Nonchemically amplified resists possessing cholate moiety for micropatterning of biomolecules

Two novel monomers, containing diazoketo functional groups, cholic acid 3-diazo-3-ethoxycarbonyl-2-oxo-propyl ester methacrylate (CDEOPE-MA) and 2-diazo-6-hydroxy-3-oxo-hexanoic acid ethyl ester methacrylate (DHOHEE-MA), were designed and synthesized for biomolecular patterning applications. The polymers were synthesized by radical copolymerization of CDEOPE-MA, DHOHEE-MA, and γ-butyrolacton-2-yl methacrylate. The patternability of the synthesized photoresist polymers were characterized by their lithographic evaluation. Introduction of cholate-monomer (CDEOPE-MA) seems to enhance the film formability as well as film stability in aqueous medium. DNA oligonucleotide patterning study was performed to demonstrate the applicability of this system for biomolecular patterning.     

Recent advances in voltammetric,amperometric and ion-selective (bio)sensors fabricated by microengineering manufacturing approaches

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A novel method of partial coherence measuring for the illumination system and its defocus performance analysis

Partial coherence (generally represented by σ) is one of the important parameters of lithographic tool to assess the performance of pupil fill. In this paper, a novel method of partial coherence measurement for the illumination system is proposed. Statistical results of measured σ by the proposed method are analyzed. The dependence of partial coherence on the defocus, which is the distance from the measuring position to the best image plane, is also investigated. The simulation results prove the effectiveness of this method, and with the defocus increasing, the measured partial coherence decreases. Generally, if three times of the standard deviation is required to be 1 × 10⁻³, the amount of defocus should be less than 96 μm.     

65nm技术节点套刻控制的经济价值

国际半导体技术发展路线工作组确定了把套刻控制作为65nm及其以下的技术节点未知解决方法的技术障碍。最严重的问题是总的测量方法不确定、CMP工艺的坚固性以及器件的相互关系。系统的根源引起的图形位置误差(PPE)分析在摩托罗拉公司的DanNoble中心已得到确定,即目前传统的框中框式套刻标记在所有的三种类型引起了缺陷。一种先进的利用成像标记的建议是基于栅格型且能被分割成类似于器件图形的特征图形。在采用193nm光刻设备进行多浅沟道隔离图形套刻的情况下,这种标记显示出将总的测量方法不确定因素减少了40%。     

光学参数配置对ArF光刻性能影响研究

针对分辨力100nm的ArF光刻机,在环形照明和四极照明下,对4种曝光图形结构光刻性能进行了仿真研究。仿真结果表明,如果光刻物镜在加工装调后的光波像差为6nm,杂散光为2%,工件台运动标准偏差为8nm,曝光量控制在10%,CD≤±10%CD,利用四级照明,可以在较大的焦深范围内(DOF≥0.4～0.5μm)实现满足器件要求的100nm密集线条、半密集线条的光刻成像。当曝光剂量更精确控制到7%,可以在较大的焦深范围内(DOF≥0.4～0.5μm)实现满足器件要求的100nm孤立线条的光刻成像。     

关于三维互连的光刻挑战和解决方案

为了在一个封装内集成更高层次的功能,设计人员采用了创造性的策略,即将多芯片规格、类型乃至材料合并成单个组件。连接不同的芯片类型例如光学、机械和转换电路甚至追寻到诸如图像传感器、生物或者化学传感器等制造高度组合的组件。 在产生新一代先进器件的尝试中,设计人员越来越多地转向了通过垂直厚度来增加密度和将空间、质量和功耗减到最小。芯片堆叠,硅通孔技术（TSV’s）及其他纵向集成技术导致了一种在Z向尺寸的增加,从而对于工艺工程师产生了一系列新的挑战。这些挑战要求有涂胶、形成图案和刻蚀结构,它们在高度上也许已经达几十乃至上百微米。探索一些与三维互连技术有关的光刻挑战,其中有采用垂直高度所必需的高度保形表面形貌状态涂胶技术的新方法．新的成像技术对于对准置于各种各样掩蔽层下面的图形,而新的曝光技术直到实现上述高度结构的高保真图形为止。     

Dual‐Tone Patterned Mesoporous Silicate Films Templated From Chemically Amplified Block Copolymers

Directly patterned mesoporous silicate films are prepared using positive‐ and negative‐tone strategies by performing phase selective silica condensation within lithographically exposed poly(styrene‐b‐tert‐butyl acrylate) (PS‐b‐PtbA) templates containing photoacid generators. The use of supercritical fluid as a process medium enables rapid diffusion of the silicate precursor within the prepatterned block copolymer template film without disrupting its morphology. Template exposure through the mask triggers area selective generation of acid, which in turn both deprotects the poly(tert‐butyl acrylate) block to yield a poly(acrylic acid) block and provides a catalyst for silica precursor condensation yielding pattern formation at the device level. Because the acid generated in the UV exposed field preferentially segregates into hydrophilic poly(acrylic acid) domains of the phase segregated, deprotected block copolymer, precursor condensation is simultaneously controlled at nanoscopic length scales via templating by the underlying block copolymer morphology. The ability of PS‐b‐PtbA to undergo chemical transformation in two stages, deprotection followed by crosslinking, enables precise replications of the photomask in positive and negative tones. Detemplating via calcination yields patterned mesoporous silicate films without etching. Template formulations are optimized using infrared spectroscopic studies and the silicate films are characterized using electron microscopy and scanning force microscopy.     

半导体设备市场的新动向

由于全球半导体市场温和增长和全球半导体资本支出市场从不缓至下滑,导致全球半导体设备市场增长放缓,2007年增长3%～4%,2008年可能出现下滑,中国台湾地区已成为全球第二大半导体设备、材料市场。光刻设备市场看好,2006～2012年复合年增长率将达到13%。450mm晶圆是半导体产业发展的必然趋势,向450mm晶圆过渡的最佳时间是2013年前后。     

Patterning a nanowell sensor biochip for specific and rapid detection of bacteria

This paper presents the fabrication process of a SEPTIC (SEnsing of Phage-Triggered Ion Cascades) chip, consisting of two Ti contact pads and a 150 nm wide Ti nanowell device on LiNbO₃ substrate. The patterning was fulfilled by combining electron beam lithography, contact photolithography and reactive ion etching. When connected to an external preamplifier and spectrum analyzer, the nanowell can probe nano-scale electric field fluctuations. The use of this chip as nano-scale electric field probe was demonstrated by detecting the transitory ion efflux from bacteria being infected by phage. Our experiment showed that the electric field noise follows 1/f² power spectrum when the bacteria are sensitive to the phage, whereas 1/f noise corresponds to bacteria resistant to the phage. The use of fluctuation-enhanced sensing can provide sensitivity orders of magnitude higher than conventional sensing that detects changes only in the mean value of electrical signals.     

Error analysis of digital virtual mask fabrication technique

The digital virtual mask technique based on digital micro-mirror device (DMD) is applied in the field of micro-engineering such as the machining of micro-optical elements. On the premise of universality, the error of digital virtual mask technique is theoretically deduced, combined with the functional diagram used in the experiment. Based on the expanding application of Rayleigh's criterion, the reference of calculating the error of the lithography mask technique is given. And the method of improving the technique is also discussed.