用于IC封装的光刻设备

光刻是圆片级封装的一种最重要的工艺,无论是焊盘分布、焊凸形成、密封或其它新出现的需求,晶圆上精确的成像区域对每一种工序来讲是最重要的。评述了一些圆片级封装的光刻系统及为什么某些专门的设备能很好地适于应用,会是接近式光刻机、步进投影光刻机还是一些替代设备在未来的几年内来满足这种需求?我们将探索这种可能性。     

Photolithographic Route to the Fabrication of Micro/Nanowires of III–V Semiconductors

Nano/microwires of semiconducting materials (e.g., GaAs and InP) with triangular cross‐sections can be fabricated by “top–down” approaches that combine lithography of high‐quality bulk wafers (using either traditional photolithography or phase‐shift optical lithography) with anisotropic chemical etching. This method gives good control over the lateral dimensions, lengths, and morphologies of free‐standing wires. The behaviors of many different resist layers and etching chemistries are presented. It is shown how wire arrays with highly ordered alignments can be transfer printed onto plastic substrates. This “top–down” approach provides a simple, effective, and versatile way of generating high‐quality single‐crystalline wires of various compound semiconductors. The resultant wires and wire arrays have potential applications in electronics, optics, optoelectronics, and sensing.     

基于低能电子束的光刻技术

讨论了聚焦电子束曝光中的邻近效应问题,阐述了扫描隧道显微镜的原理和工作方式。把扫描隧道显微技术用于低能电子束的光刻,不仅能提高图形的分辨率,而且使电子束加工工艺不再局限于真空环境。对曝光电子的能量和线条宽度之间的关系进行了分析。     

0.1μmT型栅PHEMT器件

通过电子束和接触式曝光相结合的混合曝光方法 ,并利用复合胶结构 ,一次电子束曝光制作出具有 T型栅的 PHEMT器件 ,并对 0 .1μm栅长 PHEMT器件的整套工艺及器件性能进行了研究 .形成了一整套具有新特点的PHEMT器件制作工艺 ,获得了良好的器件性能 (ft=93.97GHz;gm=6 90 m S/mm ) .     

Inside Front Cover: The Elastic Properties and Plastic Behavior of Two‐Dimensional Polymer Structures Fabricated by Laser Interference Lithography (Adv. Funct. Mater. 10/2006)

The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern.     

温度气压对高分辨力光刻物镜像质影响研究

分析温度气压对物镜光学材料、透镜厚度间隔,以及空气折射率的影响,并用空气折射率对物镜像质影进行模拟计算。研究表明物镜焦面产生较大漂移,对僧率有一定影响,而对畸变影响较小,指出对物镜进行温度气压控制补偿是必要的。     

Nanometer scale patterning by scanning tunelling microscope assisted chemical vapour deposition

Single electron devices are of great interest for their possible replacement of transistors in memories. The key to the preparation of these components is the production of low capacitance dots, which requires a lithography step at nanometric scale. Direct patterning of metallic features at nanometric scale is possible by local decomposition of gaseous molecules under a scanning tunneling microscope (STM) tip, by application of a voltage of a few volts on the sample (STM assisted chemical vapour deposition). The gaseous molecules are dissociated by the high electric field (about 10⁷ V/cm) within the tip–sample gap. Rhodium lines and dots have been deposited on gold or silicon surfaces by decomposition of [Rh(PF₃)₂Cl]₂. The influence of the sample voltage was studied and the resolution limit of the technique was investigated.     

极紫外光刻真空工件台技术研究

在极紫外光刻系统中,真空工件台的运行精度、速度、加速度以及动态定位和扫描同步性能是影响整机成像质量、套刻精度和产率的重要因素。结合极紫外光刻机的工作原理和发展现状,论述了极紫外光刻机真空工件台系统的特征、组成及其关键技术。     

Efficient electron beam condensing for low-energy microcolumn lithography

Low-energy electron beam lithography has been performed with a microcolumn by adopting a new technique that condenses the electron beam efficiently. To increase the probe current while keeping the kinetic energy of electrons sufficiently low, the negative or positive bias has been applied to the accelerator electrode, which reduces the divergence of the electron beam and hence makes more electrons pass through the microcolumn. With this technique, the probe current more than 1 nA has been achieved, which is large enough for the practical application of microcolumn lithography even when the kinetic energy of electrons is as low as 160 eV. The results of microcolumn lithography by using the condensed electron beam with a low-energy of 160 and 327 eV are also presented.     

Patterning of organic layers using negative and positive working Top-CARL process

The Top-CARL process is a technique for patterning organic materials some tens of microns thick by top-resist silylation and pattern transfer via oxygen reactive ion etching. The influence of exposure dose, temperature and top-resist layer thickness on the silylation process is studied. A dyed version of the resist is examined. Its polarity can be changed from negative to positive working by addition of a small amount of a photo base.