光学光刻技术的历史演变

简要回顾了光学光刻技术的发展历程,从IC技术节点微细化要求对光刻技术的挑战方面讨论了光学光刻技术的发展趋势及进入32nm技术节点的可能性。     

Patterning Spherical Surfaces at the Two‐Hundred‐Nanometer Scale Using Soft Lithography

Two soft lithographic techniques—topographically directed photolithography (TOP) and near‐field contact‐mode photolithography—have been used to pattern spherical surfaces with features as small as 175 nm. Each technique has the ability to pattern more than a 60° arc of a spherical surface, albeit with distortions at the edge. Use as an optical polarizer demonstrates an application of these types of patterned surface.     

Microfabrication processes on cylindrical substrates - Part II: Lithography and connections

Cylindrical microfabrication offers the opportunity to fabricate electrical or mechanical devices around the surfaces of cylinders. Standard processes developed for planar substrates such as silicon wafers must be adapted to curved surfaces. This paper focuses on lithography of and connections to cylinders. Results from lithographic testing includes dose exposure curves using laser and electron beam sources as well as the minimal effects of surface curvature on linewidth. Bonding included ultrasonic wedge bonding, silver epoxy, and solder paste. Electrical and mechanical characteristics of these bonding methods are presented.     

Development of lithographic techniques for metallisation of organic substrates

A wide range of applications which involve organic crystalline materials require the metallisation of low-molecular-weight compounds. Conventional lithographic techniques used in silicon fabrication technology use high-temperature processing methods which are unsuitable for organic materials. Gold/titanium bilayer and shadow-masking techniques were found to provide suitable solutions to the problem of metallisation of these materials and allowed fabrication of a surface acoustic wave (SAW) device with (–)-2-α-methylbenzylamino-5-nitropyridine (MBANP) as substrate.     

集成电路制造技术展望

简要论述了集成电路的发展和特大规模集成电路中部份硅生产工艺技术近几年的发展趋势。特大规模集成电路仍然朝着较大直径的硅单片和较小的特征尺寸方向发展。当特大规模集成电路特征尺寸在0.1μm以下时，角度限制散射投影电子束光刻和极紫外线光刻以及离子投影光刻等光刻技术是较佳侯选者。离子注入掺杂技术将向高能量与低量离子注入领域发展。淀积可靠耐用的TiN薄膜阻挡层是下一步溅射工艺的发展目标。集成电路的生产将向自动化方向发展。     

一种适于快速OPC的精确光刻胶剖面仿真算法

光刻仿真工具是描述实际工艺的有效工具。利用光刻仿真工具，能够准确地描述由掩模制造工艺、光刻胶曝光、显影、蚀刻所引起的光学邻近效应和畸变所导致的关键尺寸的变化。利用了改进的空间图像仿真及可变光强阈值模型来获得准确的硅片图形。改进的空间图像的基本思想是，用空间图像与一个高斯滤波器进行卷积，从而使图像较原来变得模糊，以此来模拟光刻胶的实际扩散效应。描述了一种适用于快速光学邻近校正（OPC）的准确的光刻胶剖面仿真算法。     

Three-Photon Infrared Stimulation of Endogenous Neuroreceptors in Vivo

To interrogate neural circuits and crack their codes, in vivo brain activity imaging must be combined with spatiotemporally precise stimulation in three dimensions using genetic or pharmacological specificity. This challenge requires deep penetration and focusing as provided by infrared light and multiphoton excitation, and has promoted two-photon photopharmacology and optogenetics. However, three-photon brain stimulation in vivo remains to be demonstrated. We report the regulation of neuronal activity in zebrafish larvae by three-photon excitation of a photoswitchable muscarinic agonist at 50 pM, a billion-fold lower concentration than used for uncaging, and with mid-infrared light of 1560 nm, the longest reported photoswitch wavelength. Robust, physiologically relevant photoresponses allow modulating brain activity in wild-type animals with spatiotemporal and pharmacological precision. Computational calculations predict that azobenzene-based ligands have high three-photon absorption cross-section and can be used directly with pulsed infrared light. The expansion of three-photon pharmacology will deeply impact basic neurobiology and neuromodulation phototherapies.     

Fabrication and electrical performance of high-density arrays of nanometric silicon tips

We propose and demonstrate a simple and low cost process for the fabrication of large area arrays of nanometric silicon tips, for use as Field Emission Devices (FEDs). The process combines Interference Lithography (IL) with isotropic Reactive Ion Etching (RIE). Si tips with typical curvature radius of 20 nm and height of 900 nm were recorded with a periodicity of 1 μm (density of 10⁶ tips/mm²) covering a Silicon wafer of 2 in. The measurement of the electrical performance of the arrays demonstrates the feasibility of the association of these two techniques for recording Field Emission Tips.     

挠性薄膜上形成的电子电路

概述了利用UV光射生产的金属钠米粒子／聚合物混合薄膜上的化学镀以及挠性膜上电子电路形成的应用。     

3D互连中光刻与晶圆级键合技术面临的挑战,趋势及解决方案(英文)

目前,3D集成技术的优势正在扩展消费类电子产品的潜在应用进入批量市场。这些新技术也在推进着当前许多生产工艺中的一些封装技术包括光刻和晶圆键合成为可能。其中还需要涂胶,作图和蚀刻结构。探讨一些与三维互连相关的光刻技术的挑战。用于三维封装的晶圆键合技术将结合这些挑战和可用的解决方案及发展趋势一并介绍。此外还介绍了一种新的光刻设备,它可通过图形识别技术的辅助实现低于0.25μm的最终对准精度。对于采用光刻和晶圆级键合技术在三维互连中的挑战,趋势和解决方案及SUSS公司设备平台的整体介绍将根据工艺要求来描述。在这些技术中遇到的工艺问题将集中在晶圆键合和光刻工序方面重点讨论。