Direct Surface Patterning from Solutions: Localized Microchemistry Using a Focused Laser

A method for creating microscale‐patterned surfaces by direct‐write lithography is described. A tightly focused, low‐power infrared laser beam is applied to a homogeneous precursor solution containing soluble reagents. When the laser is focused directly at a glass–solution interface, it initiates the local precipitation of a solid product that attaches firmly to the substrate. Operating the laser momentarily forms isolated spots, whereas moving the microscope stage or the laser spot draws continuous lines. The method has been demonstrated for metallic silver and gold, for oxidized copper, and for molybdenum disulfide, suggesting a broad range of suitable materials. Silver patterns were further modified by chemical reactions. Their morphology and physical properties can be altered during deposition by the use of capping agents, which may provide an onset for further functionalization.     

A robust spacer gate process for deca-nanometer high-frequency MOSFETs

This paper, presents a robust spacer technology for definition of deca-nanometer gate length MOSFETs. Conformal deposition, selective anisotropic dry-etching and selective removal of sacrificial layers enabled patterning of an oxide hard mask with deca-nanometer lines combined with structures defined with I-line lithography on a wafer. The spacer gate technology produces negligible topographies on the hard mask and no residual particles could be detected on the wafer. The line-width roughness of 40 nm poly-Si gate lines was 4 nm and the conductance of 200 μm long lines exhibited a standard deviation of 6% across a wafer. nMOSFETs with 45 nm gate length exhibited controlled short-channel effects and the average maximum transconductance in saturation was 449 μS/μm with a standard deviation of 3.7% across a wafer. The devices exhibited a cut-off frequency above 100 GHz at a drain current of 315 μA/μm. The physical and electrical results show that the employed spacer gate technology is robust and can define deca-nanometer nMOSFETs with high yield and good uniformity.     

A planar waveguide beam splitter

A 50:50 beam splitter for the light and matter waves based on a planar waveguide is studied. The light version of such a beam splitter is demonstrated experimentally. Applications of such a beam splitter in atom optics, interferometry and lithography are discussed.     

Fabrication of Silicon-Blazed Gratings for Couplers

To our knowledge, no blazed grating has been fabricated in silicon (Si) at a pitch of less than half a micron. In this article, we report the fabrication of Si-blazed gratings at the period of 400 nm, using electron beam lithography and ion beam etching techniques. The blazed grating is extremely useful as a grating coupler in integrated optics, operating at the telecommunication wavelength of 1.3 mum, because very high output efficiency of the grating coupler is expected. This will allow coupling to thin film devices in silicon, previously not regarded as promising because coupling to them was very inefficient.     

下一代光刻技术

介绍了下一代光刻技术的演变,重点描述了浸没式光刻技术、极端远紫外光刻技术、纳米压印光刻技术和无掩模光刻技术的基本原理、技术优势、技术难点以及研发,并展望了这几种光刻技术的前景。     

用于化合物半导体制造的先进光刻技术

重点讨论了化合物半导体材料加工中的先进光刻技术应用现状。薄形衬底材料在高频及功率器件中的需求,在处理非常易碎和昂贵的衬底时出现了一些新的问题。这种损伤的风险由于要求的多个加工工序而增大,且在接转生产的采用背面加工时会再次出现。叙述了进行自动光刻加工中片子传递和对准过程的一些解决方法。     

分辨力增强技术在65 nm浸没式ArF光刻中的应用

首次利用自主研发的光刻辅助设计软件MicroCruiser结合Prolith8.0.2,研究了分辨力增强技术在65nm浸没式ArF光刻中的应用,研究表明,相移掩模结合传统照明可以获得较大的工艺窗口,但是,引起的曝光图形偏移较大。而传统掩模结合离轴照明可以获得较大的工艺窗口,但是,引起的曝光图形偏移较小。因而,通过对单个像差的控制和进行的不同Zernike系数组合,可以大大减少曝光图形的偏移。     

Molecular design for novel radiation resist decomposable by electron detachment

Molecular structures that can be dissociated into two fragments in cryogenic solid by electron detachment have been investigated for constructing high-resolution radiation resists that are free from blur due to the migration of secondary electrons. Within examined molecules that are known to be dissociative by electron detachment in liquids, only the radical cations of (C₆H₅)₂(OH)C–CH(OH)C₆H₅ and [(CH₃C₆H₅)(C₆H₅)(OH)C–]₂ dissociate into benzyl-type radicals and cations. A polymer containing these molecules at the center of the skeleton can be used as a resist with high sensitivity and high spatial resolution, since the exposure of ionizing radiation causes stepwise reduction of the molecular weight by direct ionization.     

Responsive hydrogel layers—from synthesis to applications

Responsive polymer networks are interesting materials for a variety of different applications due to the fact that they can perform a large volume transition. However, the swelling transition is a diffusion limited process. Thus, the decrease of the feature size (e.g., in thin layers) is an appropriate way to create structures with reasonable response time. The possibility to pattern responsive polymer networks makes them useful for application in microsystem technology as well as in biomedicine. The transition behavior of these films showed similar trends to those of the corresponding linear polymers whereas confinement effects have been found for thin hydrogel layers. The ability to optimize the integration of these polymers is critical for the fabrication and development of platforms that harness the unique abilities of responsive polymer networks. Here, recent developments on chemically cross-linked hydrogel layers with respect to synthesis, characterization, and application are highlighted.     

极紫外投影光刻光学系统

极紫外光刻（EUVL）是半导体工业实现32～16nm技术节点的候选技术,而极紫外曝光光学系统是EUVL的核心部件,它主要由照明系统和微缩投影物镜组成。本文介绍了国内外现有的EUVL实验样机及其系统参数特性;总结了EUVL光学系统设计原则,分别综述了EUVL投影光学系统和照明光学系统的设计要求;描述了EUVL投影曝光系统及照明系统的设计方法;重点讨论了适用于22nm节点的EUVL非球面六镜投影光学系统,指出了改善EUVL照明均匀性的方法。