应用于光刻领域中的固态紫外激光源的制作

以半导体侧泵钇铝石榴石激光器为泵浦源,采用腔内泵浦两块三硼酸铯晶体,产生满足高功率与高光束质量要求的三倍频355 nm紫外激光.通过使用法拉第旋转器谐振腔优化设计与热效应补偿提高输出光的光束质量,并且使用体光栅作为输出镜,在实现线宽窄化同时保持准相位匹配的高效性能.该光刻用紫外激光源成功地替代准分子激光器,使用在一套大面积亚纳米级投影式光刻系统上,工作时紫外光输出功率为4.37W,光束质量因子为2.27.     

Even aberration measurement of lithographic projection system based on optimized phase-shifting marks

In the present paper, we propose a novel method for measuring the even aberrations of lithographic projection optics by use of optimized phase-shifting marks on the test mask. The line/space ratio of the phase-shifting marks is optimized to obtain the maximum sensitivities of Zernike coefficients corresponding to even aberrations. Spherical aberration and astigmatism can be calculated from the focus shifts of phase-shifting gratings oriented at 0°, 45°, 90° and 135° at multiple illumination settings. The PROLITH simulation results show that, the measurement accuracy of spherical aberration and astigmatism obviously increase, after the optimization of the measurement mark.     

三维互连中光刻及晶圆级键合技术的挑战、趋势和解决方案

基于它的技术优势三维集成技术正在不断地被应用到新的产品中,也包括被应用到消费电子产品里。N时也对许多工艺提出了新的要求,其中也包括光刻和晶圆级键合。三维集成技术还是需要光刻工艺来完成图形的转换．为此．讨论了三维集成工艺对工艺设备和技术提出的挑战。介绍了SUSS公司与三维技术相关的产品。着重讨论与三维集成工艺相关的光刻和键合工艺。描述了三维集成对它们提出的挑战以及目前已有的解决方案和前景。并介绍一款新的具有0．25汕m对准精度的接近接触式光刻机。     

负性化学放大胶的光刻模型及模拟

在Ferguson的负性化学放大胶（CAR）后烘反应动力学模型基础上，增加了后烘过程中光致酸扩散模型，通过后烘模型的简化，得到了简化的后烘反应扩散动力学模型。将模拟图形与Ferguson的实验图形进行了比较，结果显示，简化的后烘反应扩散动力学模型比单纯的后烘反应动力学模型更准确，且程序运行占用的电脑资源更少。另外，通过不同曝光时间下的显影过程模拟，清晰地反映了光刻胶显影的过程，其结果与实际相符，对实际光刻工艺有较好的参考意义。     

X射线光刻现状

本文介绍x射线光刻的x射线源、光刻机、掩模和抗蚀剂的现状。     

Lithography with silicon ions

Some applications of focussed ion beams are discussed with special emphasis on the lithography aspects. Experimental data on the ranges of H⁺, Be⁺ and Si⁺⁺ in polymethylmethacrylate (PMMA) are presented. The sensitivity of PMMA to Si⁺⁺ ions is measured to be 0.35 μC/cm². It is shown by replication through a transmission mask that Si⁺⁺ ions with low to moderate incident energies, such as found in focussed ion beam systems, can be used for submicrometer lithography in single and multi-layer resist systems. This paper was presented at the 25th Electronic Materials Conference, Burlington, Vermont, June 1983     

Selective Immobilization of Protein Clusters on Polymeric Nanocraters

A method for fabricating chemically nanopatterned surfaces based on a combination of colloidal lithography and plasma‐ enhanced chemical vapor deposition (PECVD) is presented. This method can be applied for the creation of different nanopatterns, and it is in principle not limited in patterning resolution. Nanocraters of poly(acrylic acid) (carboxylic moieties) surrounded by a matrix of poly(ethylene glycol) are fabricated. Chemical force microscopy demonstrates that the process is able to produce the expected surface chemical contrast. Finally, the carboxylic groups of the craters are activated in order to induce the covalent binding of fluorescent‐labeled proteins. Fluorescence investigation using scanning confocal microscopy shows that the proteins are preferentially attached inside the functional craters.     

Three‐Dimensional SiCN Ceramic Microstructures via Nano‐Stereolithography of Inorganic Polymer Photoresists

We report a newly synthesized inorganic polymer photoresist with a high ceramic yield by the functionalization of polyvinylsilazane (KiON VL20) with 2‐isocyanatoethyl methacrylate via linkage or insertion reaction routes. The chemistry of the synthesis and the pyrolytic conversion as well as the mechanical evaluation were investigated by using various analytical instruments. We show for the first time that this photosensitive resin is a novel precursor for the fabrication of complex 3D SiCN ceramic microstructures with a 210 nm resolution via a two‐photon absorbed crosslinking process and subsequent pyrolysis at 600 °C under a nitrogen atmosphere. Moreover, the dimensional deformation during pyrolysis was significantly reduced by adding silica nanoparticles as a filler. In particular, the ceramic microstructures containing 40 wt % silica nanoparticles exhibited a relatively isotropic shrinkage owing to its sliding free from the substrate during pyrolysis.     

Organic doped diode rectifier based on parylene-electronic beam lithogrpahy process for radio frequency applications

We have adapted a “peel-off” process to structure stacked organic semiconductors (conducting polymers or small molecules) and metal layers for diode microfabrication. The fabricated devices are organic diode rectifier in a coplanar waveguide structure. Unlike conventional lithographic process, this technique does not lead to destroy organic active layers since it does not involve harsh developer or any non-orthogonal solvent that alter the functionality of subsequentially deposited materials.This process also involves recently reported materials, as a p-dopant of an organometallic electron-acceptor Copper (II) trifluoromethanesulfonate, that play the role of hole injection layer in order to enhance the performances of the diode.Comparatively to self-assembled monolayers based optimized structures, the fabricated diodes show higher reproducibility and stability. High rectification ratio for realized pentacene and poly (3-hexylthiophene) diodes up to 10⁶ has been achieved. Their high frequency response has been evaluated by performing theoretical simulations. The results predict operating frequencies of 200 MHz and 50 MHz for pentacene and P3HT diode rectifiers respectively, with an input oscillating voltage of 2 V peak-to-peak, promising for RFID device applications or for GSM band energy harvesting in low-cost IoT objects.     

Electric‐Field‐Induced Pattern Morphologies in Thin Liquid Films

Liquid‐polymer films sandwiched between two electrodes develop a surface instability caused by the electric field, giving rise to polymer structures that span the two plates. This study investigates the development of the resulting polymer morphologies as a function of time. The initial phase of the structure formation process is a sinusoidal surface undulation, irrespective of the sample parameters. The later stages of pattern formation depend on the relative amount of polymer in the capacitor gap (filling ratio). For high enough filling ratios, the final morphology of the pattern is determined by the partial coalescence of the initial pattern. The introduction of lateral‐field heterogeneities influences the initial pattern formation, with columns nucleated at locations of highest electric field (isolated points or edges). The subsequently formed secondary columns have higher degree of lateral symmetry compared to the pattern formed in a homogeneous field. The nucleation of individual columns or plugs also dominates the pattern formation in the presence of an electrode consisting of an array of lines. The results of this study therefore allow us to draw the conclusion that the accurate replication of structured electrodes typically proceeds by the initial nucleation of individual columns, followed by a coalescence process that yields the polymer replica.