浸没式ArF光刻最新进展

简单概述了浸没式ArF的发展历史、特点和面临的科学技术问题,在跟踪报道国内外最新研究进展的同时,介绍前沿光刻技术的研发特点和研究手段,强调协同设计研究的重要地位,并揭示浸没式ArF光刻不是干式ArF光刻的简单移置和延续。     

Three‐Dimensional SiCN Ceramic Microstructures via Nano‐Stereolithography of Inorganic Polymer Photoresists

We report a newly synthesized inorganic polymer photoresist with a high ceramic yield by the functionalization of polyvinylsilazane (KiON VL20) with 2‐isocyanatoethyl methacrylate via linkage or insertion reaction routes. The chemistry of the synthesis and the pyrolytic conversion as well as the mechanical evaluation were investigated by using various analytical instruments. We show for the first time that this photosensitive resin is a novel precursor for the fabrication of complex 3D SiCN ceramic microstructures with a 210 nm resolution via a two‐photon absorbed crosslinking process and subsequent pyrolysis at 600 °C under a nitrogen atmosphere. Moreover, the dimensional deformation during pyrolysis was significantly reduced by adding silica nanoparticles as a filler. In particular, the ceramic microstructures containing 40 wt % silica nanoparticles exhibited a relatively isotropic shrinkage owing to its sliding free from the substrate during pyrolysis.     

四激光束干涉光刻制造纳米级孔阵的理论分析

为提供一个在大范围内曝光出深亚微米甚至纳米级周期性密集图形的廉价的方法,研究了四激光束干涉光刻的原理,分析了干涉曝光的结果,并进行了计算机模拟.用现有的光源,如442 nm、365 nm、248 nm、193 nm激光,曝光得到的图形的临界尺寸容易做到180～70 nm.具有实际上无限制的焦深和容易实现的大视场.适合硅基CCDs、平场显示器的场发射电极阵列等光电子器件中大范围内超亚微米级的周期性孔阵或点阵结构图形的制作.     

高温超导平面电路光刻工艺

在研究了传统光刻工艺的基础上 ,针对高温超导平面电路自身对工艺的要求 ,结合高温超导薄膜的特点 ,提出了几点工艺方法上的改进 ,解决了传统光刻工艺中存在的几个问题。实验结果表明 ,这种新的工艺方法不仅增加了高温超导平面电路制备工艺的稳定性 ,而且提高了样品的可重复性。     

Even aberration measurement of lithographic projection system based on optimized phase-shifting marks

In the present paper, we propose a novel method for measuring the even aberrations of lithographic projection optics by use of optimized phase-shifting marks on the test mask. The line/space ratio of the phase-shifting marks is optimized to obtain the maximum sensitivities of Zernike coefficients corresponding to even aberrations. Spherical aberration and astigmatism can be calculated from the focus shifts of phase-shifting gratings oriented at 0°, 45°, 90° and 135° at multiple illumination settings. The PROLITH simulation results show that, the measurement accuracy of spherical aberration and astigmatism obviously increase, after the optimization of the measurement mark.     

三维互连中光刻及晶圆级键合技术的挑战、趋势和解决方案

基于它的技术优势三维集成技术正在不断地被应用到新的产品中,也包括被应用到消费电子产品里。N时也对许多工艺提出了新的要求,其中也包括光刻和晶圆级键合。三维集成技术还是需要光刻工艺来完成图形的转换．为此．讨论了三维集成工艺对工艺设备和技术提出的挑战。介绍了SUSS公司与三维技术相关的产品。着重讨论与三维集成工艺相关的光刻和键合工艺。描述了三维集成对它们提出的挑战以及目前已有的解决方案和前景。并介绍一款新的具有0．25汕m对准精度的接近接触式光刻机。     

Magnetic disturbance compensation for a reticle stage in a lithographic tool

The wafer stage and reticle stage in a lithographic tool, used to manufacture integrated circuits, operate at nanometer accuracy during a scanning motion. Magnetic interaction with the environment causes disturbance forces that result in a 5 nm moving-average filtered scanning error of the reticle stage.Stage motor magnet interaction with ferromagnetic material in the vicinity causes a position-dependent disturbance force, and eddy currents in electrically conductive metals cause a position-dependent damping force which is proportional with velocity.The total disturbance force can be estimated from control-loop signals, and by moving the stage in both directions both disturbance types can be distinguished from each other and recorded in compensation tables. Applying these tables as a feedforward reduces the scanning position error from 5 nm to 1.8 nm in a production reticle stage system.     

Simple Patterning via Adhesion between a Buffered‐Oxide Etchant‐Treated PDMS Stamp and a SiO2 Substrate

A very simple polydimethylsiloxane (PDMS) pattern‐transfer method is devised, called buffered‐oxide etchant (BOE) printing. The mechanism of pattern transfer is investigated, by considering the strong adhesion between the BOE‐treated PDMS and the SiO₂ substrate. PDMS patterns from a few micrometers to sub‐micrometer size are transferred to the SiO₂ substrate by just pressing a stamp that has been immersed in BOE solution for a few minutes. The patterned PDMS layers work as perfect physical and chemical passivation layers in the fabrication of metal electrodes and V₂O₅ nanowire channels, respectively. Interestingly, a second stamping of the BOE‐treated PDMS on the SiO₂ substrate pre‐patterned with metal as well as PDMS results in a selective transfer of the PDMS patterns only to the bare SiO₂. In this way, the fabrication of a device structure consisting of two Au electrodes and V₂O₅ nanowire network channels is possible; non‐ohmic semiconducting I–V characteristics, which can be modeled by serially connected percolation, are observed.     

光刻技术的发展动态

介绍了目前几种主流光刻技术（光学光刻，电子束光刻，ｘ射线光刻和离子束光刻）的发展动态     

负性化学放大胶的光刻模型及模拟

在Ferguson的负性化学放大胶（CAR）后烘反应动力学模型基础上，增加了后烘过程中光致酸扩散模型，通过后烘模型的简化，得到了简化的后烘反应扩散动力学模型。将模拟图形与Ferguson的实验图形进行了比较，结果显示，简化的后烘反应扩散动力学模型比单纯的后烘反应动力学模型更准确，且程序运行占用的电脑资源更少。另外，通过不同曝光时间下的显影过程模拟，清晰地反映了光刻胶显影的过程，其结果与实际相符，对实际光刻工艺有较好的参考意义。