表的研究领域已成为高科技的重要代表，并极大地影响着世界的发展和人类生活。     

A 10-MHz SOI-Based Face Shear Square Micromechanical Resonator

A 10-MHz face shear (FS) square micromechanical resonator based on silicon-on-insulator (SOI) technology is presented in this paper. In order to examine the improvement of quality factor as well as motional resistance Rx in this structure, the center-stem anchor is employed in this study. The benefit of anchoring the square in the center, which is the nodal point, is that the energy losses through the anchor can be minimized. Hence, a quality factor value of 2.0 million and the motional resistance of 8.2 kΩ can be obtained with an FS mode resonator via finite element (FE) simulation. The results show the significance of the FS mode in this design, not only in its structure but also in its square-extensional mode and Lame-mode. Additionally, an SOI-based fabrication process is proposed to support the design.     

Optical characterization of high speed microscanners based on static slit profiling method

Optical characterization of high-speed microscanners is a challenging task that usually requires special high speed, extremely expensive camera systems. This paper presents a novel simple method to characterize the scanned beam spot profile and size in high-speed optical scanners under operation. It allows measuring the beam profile and the spot sizes at different scanning angles. The method is analyzed theoretically and applied experimentally on the characterization of a Micro Electro Mechanical MEMS scanner operating at 2.6 kHz. The variation of the spot size versus the scanning angle, up to ±15°, is extracted and the dynamic bending curvature effect of the micromirror is predicted.     

基于耦合T型空腔的多重法诺共振现象

提出由T型空腔和挡板组成的两种金属-电介质-金属(MIM)波导结构,分别为:正T型空腔结构和倒T型空腔结构,并应用有限元法系统地研究了该结构的透射特性.对于正T型空腔结构,仿真结果出现了双重法诺共振现象,并且共振波长可以通过改变T型空腔长度和高度进行调节.该结构有助于设计成敏感度达到1 620nm/RIU、品质因数为5.4×10~4的纳米传感器.对于倒置T型空腔,在波导中产生了多重法诺共振现象,其敏感度可达1 560nm/RIU,品质因数为9.37×104.该结构有望在光学集成回路,特别是纳米传感器、光束分路器方面具有广泛应用.     

圆片级低温富锡金锡键合

Sn-rich Au–Sn solder bonding has been systematically investigated for low cost and low temperature wafer-level packaging of high-end MEMS devices.The AuSn2 phase with the highest Vickers-hardness among the four stable intermetallic compounds of the Au–Sn system makes a major contribution to the high bonding shear strength.The maximum shear strength of 64 MPa and a leak rate lower than 4.9×10-7 atm·cc/s have been obtained for Au46Sn54 solder bonded at 310 ℃.This wafer-level low cost bonding technique with high bonding strength can be applied to MEMS devices requiring low temperature packaging.     

Design,fabrication and characterization of miniature RF MEMS switched capacitor based phase shifter

This paper aims to present in detail the design, fabrication and the various characterization techniques adopted in realizing a novel miniature-size switched capacitor based phase shifter. The work strives to provide an all-round development of a DMTL (Distributed MEMS Transmission Line) based phase shifting unit yielding an overall phase shift of 15° at a frequency of 15 GHz. The RF MEMS (Radio Frequency Micro Electro Mechanical Systems) Switched Capacitor based phase shifter has highly miniaturized dimensions, and is capable of solving many limitations to which the conventional Switched Capacitors are mostly susceptible. This miniature RF MEMS switched capacitor actuates at a low actuation voltage of 12 V, exhibits a fundamental frequency of vibration as high as 1.468 MHz and a switching time of 1.4 µs which is an improvement over the other reported designs. Various characterization results seem to validate the simulations.     

Coupling influence on the refractive index sensitivity of photonic wire ring resonator

By taking the coupling effect into consideration, we study the resonance condition of a photonic wire microring resonator (PWRR) sensor and compare our results with the previous work. Simulation results show that the resonant wavelength and sensitivity strongly depend on the coupling strength. The difference caused by the coupling effect can be up to tens of nanometers for the resonant peak position and tens of nm/RIU for the sensitivity in a silicon-on-insulator (SOI) PWRR. Such a giant influence from coupling effect cannot be disregarded and should be considered seriously for the design and application of PWRRs. It also shows an alternative tuning technique by controlling the coupling strength.     

Elongated hexagonal ZnO micro-fence optical resonator

A highly symmetric ZnO micro-fence is prepared to form an optical resonator, which a symmetric array consisting of six elongated hexagonal microcolumns. It is found that the luminescence emission could be enhanced at the edge of ZnO micro-fence and the wavelength dependent light intensity could be influenced by its geometry. The optical characterization along with theoretical calculations and computer simulation analysis suggest that the Fabry-Perot and Cross-whispering gallery modes are generated in ZnO micro-fence. The individual ZnO micro-fence can regarded as an optical resonator structure. Furthermore, it is proposed that the source concentration around the substrate during the growth is a crucial factor for forming such a micro-fence.