Pseudo-Strong Regularity Around a Set

A generalization of strong regularity around a vertex subset C of a graph Γ, which makes sense even if Γis non-regular, is studied. Such a structure appears, together with a kind of distance-regularity around C , when an spectral bound concerning the so-called predistance polynomial of C is attained. As a main consequence of these results, it is shown that a regular (connected) graph Γwith d + 1 distinct eigenvalues is distance-regular, and its distance- d graph Γ d is strongly regular with parameters a = c , if and only if the number of vertices at distance d from each vertex satisfies an expression which depends only on the order of Γand the different eigenvalues of Γ.     

江苏省本地电话网结构与发展

分片汇接的网状网结构是江苏省本地电话网的基本框架,而汇接局和连接汇接局的传输系统则是网路规划与通信建设的重点。     

A numerical study of time-dependent schr?dinger equation for multiphoton vibrational interaction of NO molecule, modelled as Morse oscillator, with intense far-infrared femtosecond lasers

For the NO molecule, modelled as a Morse oscillator, time-dependent (TD) nuclear Schr?dinger equation has been numerically solved for the multiphoton vibrational dynamics of the molecule under a far-infrared laser of wavelength 10503 nm, and four different intensities,I = 1 × 10⁸, 1 × 10¹³, 5 × 10¹⁶, and 5 × 10¹⁸ W cm⁻² respectively. Starting from the vibrational ground state at zero time, various TD quantities such as the norm, dissociation probability, potential energy curve and dipole moment are examined. Rich high-harmonics generation (HHG) spectra and above-threshold dissociation (ATD) spectra, due to the multiphoton interaction of vibrational motions with the laser field, and consequent elevation to the vibrational continuum, have been obtained and analysed. Dedicated to Professor C N R Rao on his 70th birthday An erratum to this article is available at .     

温度调谐LBO晶体光参量振荡器

本文详细研究０．５３２μｍ激光泵浦、温度调谐Ⅱ型非临界相位匹配ＬＢＯ光参量振荡器。当温度从２０℃升高到２００℃时，其信号波和闲置波的调谐范围分别为１．００２～０．８９８μｍ和１．１３４～１．３０６μｍ。本装置最吸引人之处是本征输出线宽比Ⅰ型情形小一个量级。     

Fabrication of sharp silicon tips employing anisotropic wet etching and reactive ion etching

We developed a process to obtain sharper silicon tips by employing anisotropic etching in a KOH solution followed by SF₆ plasma etch. The tips were further sharpened using the established thermal oxidation technique to decrease the cone angle and, therefore, obtain smaller curvature radii. We have analyzed the impact of such changes in geometry on a figure of merit associated with the field emission characteristics. An increase in the figure of merit by a factor of three was found in relation to the tips before sharpening.     

Brownian motion of nonlinear oscillators: The projection operator method and its application to a double-well-potential oscillator

A projection operator method is presented, which provides the most efficient way for calculating the stationary behavior of nonlinear Brownian motion. A continued-fraction expansion of the Fourier-Laplace transform of the displacement correlation function or the spectral density is used. This method utilizes a successive optimization procedure on the nonlinear terms and includes the method of statistical linearization as the lowest order approximation. A systematic way to calculate the continued fraction numerically up to sufficient order for convergence is developed, which enables us to obtain the spectral density of a system previously uncomputable.Numerical computations of the spectral density of a nonlinear oscillator with a double-well potential are presented and compared with the results obtained by statistical linearization.This work was supported in part by the National Science Foundation under Grant CHE 75-20624.     

一种新型的高功率高频率同轴渡越时间振荡器

提出了一种高频率和高功率的渡越时间振荡器,并且对其进行了理论和数值研究。这种振荡器采用同轴结构,功率容量大,不需要外加引导磁场聚焦电子束,波束相互作用区短,保持了传统渡越时间振荡器在结构上的简单性和输出信号的稳定性;运用电压为225kV和电流为11kA的电子束进行模拟,在X波段获得了峰值功率为1.4GW,频率为8.335GHz的微波输出。     

Plasma generation in silicon-based inductive grid arrays

Selective illumination of a silicon wafer can be used for the construction of non-permanent inductive grids. A numerical model is used for the calculation of plasma density distribution in silicon as a function of time. Some indicative results on the microwave properties of the device are presented.