氧化铁浆液脱硫的实验研究与理论分析

本文实验研究了氧化铁浆液在酸性环境下脱除烟气中的二氧化硫气体。实验在一自制的脱硫塔中进行。通过燃烧液化石油气来产生烟气,将氧化铁的超细粉加入水中作为脱硫介质。实验中研究了二氧化硫初始浓度、水气比对脱硫效率的影响。从实验结果可以看出,脱硫率随着水气比的增加而增大;随二氧化硫的初始浓度的增加,其脱硫率呈降低趋势。在文中同时分析了氧化铁浆液的脱硫机理和此方法脱硫的优点以及目前存在的问题。     

Comparison of the non-uniform chiral and 2SC phases at finite temperatures and densities

We study the phase diagram of the strongly interacting matter at finite temperatures and densities including 2SC, uniform chiral and non-uniform chiral phases within the Nambu–Jona-Lasinio model in the mean field approximation.     

K0.9Li0.1（Ta0.5Nb0.5）O3晶体压电应变系数的测量

用准静态ｄ＿（３３）测量仪和干涉法相结合。测量了Ｋ＿（０．９）Ｌｉ＿（０．１）（Ｔａ＿（０．５）Ｎｂ＿（０．５）Ｎｂ＿（０．５））Ｏ＿３晶体的压电应变系数。结果为：ｄ＿（３３）＝８６．０，ｄ＿（３３）＝一２９．５，ｄ＿（１５）＝１１２．９×１０￣（－１２）Ｃ／Ｎ．     

超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯复合材料的输运性质

采用热压法获得了具有不同混合比例的超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯导电复合材料,并利用x射线衍射、扫描电子显微镜和标准四引线方法对复合材料的结构和低温电输运性质进行测量.实验结果显示,超导氧化物La1.85Sr0.15CuO4颗粒随机分布在聚合物本体中,相互间没有连接构成网络结构.在正常态下,复合材料的电阻-温度变化曲线给出类半导体行为.但对应于超导氧化物La1.85Sr0.15CuO4的超导转变温度Tc处,复合材料的电阻-温度变化曲线出现了极小值.室温下电阻率ρ随外加电场强度E的变化曲线测量结果表明,ρ-E曲线为一线形关系,随着电场强度E增加,电阻率ρ下降.文中对可能存在的导电机制进行分析,结果表明隧道贯穿模型可以很好地解释复合材料的导电机制.另外,外加电场强度E对复合材料的电输运特性有明显的影响.     

Physics in Melbourne

I survey highlights of the practice of physics and allied sciences in Melbourne,Australia, from the 1850s, soon after Europeans first settled in the area, to the present. I note recognizable sites of past and current physical-science activity that may be visited, as well as exhibits of historic items of physics apparatus. I trace the role of physics, in the course of a century and a half, in the evolution of a pioneering settlement into a large city embedded in a modern industrial economy.     

热分解法制备钛酸铅镧薄膜及其电性能研究

本文研究了用金属有机物热发解法制备ＰＬＴ８薄膜的工艺过程和基片对薄膜结构的影响，并且给出了铁电性能的测量结果。     

A decrease in the density of trapping centers in silicon oxide as a result of radiation-thermal treatment

The results of processing the experimental drain-gate characteristics of test MOS transistors after irradiation with fast electrons and subsequent heat treatment are reported. It is shown that the concentration of trapping centers in the oxide is lowered as a result of radiation-thermal treatment.     

Atomically precise self-assembly of one-dimensional structures on silicon

This work has three main themes: (1) fabricate atomically precise nanostructures at surfaces, particularly nanowires consisting of atom chains; (2) explore the behavior of one-dimensional electrons in atomic chains; (3) find the fundamental limits of data storage using an atomic scale memory. Semiconductor surfaces lend themselves towards self-assembly, because the broken covalent bonds create elaborate reconstruction patterns to minimize the surface energy. An example is the large 7 × 7 unit cell on Si(1 1 1), which can be used as building block. On semiconductors, the surface electrons completely de-couple from the substrate, as long as their energy lies in the band gap. Angle-resolved photoemission reveals surprising features, such as a fractional band filling and a spin-splitting at a non-magnetic surface. An interesting by-product is a memory structure with self-assembled tracks that are five atom rows wide and store a bit by the presence or absence of a single silicon atom. This toy memory is used to test the fundamental limits of data storage and to see how storage on silicon compares to storage in DNA.