一种宽带注入锁定三倍频器

文章提出了一种宽带注入锁定三倍频器。在传统注入方式基础上,倍频器采用了推-推差分对输入信号进行二倍频,并将产生的二次谐波通过变压器耦合至注入管的源极共模点,增强了注入管源极共模点二次谐波。由于注入电流是由注入信号与源极共模点二次谐波进行混频而产生,因此注入电流也被增强,从而增大了锁定范围。除此之外,三倍频采用了四阶谐振器,谐振阻抗的相位在过零点被平坦化,锁定范围进一步被增大。采用标准CMOS 65 nm工艺设计三倍频,芯片面积为720×670 μm²,1.2-V供电时的功耗为15.2 mW。0 dBm注入功率下三倍频的锁定范围为19.2~27.6 GHz,对应的基波抑制比大于25 dB,二次谐波抑制大于35 dB。注入锁定三倍频器可满足5G收发机中本振源的要求。     

宽阻带小型化双频带通滤波器

文中提出了一种具有宽阻带的紧凑型双频带通滤波器,它采用了折叠短路枝节负载谐振器、紧凑型微 带单元谐振器(CMRC)和阶跃阻抗谐振器结构。由于多个谐振器产生了五个可控传输零点(TZ),该滤波器实现了两个 通带之间的良好隔离度以及宽阻带特性。制作并测试了尺寸紧凑的双频带通滤波器实验样品,测试结果显示,第一通 带和第二通带的中心频率/ 插入损耗分别为0. 66 GHz/0. 8 dB 和1. 73 GHz/0. 7 dB,阻带频率高达10. 5 GHz,抑制水平 超过15 dB。     

谐振器加载石墨烯的双通带可调滤波衰减器设计

石墨烯材料在微波段的阻抗可控特性是其最有价值的应用特性之一。文中首次分析了石墨烯对微带 多模谐振的影响机理,提出了一种集成滤波衰减功能为一体的灵活可控器件。首先,对不同位置加载石墨烯的微带双 模谐振器进行了严格的等效电路建模,通过奇偶模分析法及输入导纳参数计算,探究了双模谐振受石墨烯阻抗及其加 载位置的影响,明晰了石墨烯材料对微波谐振器的影响。随后设计了动态可调的滤波衰减器并阐述了石墨烯材料在谐 波控制上的潜在应用点。最后,采用不同尺寸的双模谐振器进行石墨烯加载并完成双通带幅度独立可控的滤波衰减器 的设计,仿真与实测结果吻合良好,验证了阻抗可控石墨烯材料在可调微波衰减类器件上的应用前景。     

Investigation of superconductivity effects in single-phase and multiphase Bi2Sr2CaCu2O8 single-crystals at 2-MM wavelengths

Experimental investigations of superconductivity effects in single-phase and multiphase Bi₂Sr₂CaCu₂O₈ single-crystals have been carried out at 142 GHz frequency by means of the standing wave profile method [1]. Josephson harmonic generation has been observed to be responsible for the appearence of additional peaks on the standing wave profile of the open dielectric resonator loaded with a properly orientated multiphase high-T_c superconductor specimen. This leads to the conclusion that most of the Josephson junctions in multiphase crystals are located in certain crystallographic planes. The investigations of temperature dependencies showed that sharp resonant peaks of conductivity observed earlier [2] at 60 GHz could also be observed at 142 GHz.     

Operation of the quasi-optical gyrotron at harmonics of the gyrofrequency

This paper investigates the performance of a quasioptical gyrotron, when the electron beam interacts with the radiation fields at harmonics of the gyrofrequency. The nonlinear equations of motion are obtained in the slow-timescale. The expression for the linear gain is derived and the conditions for excitation are given (frequency threshold, optimal operating point, bean current and resonator quality thresholds). In the nonlinear regime, it is shown that maximum efficiencies comparable to those at the fundemental (50%) are possible, albeit at a prohitively high radiation field amplitude, while realistically feasible field amplitudes can give somewhat smaller, but nevertheless still high efficiencies (15%). Finally, the results are suplemented by empirical scaling laws, useful for experimental designs.     

SOI基光学电流传感器的设计与仿真

将光纤与微电子机械系统(MEMS)技术相结合,设计了一种新颖的检测50Hz高压交流电的光学电流传感器(OCS)。用ANSYS软件分析了器件的模态、动态响应与热膨胀特性,并通过Matlab软件模拟了器件的工作性能。模拟计算表明:ANSYS与理论公式得到的结果基本一致;传感器的量程为100~3600A,对于大电流下的灵敏度可达到0.02dB/A,温度变化±50K时传感器相应的测试误差为0.2%。     

Bulk micromachining of silicon in TMAH-based etchants for aluminum passivation and smooth surface

The fabrication of silicon based micromechanical sensors often requires bulk silicon etching after aluminum metallization. All wet silicon etchants including ordinary undoped tetramethyl ammonium hydroxide (TMAH)-water solution attack the overlaying aluminum metal interconnect during the anisotropic etching of (100) silicon. This paper presents a TMAH-water based etching recipe to achieve high silicon etch rate, a smooth etched surface and almost total protection of the exposed aluminum metallization. The etch rate measurements of (100) silicon, silicon dioxide and aluminum along with the morphology studies of etched surfaces are performed on both n-type and p-type silicon wafers at different concentrations (2, 5, 10 and 15%) for undoped TMAH treated at various temperatures as well as for TMAH solution doped separately and simultaneously with silicic acid and ammonium peroxodisulphate (AP). It is established through a detailed study that 5% TMAH-water solution dual doped with 38 gm/l silicic acid and 7 gm/l AP yields a reasonably high (100) silicon etch rate of 70 μm/h at 80 °C, very small etch rates of SiO₂ and pure aluminum (around 80 Å/h and 50 Å/h, respectively), and a smooth surface (±7 nm) at a bath temperature of 80 °C. The etchant has been successfully used for fabricating several MEMS structures like piezoresistive accelerometer, vaporizing liquid micro-thruster and flow sensor. In all cases, the bulk micromachining is carried out after the formation of aluminum interconnects which is found to remain unaffected during the prolonged etching process at 80 °C. The TMAH based etchant may be attractive in industry due to its compatibility with standard CMOS process.     

Capacitive micromachined ultrasonic transducer (CMUT) arrays for medical imaging

Capacitive micromachined ultrasonic transducers (CMUTs) bring the fabrication technology of standard integrated circuits into the field of ultrasound medical imaging. This unique property, combined with the inherent advantages of CMUTs in terms of increased bandwidth and suitability for new imaging modalities and high frequency applications, have indicated these devices as new generation arrays for acoustic imaging. The advances in microfabrication have made possible to fabricate, in few years, silicon-based electrostatic transducers competing in performance with the piezoelectric transducers. This paper summarizes the fabrication, design, modeling, and characterization of 1D CMUT linear arrays for medical imaging, established in our laboratories during the past 3 years. Although the viability of our CMUT technology for applications in diagnostic echographic imaging is demonstrated, the whole process from silicon die to final probe is not fully mature yet for successful practical applications.     

圆片级封装的新颖对准技术

对于3D互连、圆片级封装(WLP)和先进的MEMS器件的圆片键合,精密对准是一项关键技术,不同的MEMS,常常包含双面加工处理,而IC和CMOS制造业则只利用单面加工处理步骤,因此,圆片到圆片的对准必须使用设置在键合界面(也就是面对面)中的对准标记。论述了面对面对准方法的主要步骤,最新结果报导,用一种特殊开发的对准系统获得了≤1μm的对准精度。设备主要是为圆片对圆片的对准和键合而设计。     

一种基于MEMS的射频低相位噪声压控振荡器的研制

利用微机械可变电容作为频率调节元件,制备了一种中心频率为2GHz的 LC VCO.微机械可变电容的控制极板与电容极板分离,并采用表面微机械工艺制造,在2GHz时的Q值最高约为38.462.MEMS VCO的测试结果表明,偏离2.007GHz的载波频率100kHz处的单边带相位噪声为-107.5dBc/Hz,输出功率为-13.67dBm.对微机械可变电容引起的机械热噪声以及减小空气压膜阻尼来降低相位噪声的方法进行了讨论,提出了一种优化阻尼孔数目的方法.