光刻技术的发展动态

介绍了目前几种主流光刻技术（光学光刻，电子束光刻，ｘ射线光刻和离子束光刻）的发展动态     

Semiconductor patterning technologies for nano devices

In the era of nano devices, patterning technology encounters many challenges, which arise from not only lithography but also plasma etching. Water-immersion lithography (193 nm) is clearly within sight and many lithography technologies, including extreme ultra-violet (EUV) and other methods, are being developed as the next generation lithography technologies. For nano device etching, introduction of very thin photoresist and more complex device structure requires subtle improvement of etching. Also, the adoption of new materials such as high-k dielectric, metal gate, and phase change materials require more improvement in the view point of profile and selectivity. Finally, since the process window is getting narrower, control and monitoring technologies such as advanced process control (APC) and advanced equipment control (AEC) are strongly required.     

Simple Patterning via Adhesion between a Buffered‐Oxide Etchant‐Treated PDMS Stamp and a SiO2 Substrate

A very simple polydimethylsiloxane (PDMS) pattern‐transfer method is devised, called buffered‐oxide etchant (BOE) printing. The mechanism of pattern transfer is investigated, by considering the strong adhesion between the BOE‐treated PDMS and the SiO₂ substrate. PDMS patterns from a few micrometers to sub‐micrometer size are transferred to the SiO₂ substrate by just pressing a stamp that has been immersed in BOE solution for a few minutes. The patterned PDMS layers work as perfect physical and chemical passivation layers in the fabrication of metal electrodes and V₂O₅ nanowire channels, respectively. Interestingly, a second stamping of the BOE‐treated PDMS on the SiO₂ substrate pre‐patterned with metal as well as PDMS results in a selective transfer of the PDMS patterns only to the bare SiO₂. In this way, the fabrication of a device structure consisting of two Au electrodes and V₂O₅ nanowire network channels is possible; non‐ohmic semiconducting I–V characteristics, which can be modeled by serially connected percolation, are observed.     

Frequency selective IR-filter produced by using EB-lithography

This paper reports on the fabrication of Jerusalem cross diplexer by direct write electron beam (EB) lithography followed by reactive ion etching (RIE) on a phosphorus doped polished silicon wafer substrate. Such structures can be used as frequency selective components in visible, microwave and near infra-red wavelength region. Replication of the patterns is accomplished by micron or sub-micron order mould fabricated from the silicon (Si) master. Fourier transform infra-red reflectance (FT-IR) measurements were performed to characterize the structured patterns. The spectral reflectance from these patterns clearly show a reflection dip due to surface plasmon excitation in the near infra-red wavelength at about 1.42 and 2.5 μm, respectively. Potential applications such as antireflection surface (ARS) can be realized.     

基于厚金属狭缝阵列的表面等离子激元光刻

提出一种利用厚金属狭缝阵列耦合激发表面等离子激元制作非周期图形的纳米光刻模型.采用时域有限差分电磁场模拟仿真软件研究了厚金属狭缝阵列中表面等离子激元的激发、模式选择以及光刻胶中的光场分布.结果表明,通过优化厚金属狭缝阵列结构参量和匹配介质参量可有效抑制表面等离子激元在光栅狭缝出口处的发散,增加表面等离子激元的穿透深度,可获得高分辨率的较大曝光深度的周期和非周期纳米图形,可为纳米激光直写技术提供有益的借鉴.     

应用于光刻领域中的固态紫外激光源的制作

以半导体侧泵钇铝石榴石激光器为泵浦源,采用腔内泵浦两块三硼酸铯晶体,产生满足高功率与高光束质量要求的三倍频355 nm紫外激光.通过使用法拉第旋转器谐振腔优化设计与热效应补偿提高输出光的光束质量,并且使用体光栅作为输出镜,在实现线宽窄化同时保持准相位匹配的高效性能.该光刻用紫外激光源成功地替代准分子激光器,使用在一套大面积亚纳米级投影式光刻系统上,工作时紫外光输出功率为4.37 W,光束质量因子为2.27.     

Hybrid approach for the design of mirror array to produce freeform illumination sources in immersion lithography

Source and mask optimization (SMO) has emerged as a key resolution enhancement technique (RET) for 45 nm technology node and below in lithography. The design method of freeform illumination sources predicted by SMO is significant for the scanner development. We present a hybrid approach combining simultaneous and sequential approaches to optimize the tilt angles of the mirrors to produce multi target freeform illumination sources accurately and quickly. The size of spot reflect by plane mirror can be easily controlled by changing different microlens arrays with appropriate focal length, which reduce the complexity of the system and makes it more flexible to produce the specific freeform sources compared to curving the mirrors used in previous work. The relationship between the tilt angles of plane mirrors and the positions of the spots in the pupil is obtained by chief ray tracing. Using the hybrid approach the freeform illumination sources required by SMO can be designed by merely adjusting the tilt angles of mirrors without changing other parameters of optical elements, which is most effective for both lithography tool manufacture and its applications. The real ray tracing results demonstrate that our design method is capable of creating multi freeform illumination sources with high transmittance, and confirm that the effectiveness of the hybrid approach for optimized design and control of mirror array in immersion lithography system.     

基于厚金属狭缝阵列的表面等离子激元光刻

提出一种利用厚金属狭缝阵列耦合激发表面等离子激元制作非周期图形的纳米光刻模型.采用时域有限差分电磁场模拟仿真软件研究了厚金属狭缝阵列中表面等离子激元的激发、模式选择以及光刻胶中的光场分布.结果表明,通过优化厚金属狭缝阵列结构参量和匹配介质参量可有效抑制表面等离子激元在光栅狭缝出口处的发散,增加表面等离子激元的穿透深度,...     

Wetting transitions on textured hydrophilic surfaces

We consider the quasi-static energy of a drop on a textured hydrophilic surface, with taking the contact angle hysteresis (CAH) into account. We demonstrate how energy varies as the contact state changes from the Cassie state (in which air is trapped at the drop bottom) to the Wenzel state (in which liquid fills the texture at the drop bottom) assuming that the latter state nucleates from the center of the drop bottom. When the textured substrate is hydrophilic enough to allow spontaneous penetration of liquid film of the texture thickness, the present theory asserts that the drop develops into an experimentally observed state in which a drop looks like an egg fried without flipped over (sunny-side up) with a well-defined radius of "the egg yolk." Otherwise, the final contact state of the drop becomes like a Wenzel state, but with the contact circle smaller than the original Wenzel state due to the CAH. We provide simple analytical estimations for the yolk radius of the "sunny-side-up" state and for the final radius of the contact circle of the pseudo-Wenzel state.     

Enabling New Approaches: Recent Advances in Processing Aliphatic Polycarbonate-Based Materials

Aliphatic polycarbonates (aPCs) have become increasingly popular as functional materials due to their biocompatibility and capacity for on-demand degradation. Advances in polymerization techniques and the introduction of new functional monomers have expanded the library of aPCs available, offering a diverse range of chemical compositions and structures. To accommodate the emerging requirements of new applications in biomedical and energy-related fields, various manufacturing techniques have been adopted for processing aPC-based materials. However, a summary of these techniques has yet to be conducted. The aim of this paper is to enrich the toolbox available to researchers, enabling them to select the most suitable technique for their materials. In this paper, a concise review of the recent progress in processing techniques, including controlled self-assembly, electrospinning, additive manufacturing, and other techniques, is presented. We also highlight the specific challenges and opportunities for the sustainable growth of this research area and the successful integration of aPCs in industrial applications.