我国居民收入、人口、教育、财政政策和货币政策与居民消费模型的实证分析

本文从影响消费的各个因素:居民收入、人口、教育、国家宏观政策等着手,对各因素进行了相关分析,运用多元统计中的岭回归估计法建立消费模型。从定量和定性分析的角度,分析了我国居民消费水平、居民收入、人口增长率、各层次教育、国家财政支出和银行利率等相关因素之间相互影响的数量变动关系和内在规律,就如何提高居民消费水平促进经济协调发展提出若干对策。     

浅论太阳电池在通信工程中的应用

介绍了太阳电池应用的一般要求和太阳能供电系统的组成及运行，给出了工程设计个常用的太阳电池容量计算方法，并提出太阳能供电系统运行维护注意事项。     

有消费或投资的华氏宏观经济模型

本文对华罗庚教授的宏观经济模型进行了推广 ,在原来模型的基础上 ,分别增加了消费、投资 ,得到两种不同的模型 ,并对模型具有经济意义的解进行了研究     

Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers

Thin films of titanium dioxide have been deposited on strained Si_0.82Ge_0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C₃H₇)₄] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density (D_it), fixed oxide charge density (Q_f/q) and flat-band voltage (V_FB) of as-deposited films were found to be 13.2, 40.6 Å, 6×10¹¹ eV⁻¹ cm⁻², 3.1×10¹¹ cm⁻² and −1.4 V, respectively. The capacitance–voltage (C–V), current–voltage (I–V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications.     

Sn/Ge(1 1 1) α-phase: characterization of image resonances by specular electron reflection and selective electron scattering

Image potential resonances on the Sn/Ge(1 1 1) α-phase are investigated by two closely related methods: specular electron reflection and so-called selective electron scattering. Electrons from image resonances are detected on this surface at 120 and 300 K, i.e. below and above the phase transition at about 200 K. The dispersion of the image resonances reveals at these two temperatures equivalent effective electron masses, which are characteristic for this type of electronic surface states. The results of the two methods are consistent according to the similarity of the scattering processes. Changes in the loss peak intensity with the annealing temperature are assigned to the surface quality and are reflected by characteristic photoemission intensities.     

轴线起爆式螺线管型爆磁压缩发生器理论模型

 对轴线起爆式螺线管型爆磁压缩发生器进行了理论模型研究，建立了爆炸管的一维爆轰驱动模型、螺线管内空间磁场强度分布模型、爆炸管外表面磁压力模型和发生器系统的等效电路模型等，对此类发生器的物理过程进行系统描述。在此基础上，编制了相应的零维数值模拟程序CEMG 1.0，利用该程序分别对四种不同模型参数的发生器进行了理论计算和参数优化，并对其中一模型发生器爆炸管外表面的磁压力及其引起的剩余电感进行了计算，给出了剩余电感与初始输入条件及负载电感的关系，从而得到该模型的输出性能极限。对理论模型的正确性进行了实例验算证明。     

On locating low altitude moving targets using a planar acoustic sensor array

It is of engineering importance to locate low altitude moving targets with acoustic methods due to the blindness of the traditional radar detecting. In this paper, an algorithm for locating low altitude moving targets is put forward based on a five-element planar acoustic sensor array. The method is realized through estimations of the sensor-to-sensor time delays of the source signal generated by the low altitude moving target. The angle and range estimation performance of the proposed method are analyzed, respectively, both in theoretical and numerical sense.     

脉冲电镀的正向电流密度对深镀能力的影响

主要通过在正反向电流比、频率、脉冲宽度一定的条件下,改变正向电流密度的大小来研究其对PCB整板电镀铜深镀能力的影响。从测得的数据可知随着正向电流密度的增大,深镀能力先变大后变小,并对这个问题进行了理论分析。     

Monitoring Power Dissipation for Fault Detection

In this paper, we suggest that the dynamic power dissipation of acircuit can be used for fault detection. Even those faults which do notaffect static power dissipation can be detected by monitoring dynamic powerdissipation. We discuss how stuck-at, stuck-open, and redundant faults maybe detected by monitoring dynamic power dissipation. In many cases, theFourier spectra of the supply currents in the good and faulty circuits willalso be very different. Further, specific tests can be applied so as toimprove fault coverage. Power monitoring is verified using simulation, andalso experimentally, for example circuits.     

Effect of Ga doping on magneto-transport properties in colossal magnetoresistive La0.7Ca0.3Mn1−xGaxO3 (0<x<0.1)

Samples of La_0.7Ca_0.3Mn_1−xGa_xO₃ with x=0, 0.025, 0.05 and 0.10 were prepared by standard solid-state reaction. They were first characterized chemically, including the microstructure. The magnetic properties and various transport properties, i.e. the electrical resistivity, magnetoresistivity (for a field below 8 T), thermoelectric power and thermal conductivity measured each time on the same sample, are reported. The markedly different behaviour of the x=0.1 sample from those with a smaller Ga content, is discussed. The dilution of the Mn³⁺/Mn⁴⁺ interactions with Ga doping considerably reduces the ferromagnetic double exchange interaction within the manganese lattice leading to a decrease of the Curie temperature. The polaron binding energy varies from 224 to 243 meV with increased Ga doping.